D86S
Abstract: 68b1 6.2B2 56B2 5.6B2 D158S 54B2 62b1 D33SH 62B2
Text: A B C D REVISIONS ENGINEERING NOTES 1. Device is dead bug laid out 2. Pin 1 is pointing south 3. A 0.01uf chip capacitor in parallel 4. Use an odd channel, also reserve an 5. Use an odd and even chan. Tie them 6. DUT Analog star GND pin 51, 54 7. Supertex Inc.
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Original
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TN0604N3
BT8952
RCV15
RCVCLK58
GND51
VAA50
XFS48
AGAIN1462
D68SH
D36SH
D86S
68b1
6.2B2
56B2
5.6B2
D158S
54B2
62b1
D33SH
62B2
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PDF
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DDR2 x32
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.2 September 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QC-B
512Mbit
DDR2 x32
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PDF
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Untitled
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.4 March 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QC-B
512Mbit
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PDF
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K4J52324Qc
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K4J52324QC
512Mbit
K4J52324Qc
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PDF
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K4D26323RA-GC33
Abstract: GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC36
Text: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 2.0 January 2003 Samsung Electronics reserves the right to change products or specification without notice.
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Original
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K4D26323RA-GC
128Mbit
32Bit
144-Ball
K4D26323RA-GC2A
20tCK
15tCK
22tCK
K4D26323RA-GC33
GC33
K4D26323AA-GL
K4D26323RA-GC
K4D26323RA-GC36
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PDF
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DDR RAM 512M
Abstract: K4J52324QC-BC14 Hynix Cross Reference hynix memory h9 ddr2 K4J52324Q K4J52324QC-BJ12 mark t5n gddr3 K4J52324QC-BC20 K4J52324QC-A
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.0 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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Original
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K4J52324QC-B
512Mbit
DDR RAM 512M
K4J52324QC-BC14
Hynix Cross Reference
hynix memory h9 ddr2
K4J52324Q
K4J52324QC-BJ12
mark t5n
gddr3
K4J52324QC-BC20
K4J52324QC-A
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PDF
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Untitled
Abstract: No abstract text available
Text: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.9 August 2002 Samsung Electronics reserves the right to change products or specification without notice.
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Original
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K4D26323RA-GC
128Mbit
32Bit
144-Ball
K4D26323RA-GC2A
20tCK
15tCK
22tCK
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PDF
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Untitled
Abstract: No abstract text available
Text: 128M GDDR SDRAM K4D26323QG-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.2 March 2005 Samsung Electronics reserves the right to change products or specification without notice.
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Original
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K4D26323QG-GC
128Mbit
32Bit
144-Ball
K4D26323QG-GC22
-GC20
-GC22/25
55tCK
45tCK
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PDF
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K4D26323QG-GC22
Abstract: K4D26323QG-GC2A K4D26323QGGC2
Text: 128M GDDR SDRAM K4D26323QG-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.0 June 2004 Samsung Electronics reserves the right to change products or specification without notice.
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Original
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K4D26323QG-GC
128Mbit
32Bit
144-Ball
-GC22/25
55tCK
45tCK
-GC20
K4D26323QG-GC22
K4D26323QG-GC2A
K4D26323QGGC2
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PDF
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K4D26323QG-GC22
Abstract: No abstract text available
Text: 128M GDDR SDRAM K4D26323QG-GC 128Mbit GDDR SDRAM Revision 1.2 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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Original
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K4D26323QG-GC
128Mbit
144-Ball
K4D26323QG-GC22
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PDF
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Untitled
Abstract: No abstract text available
Text: 128M GDDR SDRAM K4D26323QG-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.1 November 2004 Samsung Electronics reserves the right to change products or specification without notice.
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Original
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K4D26323QG-GC
128Mbit
32Bit
144-Ball
-GC20
-GC22/25
55tCK
45tCK
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PDF
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K4J52324QC
Abstract: K4J52324QC-bj11
Text: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K4J52324QC
512Mbit
r7/08/13
450KB
K4J52324QC-AC200
K4J52324QC-BC140
K4J52324QC-BC200
K4J52324QC-BJ110
K4J52324QC-BJ120
K4J52324QC-BJ1A0
K4J52324QC
K4J52324QC-bj11
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