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K4D26323QGGC2 Price and Stock

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Samsung Semiconductor K4D26323QG-GC2A
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Bristol Electronics	K4D26323QG-GC2A		1,659			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K4D26323QG-GC25
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Bristol Electronics	K4D26323QG-GC25		388			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K4D26323QGGC2 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4D26323QG-GC20		Samsung Electronics	DRAM Chip, 128MBit GDDR SDRAM 1M x 32-Bit x 4 Banks Graphic Double Data Rate with Bi-directional Data Strobe and DLL Synchronous DRAM		Original	PDF
K4D26323QG-GC22		Samsung Electronics	DRAM Chip, 128MBit GDDR SDRAM 1M x 32-Bit x 4 Banks Graphic Double Data Rate with Bi-directional Data Strobe and DLL Synchronous DRAM		Original	PDF
K4D26323QG-GC25		Samsung Electronics	DRAM Chip, 128MBit GDDR SDRAM 1M x 32-Bit x 4 Banks Graphic Double Data Rate with Bi-directional Data Strobe and DLL Synchronous DRAM		Original	PDF
K4D26323QG-GC2A		Samsung Electronics	DRAM Chip, 128MBit GDDR SDRAM 1M x 32-Bit x 4 Banks Graphic Double Data Rate with Bi-directional Data Strobe and DLL Synchronous DRAM		Original	PDF

K4D26323QGGC2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FBM-L11-201209-221LMAT Abstract: k 2761 FBM-L11-322513-151LMAT SP020011410 ls-2761 FBM-L11-201209-221-LMAT C65 004 C65 - 004 p 01 k 2761 BGA-708 Text: Material List by Single-Item/Multi-Level - All -Date : 05/17/2005 Time : 16:41:06 Drawing No: 455919 Plant: CN30 Revision: C Report by UID: 9141332	Original	BO001 BO002 BO003 BO004 455919BO001 LS-2761 EFL50 455919BO002 FBM-L11-201209-221LMAT k 2761 FBM-L11-322513-151LMAT SP020011410 FBM-L11-201209-221-LMAT C65 004 C65 - 004 p 01 k 2761 BGA-708	PDF
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B	PDF
RTL8110 Abstract: max8724e 915GM SLD9630TT MTW355 quanta 1715L finger print sensor MAX1907A T1VGA Text: 5 4 3 2 1 01 VC2 BLOCK DIAGRAM DOTHAN+ALVISO 915GM +ICH_6 D D Clock Generator IDT CV111 Dothan / Yonah 478 Pins CPU Thermal Sensor (Micro-FCPGA) GMT972 FAN 1 PG 14 PG 4 PG 4 PG 4,5 FSB 400/533MHZ S_VEDIO DDR INTERFACE, 400/533MHz PG 22 ALVISO C LVDS LCD Panel	Original	915GM) 400/533MHZ GMT972 CV111 400/533MHz 33MHZ, TI1510 RTL8110S/8100CL 330R/0603 47P/50V/0603/NPO RTL8110 max8724e 915GM SLD9630TT MTW355 quanta 1715L finger print sensor MAX1907A T1VGA	PDF
Untitled Abstract: No abstract text available Text: 128M GDDR SDRAM K4D26323QG-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.2 March 2005 Samsung Electronics reserves the right to change products or specification without notice.	Original	K4D26323QG-GC 128Mbit 32Bit 144-Ball K4D26323QG-GC22 -GC20 -GC22/25 55tCK 45tCK	PDF
BMD101 Abstract: lm358-2.5 CS00003J951 quanta foxconn CH52202MA91 CS168 a25 cm1 100u 18p B1317 quanta computer Text: 5 4 3 2 1 K2W Block Diagram 1 Dothan+Alviso 915PM +ICH6-M D CPU Thermal Sensor Intel Dothan 27W VRAM 64MB/128MB 478 PIN micro FC-BGA PCIE x 16 2.5Gb/s VGA Chip ATI M24/M26 R,G,B CRT Port S-Video C Channel A MCH DDR2 INTERFACE, 400/533MHz Channel B Alviso 915PM	Original	915PM) CV111 GMT792 64MB/128MB 400/533MHz M24/M26 915PM 33MHZ, TI7411 BMD101 lm358-2.5 CS00003J951 quanta foxconn CH52202MA91 CS168 a25 cm1 100u 18p B1317 quanta computer	PDF
K4D26323QG-GC22 Abstract: K4D26323QG-GC2A K4D26323QGGC2 Text: 128M GDDR SDRAM K4D26323QG-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.0 June 2004 Samsung Electronics reserves the right to change products or specification without notice.	Original	K4D26323QG-GC 128Mbit 32Bit 144-Ball -GC22/25 55tCK 45tCK -GC20 K4D26323QG-GC22 K4D26323QG-GC2A K4D26323QGGC2	PDF
K4D26323QG-GC22 Abstract: No abstract text available Text: 128M GDDR SDRAM K4D26323QG-GC 128Mbit GDDR SDRAM Revision 1.2 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K4D26323QG-GC 128Mbit 144-Ball K4D26323QG-GC22	PDF
Untitled Abstract: No abstract text available Text: 128M GDDR SDRAM K4D26323QG-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.1 November 2004 Samsung Electronics reserves the right to change products or specification without notice.	Original	K4D26323QG-GC 128Mbit 32Bit 144-Ball -GC20 -GC22/25 55tCK 45tCK	PDF