SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
SA6954
S29WS064N
S29WS128N
S29WS256N
WS128N
FFC00
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SA-275
Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document
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Am29PDL129H
S29PL129J
Am29PDL129J
SA-275
2aa 555
SA1127
SA1-108
SA1115
SA298
SA283
SA1117
PDL128G
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4kw marking
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V
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DS05-50308-2E
MB84VD22280FA-70/MB84VD22290FA-70
MB84VD22280FE-70/MB84VD22290FE-70
59-ball
MB84VD22280FA/80FE/90FA/90FE
F0311
4kw marking
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FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
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DS05-20904-2E
MBM29DL32TF/BF-70
MBM29DL32TF/BF
MBM29DL32TF/BF
F0305
FPT-48P-M19
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71WS256NC0BAIAU
Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
71WS256NC0BAIAU
cosmoram synchronous
S71WS256NC0
S71WS256ND0
S71WS512ND0
TSD084
S71WS512NC0BFIAZ
SA002
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MBM29BS64LF
Abstract: MBM29BS64LF-18 MBM29BT64LF-18
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed
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DS05-20916-1E
MBM29BS/BT64LF-18/25
MBM29BS/BT64LF
60-ball
MBM29BS/
BT64LF-25
MBM29BT64LF-18
MBM29BS64LF-18
F0403
MBM29BS64LF
MBM29BS64LF-18
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BGA-101P-M01
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM
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DS05-50208-2E
MB84LD23381EJ-10
101-ball
BGA-101P-M01
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Untitled
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0305
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
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DS05-20892-1E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
MBM29PDD322TE/BE
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29DL32BF
Abstract: MBM29DL32
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF 70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
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MBM29DL32TF/BF
MBM29DL32TF/BF
29DL32BF
MBM29DL32
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Untitled
Abstract: No abstract text available
Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words
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M29DW640F
TSOP48
24Mbit
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JS28F00am29
Abstract: PC28F00BM29EWHA PC28F00AM29EWLA pc28f00am29ew JS28F00AM29EWxx JS28F00AM29EW pc28f00am29 JS28F00AM29EWHA JS28F512M29 RC28F256M29EWLA
Text: 256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx
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256Mb,
512Mb,
JS28F256M29EWxx,
PC28F256M29EWxx,
RC28F256M29EWxx
JS28F512M29EWxx,
PC28F512M29EWxx,
RC28F512M29EWxx
JS28F00AM29EWxx,
PC28F00AM29EWxx,
JS28F00am29
PC28F00BM29EWHA
PC28F00AM29EWLA
pc28f00am29ew
JS28F00AM29EWxx
JS28F00AM29EW
pc28f00am29
JS28F00AM29EWHA
JS28F512M29
RC28F256M29EWLA
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A039h
Abstract: 3A400
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.
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16/4M
MBM29XL12DF
128M-bit,
90-pin
96-ball
A039h
3A400
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4kw marking
Abstract: No abstract text available
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0307
4kw marking
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S29GL128S
Abstract: S29GL512S S29GL01GS GL512S S29GL256S GL256S s29gl128s10tfiyyx JESD68-01 GL01GS S29GL01GS11
Text: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O Data Sheet
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S29GL01GS
S29GL512S
S29GL256S
S29GL128S
S29GL128S
GL512S
GL256S
s29gl128s10tfiyyx
JESD68-01
GL01GS
S29GL01GS11
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101R
Abstract: 120R LV065MU S29GL064A
Text: Am29LV641MH/L Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV641M H/L and is the factory-recommended migration path. Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this
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Am29LV641MH/L
S29GL064A
Am29LV641M
101R
120R
LV065MU
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PL129N
Abstract: 29f400 pl127 S29PL-N S71PL512ND0 sample code write buffer spansion
Text: S71PL512ND0 MirrorBit Flash Family Two S29PL256N Devices 32 M x 16-Bit CMOS 3.0-Volt only Simultaneous Read/Write, Page-Mode Flash Memory Data Sheet PRELIMINARY Notice to Readers: This document indicates states the current technical specifications regarding the Spansion product(s) described herein. The
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S71PL512ND0
S29PL256N
16-Bit)
PL129N
29f400
pl127
S29PL-N
sample code write buffer spansion
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JESD97
Abstract: M29DW128F TSOP56 6C80
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29DW128F
TSOP56
32-Word
16Mbit
48Mbit
16Mbit
TBGA64
JESD97
M29DW128F
TSOP56
6C80
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S29WS256N
Abstract: S71WS512NE0BFWZZ
Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip
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S71WS512NE0BFWZZ
S71WS512
S29WS256N
54MHz
128Mb
96-ball
S71WS512NE0BFWZZ
S29WS256N
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20913-2E BURST MODE FLASH MEMORY CMOS 32M 2M x 16 BIT MBM29BS/BT32LF 18/25 • GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed
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DS05-20913-2E
MBM29BS/BT32LF
60-ball
MBM29BS/
BT32LF-25
MBM29BT32LF-18
MBM29BS32LF-18
F0401
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FPT-48P-M19
Abstract: MBM29PL65LM-90 Diode SA91
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20903-1E FLASH MEMORY CMOS 64 M 4M x 16 BIT MirrorFlashTM MBM29PL65LM-90/10 • DESCRIPTION MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase.
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DS05-20903-1E
MBM29PL65LM-90/10
MBM29PL65LM
48-pin
MBM29PL65for
F0312
FPT-48P-M19
MBM29PL65LM-90
Diode SA91
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M32V-XBX
8Mx32
120ns
13x22mm
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JS28F512M29
Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
PC28F00AM29EWHA
11-Apr-2011
JS28F512M29
js28f256m29
js28f256
JS28F512
pc28f00am29ew
JS28F00AM29EW
pc28f00am29
js28f00
PC28F00AM29EWHA
JS28F256M29EWL
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2216H
Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.
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TMP95CS54
16-Bit
TMP95CS54F
TMP95CS54
100-pin
900/H
TLCS-90/900
2216H
XZ MC11
LQFP100-P-1414-0
TMP95CS54F
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