Untitled
Abstract: No abstract text available
Text: 8 FO-55117-B 7 5 6 4 3 1 2 HONEYWELL PART NUMBER SL353HT F 2.90 A 3 GROUND - CATALOG LISTING 2.80 E 1.60 DATE CODE 1 VCC (+) 2 OUTPUT 0.20 C D B NOMINAL PACKAGE HALL ELEMENT 3X 0.50 0.30 0.10 DOCUMENT C 0075454 CHANGED BY PSP CHECK 21MAR11 KNR F NOTES: 1 - SOLDERING INSTRUCTIONS: EXPOSURE TO HIGH TEMPERATURES SHOULD BE
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FO-55117-B
SL353HT
21MAR11
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1355065
Abstract: 108-18621
Text: 4 1 MATED WITH: PASSEND ZU: LOC AI 967402 REVISIONS DIST - P PROJEKT NR.: DESCRIPTION BESCHREIBUNG D1 92-52069 DATE REVISED PER ECO-11-005150 E REVISED PER PCN E-13-005564 DWN APVD 21MAR11 RK HMR 18APR2013 RD JG SECTION C-C Schnitt C-C -COUPLING-RING IN PRE-LOCKED POSITION
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ECO-11-005150
21MAR11
18APR2013
E-13-005564
11NOV1994
15NOV1994
15APR2013
A200779
1355065
108-18621
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IRF820PBF
Abstract: No abstract text available
Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements
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IRF820,
SiHF820
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF820PBF
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TO-247 Package
Abstract: No abstract text available
Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements
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IRFP26N60L,
SiHFP26N60L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TO-247 Package
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Untitled
Abstract: No abstract text available
Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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IRFZ34,
SiHFZ34
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Power MOSFETs Application Notes irf520
Abstract: No abstract text available
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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IRF520,
SiHF520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Power MOSFETs Application Notes irf520
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flyback xfmr 3.5 mh
Abstract: No abstract text available
Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRF730A,
SiHF730A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
flyback xfmr 3.5 mh
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910410
Abstract: No abstract text available
Text: IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) () VGS = 10 V Qg (Max.) (nC) 17 • Fast Switching Qgs (nC) 3.4 • Ease of Paralleling Qgd (nC) 8.5 Configuration Available • Repetitive Avalanche Rated
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IRF710,
SiHF710
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
910410
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Untitled
Abstract: No abstract text available
Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFZ48,
SiHFZ48
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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irfbe30
Abstract: No abstract text available
Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements
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IRFBE30,
SiHFBE30
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irfbe30
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MH 1004 SMPS
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MH 1004 SMPS
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Untitled
Abstract: No abstract text available
Text: IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • Advanced Process Technology Available Ultra Low On-Resistance RoHS* Dynamic dV/dt Rating COMPLIANT 175 °C Operating Temperature Fast Switching Fully Avalanche Rated
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IRFZ48R,
SiHFZ48R
SiHFZ48
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve
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IRF840LC,
SiHF840LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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D 92 M - 02 DIODE
Abstract: No abstract text available
Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements
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IRF820,
SiHF820
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
D 92 M - 02 DIODE
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irf740lc
Abstract: No abstract text available
Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.55 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRF740LC,
SiHF740LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irf740lc
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IRF9Z34
Abstract: IRF9Z34PBF
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF9Z34
IRF9Z34PBF
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Untitled
Abstract: No abstract text available
Text: IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF740A,
SiHF740A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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power MOSFET IRF610
Abstract: No abstract text available
Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)
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IRF610,
SiHF610
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
power MOSFET IRF610
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MAR 740 MOSFET TRANSISTOR
Abstract: D 1402
Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFBC40A,
SiHFBC40A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
MAR 740 MOSFET TRANSISTOR
D 1402
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7402k4
Abstract: ECO-11-004587 7402K3 8909K5 8909K500
Text: 7 8 •mis BRÀWINÔ IS UNPUBLISHED COPYRIGHT RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. - AD DIST 00 REVISIONS LTR B1 DESCRIPTION DWN DATE APVD 21MAR11 RK HMR REVISED PER ECO -11-004587 D D 858 I I 781 B B 632 1,188 O MADE IN U.S.A. o 1,281 o Y ARAB
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ECO-11-004587
21MAR11
8909K5
01aug90
02aug90
8909K27
8910K202
8910K165
8909K4
7403K2
7402k4
ECO-11-004587
7402K3
8909K5
8909K500
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 3 2 MATED WITH: PASSEND ZU: RELEASED FOR PUBLICATION LOC 1355154 ALL RIGHTS RESERVED. By - 5 6 R E V IS IO N S DIST p AI LTR PROJECT NR,; A2 A 9 9 - 5 2 1 88 S H O W N WITHOUT LEVER / k ~\ DATE DWN 21MAR11 REVISED PER ECO-1 1-0051 50
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21MAR11
18P0S.
18pol
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7703401
Abstract: No abstract text available
Text: 8 THIS DRAWING IS UNPUBUSHED. Q RELEASED FOR PUBLICATION BY COPYRIGHT 19 - .19 ALL RIGHTS RESERVED. LOC DIST CM 00 REVISIONS LTF G1 1\ DESCRIPTION OWN DATE REVISED PER ECO-11-004917 RK 21MAR11 APVD HMR AMP LDGD AND CAVI TY NUMBER LOCATED □N EITH ER SURFACE.
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ECO-11-004917
21MAR11
30MAY00
30MAY00
23FEB95
AMP45354
7703401
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Untitled
Abstract: No abstract text available
Text: 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR 6 5 4 3 2 PUBLICATION LOC ES ALL RIGHTS RESERVED. COPYRIGHT - By - D IS T R E V I S I ON S 00 LTR A1 D E SC RIPTIO N REVISED PER DATE DWN RK HMR 21MAR11 E C O -1 1 -0 0 5 0 3 3 APVD MATERI AL: D SHELL L SENTANTS-
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21MAR11
8A888A8
88M888A88R8
88M8A8IB88
88MB88
260CT2004
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THS10
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 RELEASED FOR A LL C O P Y R IG H T 2 P U B L IC A T IO N R IG H TS LOC REVIS IO N S D IS T E RESERVED. By D E S C R IP T IO N LTR BA1 REVISED PER DWN DATE ECO -1 1 - 0 0 5 1 5 0 APVD RK HMR 21MAR11 D 2 B.OLKK
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19SEPT06
21MAR11
THS10
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