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    SIHFBE30 Search Results

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    SIHFBE30 Price and Stock

    Vishay Siliconix SIHFBE30S-GE3

    MOSFET N-CHANNEL 800V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHFBE30S-GE3 Cut Tape 960 1
    • 1 $1.77
    • 10 $1.467
    • 100 $1.1679
    • 1000 $0.98824
    • 10000 $0.98824
    		Buy Now
    SIHFBE30S-GE3 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.74125
    • 10000 $0.74125
    		Buy Now
    SIHFBE30S-GE3 Digi-Reel 1
    • 1 $1.77
    • 10 $1.467
    • 100 $1.1679
    • 1000 $0.98824
    • 10000 $0.98824
    		Buy Now
    New Advantage Corporation SIHFBE30S-GE3 3,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1
    • 10000 $1
    		Buy Now

    Vishay Siliconix SIHFBE30STRL-GE3

    MOSFET N-CHANNEL 800V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHFBE30STRL-GE3 Reel 800 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.74125
    • 10000 $0.74125
    		Buy Now
    SIHFBE30STRL-GE3 Cut Tape 1
    • 1 $1.77
    • 10 $1.77
    • 100 $1.77
    • 1000 $1.77
    • 10000 $1.77
    		Buy Now
    SIHFBE30STRL-GE3 Digi-Reel 1
    • 1 $1.77
    • 10 $1.77
    • 100 $1.77
    • 1000 $1.77
    • 10000 $1.77
    		Buy Now

    Vishay Intertechnologies SIHFBE30S-GE3

    Transistor Power MOSFET N-CH 800V 4.1A 3-Pin TO-263 (Alt: SIHFBE30S-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHFBE30S-GE3 12 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.017
    • 10000 $0.84206
    		Buy Now

    Vishay Intertechnologies SIHFBE30STRL-GE3

    Transistor Power MOSFET N-CH 800V 4.1A 3-Pin TO-263 (Alt: SIHFBE30STRL-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHFBE30STRL-GE3 12 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.017
    • 10000 $0.84206
    		Buy Now
    TTI SIHFBE30STRL-GE3 Reel 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SIHFBF30S-GE3

    MOSFETs MOSFET N-CHANNEL 900V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIHFBF30S-GE3 Reel 28,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.03
    • 10000 $1.03
    		Buy Now
    Find more SIHFBE30 price and stock on Findchips.com

    SIHFBE30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irfbe30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30

    irfbe30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30

    IRFBE30

    Abstract: SiHFBE30 SiHFBE30-E3 irfbe30pbf
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBE30 SiHFBE30-E3 irfbe30pbf

    s8143

    Abstract: IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S SiHFBE30S-E3
    Text: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration


    Original     		PDF IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-263) O-262) 18-Jul-08 s8143 IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling


    Original     		PDF IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling


    Original     		PDF IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling


    Original     		PDF IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 18-Jul-08

    AN609

    Abstract: IRFBE30L IRFBE30S SiHFBE30S
    Text: IRFBE30S_RC, SiHFBE30S_RC, IRFBE30L_RC, SiHFBE30L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFBE30S SiHFBE30S IRFBE30L SiHFBE30L AN609, 20-Apr-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRFBE30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBE30, SiHFBE30 O-220 O-220 12-Mar-07 IRFBE30

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    irfbe30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB 11-Mar-11 irfbe30

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling


    Original     		PDF IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 2011/65/EU 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration


    Original     		PDF IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-262) O-263) 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    AN609

    Abstract: IRFBE30 SiHFBE30
    Text: IRFBE30_RC, SiHFBE30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFBE30 SiHFBE30 AN609, 20-Apr-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling


    Original     		PDF IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30 Power MOSFET FEATURES D TO-220 • Dynamic dV/dt Rating • Repetitive Avalanche Rated G • Fast Switching • Ease of Paralleling S • Simple Drive Requirements G • Lead Pb -free Available D S N-Channel MOSFET DESCRIPTION PRODUCT SUMMARY The TO-220 package is universally preferred for all


    Original     		PDF IRFBE30 O-220 O-220 IRFBE30covery