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    213B1 Search Results

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    RJE7B18213B1 Amphenol Communications Solutions Modular Jack - 8P8C, RA, Cat6A, THT, Orange Housing, Recessed Profile, Single Port, Shield With Top and Side EMI Tabs, With LEDs Visit Amphenol Communications Solutions
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    213B1 Price and Stock

    KOA Speer Electronics Inc RN73H2BTTD1213B10

    RES 121K OHM 0.1% 1/4W 1206
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    DigiKey RN73H2BTTD1213B10 Cut Tape 990 1
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    Anatech Electronics Inc AE213B10681

    RF FILTER BAND PASS 213.5MHZ MOD
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    DigiKey AE213B10681 Box 100 1
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    Torex Semiconductor LTD XC9213B103VR-G

    IC REG BUCK 1V 5A 16TSSOP
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    DigiKey XC9213B103VR-G Cut Tape 100 1
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    Avnet Americas XC9213B103VR-G Reel 12 Weeks 3,000
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    Mouser Electronics XC9213B103VR-G
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    Avnet Silica XC9213B103VR-G 17 Weeks 3,000
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    Torex Semiconductor LTD XCL213B183DR

    1.5A INDUCTOR BUILT-IN STEP-DOWN
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    Newark XCL213B183DR Cut Tape 1
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    KOA Speer Electronics Inc RN73H1JTTD1213B10

    RES 121K OHM 0.1% 1/10W 0603
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    DigiKey RN73H1JTTD1213B10 Reel 5,000
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    213B1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A13B1

    Abstract: No abstract text available
    Text: 1 1234455678 96ABCADEFCC1C3C66C 1 131C7BA1C C C C C C C 13C9A1C 1 CDE33AAF1116511C11551 !61"F#$11#%71 1 #&11&11C12&6!'&1 ' !1!155(1&&11 !51 !61'51!*11)!571#&51C1! 137E+,11(151'51 1


    Original     		PDF 96ABCADEF CDE33AAF 137-E+ 01C3B2 1399F+ A13B1

    Untitled

    Abstract: No abstract text available
    Text: 1 1234456789 1 ABCDEF18DD1DF7CD3FD77D 1 1D31FD811 1 1 1 1 1 1DFF3DA11 CD51 EF3381 1 1 1 51 561 1  !1 " CD1 !1 D1 1 ,E1 2%D6-#D1 -&%1 %1 55&%1 D#D1


    Original     		PDF ABCDEF18D D5101 5251D 51C41 D5165

    21b121

    Abstract: k791 B791
    Text: 1 1234456789 A 1 B7CAD81EAFA1A8FCA38AA A A 1A318FAE1A 1A883ABF1A CDE33ABF111151561E115 51 61!51 "1#41$"1%B&9'&&91F 71 #*11*11+C12"*6, *1,$"1"155$"1* *1 1


    Original     		PDF B7CAD81EAF CDE33ABF 213B12 21b121 k791 B791

    S1D13746F01

    Abstract: CEA-608-B S1D13745 S1D13746 S1D13746B01B600 S1D13746F01A 400x240 1080p black test pattern marking 62H ESD BT119
    Text: S1D13746 TV Out Mobile Graphics Engine Hardware Functional Specification Document Number: X74B-A-001-02 Status: Revision 2.3 - EPSON CONFIDENTIAL Issue Date: 2011/06/09 SEIKO EPSON CORPORATION 2006 - 2011. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


    Original     		PDF S1D13746 X74B-A-001-02 S1D13746 S1D13746F01 CEA-608-B S1D13745 S1D13746B01B600 S1D13746F01A 400x240 1080p black test pattern marking 62H ESD BT119

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS

    Untitled

    Abstract: No abstract text available
    Text: 1 1234456789 1 A3BCDEF18DD1DF7D3FD77D 1 1D31FD811 1DFF3D1 1 DEF33BC1 1 1 F1 1 1 51  !561 F"1 #$1 5%51 !61 6551 &"D'1 6551 %51 61 1 #(5%5(1 6 6(1*+(571


    Original     		PDF A3BCDEF18D DEF33B 1467D3B2 213C12

    7009B

    Abstract: 42ab
    Text: 1 1234456789 1 4ABC4AD3EF8113 1 131 11 1 1 1 1 173! 11 45633789AB1 CD1 E1 F1 4CD1 CC1 6ED1 1 DC113 6!"1E13#6!"1$E1CC%E1&'E1 1 E1 5EED1 !*1 (ED%D1 +(CD1 ECC1 ,CD1 1


    Original     		PDF 45633789AB1 45633789AB1 31CD1E -16F44 7009B 42ab

    cf 455 e

    Abstract: BK37191 AF37A 1
    Text: 1 1234456789 A 31BBACDEA1DFBA8CFFAA A 1A318CABFFD11 1 1 1 1 1 1A883AD7CF11 CD51EF33981111515611 1!5"5!161E##1 $%1E&"'1#'5'51# '5 71 1CD51 EF33981 1 5'*65!1 1 51 "*651 !1 1 !'6'+1 !1


    Original     		PDF 31BBACDEA1DFB CD51EF 1CD51 1A7A41 571CD51EF 1E5C15 11131C D5165 cf 455 e BK37191 AF37A 1

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


    Original     		PDF 2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293

    Untitled

    Abstract: No abstract text available
    Text: 1 1234456789 1 ABCDEF81CEAE1BDE8BBDE38EBE 1 1E3D1D8ECDBB11 1E883DE7B1D1 DE51 F33B81 1 1 1 E51 51 !"1 # 1 "#51 $ 1 D#1 E5 51 51 "1 6" 5*1 E51 F33B81 #561 E)E1


    Original     		PDF ABCDEF81CE 1FGD15 E5165

    2sc5066

    Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs


    Original     		PDF SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    E5OU

    Abstract: 2-13B1A Ferrite core TDK 2SC2510 50wv 10ID 1S1555
    Text: TOSHIBA 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)


    OCR Scan     		PDF 2SC2510 30MHz 28MHz 150Wpep 000MHz 001MHz 100mA 961001EAA2' E5OU 2-13B1A Ferrite core TDK 2SC2510 50wv 10ID 1S1555

    60WpEp

    Abstract: 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290
    Text: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • • V / / / A Xr i X > T \ X * IA c A X . \ < ' X "H 02 ^ x ^ = r) Q = 'V i S b % — MAXIMUM RATINGS (Tc 25°C)


    OCR Scan     		PDF 2SC2290 30MHz 28MHz 60Wpep -30dB 961001EAA2' 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290

    2SC2290

    Abstract: 12ID 2SC2290 equivalent
    Text: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain Gp = 11.8dB (Min.)


    OCR Scan     		PDF 2SC2290 30MHz 28MHz 60Wpep 000MHz 001MHz 961001EAA2' 2SC2290 12ID 2SC2290 equivalent

    2SC2291

    Abstract: 2SC2320 2SC2338 2SC2285A-MA 2SA1010 2SC2289 2SC2318 2SC2329 2SC2286-KA 2SC2287-KA
    Text: - 120 - m % Ta=25'C, *EP(iTc=25<C m % f t & m & VcBO Vc e o (V) (V) 1c ( d c ) (A) Pc Pc* (W) m i CBC\ vm 3x j? VcB (V) (Uk) , hF E (min) ft fê (max) tt (Ta=25‘ 1C) Ic / I e (A) Vc e (V) 2SC2287-KA Bn an Bn Bn 2SC2287-MA bm VHF PA 38 18 1.5 17 500 30


    OCR Scan     		PDF 2SC2285A-MA 2SC2286-KA 2SC2286-MA 2SC2287-KA 2SC2287-MA 2SC2288-KÃ 2SC2288-MA 2SC2289-KA 33dBm 175MHz 2SC2291 2SC2320 2SC2338 2SA1010 2SC2289 2SC2318 2SC2329

    2SA899

    Abstract: 2SC1903 2SC1792 2sc1855 2-13B1A 2SC1815L 2SA1015L 2SC1840 2SA991 2sc1846
    Text: - no Ta=25‘ C, *EfJíáTc=25‘ C} •WTX -a m -Çt -Él iè m VCBO Vc e o IC(DC Pc Pc* (V) (V) (A) (W) (W) IcBO (max) (a a ) VcB (V) ñ (min) hFE ft & (max) fé Vc e (V) (13=25^) ïc/ OHHàtypfc] (max) (V) I e (A) (V) le (A) Ib (A) 2SC1763 30MHz PA 65


    OCR Scan     		PDF 2SC1763 30MHz 2SC1764 2SC1765 400MHz 2SC1775 2SC1775A 2SC1778 2SC1779 2SA899 2SC1903 2SC1792 2sc1855 2-13B1A 2SC1815L 2SA1015L 2SC1840 2SA991 2sc1846

    2SC2510

    Abstract: Ferrite core TDK
    Text: TOSHIBA 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE <;r i R1 n i 2-30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE U nit in mm Specified 28V, 28MHz Characteristics Po = 150WpEp O utput Power Power Gain. G p= 12.2dB (Min.)


    OCR Scan     		PDF 2SC2510 2-30M 28MHz 150WpEp --30dB 1S1555 961001EAA2' 2SC2510 Ferrite core TDK

    transistor A 564

    Abstract: S-AV8 2-13B1A 564 transistor S-AU4
    Text: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the


    OCR Scan     		PDF TcS90 transistor A 564 S-AV8 2-13B1A 564 transistor S-AU4

    100WPEP

    Abstract: Ferrite core TDK D1S1555
    Text: TOSHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ? R 7 Q 2-30MHZ SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • Specified 12,5V, 28MHz Characteristics • O utput Power r i c 'r , • • U nit in mm : Po = 100Wp e p


    OCR Scan     		PDF 2SC2879 2-30MHZ 28MHz 100Wp --24dB 1S1555 961001E 100WPEP Ferrite core TDK D1S1555

    2SC2652

    Abstract: 10ID 1S1555 50WV
    Text: T O S H IB A 2SC2652 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Unit in mm Specified 50V, 28MHz Characteristics Po = 200Wpj]p Output Power Power Gain Gp = 13dB (Min.)


    OCR Scan     		PDF 2SC2652 30MHz 28MHz 200Wpep 100mA 961001EAA2' 10ID 1S1555 50WV

    2-13B1A

    Abstract: Transistor S5B 2SC2290 equivalent 2sc2290
    Text: TO SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 -3 0 M H Z S5B LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP Power Gain Gp = 11.8dB (Min.)


    OCR Scan     		PDF 2SC2290 28MHz 60WpEP --30dB 961001EAA2' 2-13B1A Transistor S5B 2SC2290 equivalent 2sc2290