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    2SC2290

    Abstract: 2SC2290A
    Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)


    Original     		PDF 2SC2290A 30MHz 28MHz 60WPEP -30dB 2SC2290 2SC2290A

    2SC2290

    Abstract: TRANSISTOR 2sC2290 2SC2290 equivalent 60WpEp
    Text: 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.)


    Original     		PDF 2SC2290 30MHz 28MHz 60WPEP -30dB 001MHz 000MHz, 2SC2290 TRANSISTOR 2sC2290 2SC2290 equivalent 60WpEp

    2sc2290

    Abstract: No abstract text available
    Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60WPEP (Min.) Power Gain : Gp = 11.8dB (Min.)


    Original     		PDF 2SC2290A 30MHz 28MHz 60WPEP -30dB 2-13B1A 2sc2290

    2SC2290 equivalent

    Abstract: 2SC2290A 2SC2290 60WPEP
    Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)


    Original     		PDF 2SC2290A 30MHz 28MHz 60WPEP -30dB 2SC2290 equivalent 2SC2290A 2SC2290 60WPEP

    2SC2290

    Abstract: TRANSISTOR 2sC2290 Linear IC Guide 2-13B1A 2SC22
    Text: 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60WPEP (Min.) Power Gain : Gp = 11.8dB (Min.)


    Original     		PDF 2SC2290 30MHz 28MHz 60WPEP -30dB 001MHz 000MHz, 2SC2290 TRANSISTOR 2sC2290 Linear IC Guide 2-13B1A 2SC22

    POWER 28V 3A 60W

    Abstract: 0809LD60 200 watt hf mosfet
    Text: R.0.2P.991602-BEHRE 0809LD60 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION CASE OUTLINE 55QT Common Source The 0809LD60 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The


    Original     		PDF 991602-BEHRE 0809LD60 0809LD60 900MHz, 60WPEP, POWER 28V 3A 60W 200 watt hf mosfet

    POWER 28V 3A 60W

    Abstract: 0809LD60P 200 watt hf mosfet mosfet ghz
    Text: R.0.2P.991602-BEHRE 0809LD60P 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION CASE OUTLINE 55QU Common Source The 0809LD60P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The


    Original     		PDF 991602-BEHRE 0809LD60P 0809LD60P 900MHz, 60WPEP, POWER 28V 3A 60W 200 watt hf mosfet mosfet ghz

    An Introduction to Broadband Impedance Transformation for RF Power Amplifiers

    Abstract: transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors
    Text: From January 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High Frequency Design BROADBAND MATCHING An Introduction to Broadband Impedance Transformation for RF Power Amplifiers By Anthony J. Bichler RF Micro Devices, Inc. T


    Original     		PDF AN-721, An Introduction to Broadband Impedance Transformation for RF Power Amplifiers transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors

    2SC2290

    Abstract: 12ID 2SC2290 equivalent
    Text: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain Gp = 11.8dB (Min.)


    OCR Scan     		PDF 2SC2290 30MHz 28MHz 60Wpep 000MHz 001MHz 961001EAA2' 2SC2290 12ID 2SC2290 equivalent

    2SC2290

    Abstract: 2SC2290 equivalent
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 ~3 0MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics Output Power PO=60WPEP Minimum Gain Gpe=ll.8dB Efficiency nc=35/¡ (Min.) IMD=-30dB(Max.)


    OCR Scan     		PDF 2SC2290 28MHz 60WPEP -30dB Iidle-50mA, 60WpEP 150pF 200pF 2SC2290 2SC2290 equivalent

    2-13B1A

    Abstract: Transistor S5B 2SC2290 equivalent 2sc2290
    Text: TO SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 -3 0 M H Z S5B LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP Power Gain Gp = 11.8dB (Min.)


    OCR Scan     		PDF 2SC2290 28MHz 60WpEP --30dB 961001EAA2' 2-13B1A Transistor S5B 2SC2290 equivalent 2sc2290

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 Ç C 7 7 Q fl Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain


    OCR Scan     		PDF 2SC2290 28MHz 60WpEP 961001EAA2'

    60WpEp

    Abstract: 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290
    Text: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • • V / / / A Xr i X > T \ X * IA c A X . \ < ' X "H 02 ^ x ^ = r) Q = 'V i S b % — MAXIMUM RATINGS (Tc 25°C)


    OCR Scan     		PDF 2SC2290 30MHz 28MHz 60Wpep -30dB 961001EAA2' 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290

    SD1405

    Abstract: No abstract text available
    Text: S G S -T K O M S O N SD1405 \u RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • ■ . ■ ■ 30 MHz 12.5 VOLTS COMMON EMITTER IMD -3 2 dB GOLD METALLIZATION ■ P out = 75 W MIN. WITH 13 dB GAIN DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon


    OCR Scan     		PDF SD1405 SD1405 GD7D42S