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    Untitled

    Abstract: No abstract text available
    Text: IRFS750A Advanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max. @ VDS= 400V


    OCR Scan     		PDF IRFS750A

    9C1S

    Abstract: No abstract text available
    Text: SSW/Ï5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 800V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 MA Max. @ VM = 800V


    OCR Scan     		PDF 5N80A SSW/I5N80A 9C1S