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    20V SOT-23 P-CHANNEL MOSFET Search Results

    20V SOT-23 P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    20V SOT-23 P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APM2700A

    Abstract: APM2700AC STD-020C
    Text: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description N-Channel 20V/2A, RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • P-Channel Top View of SOT-23-6 -20V/-1.4A,


    Original     		APM2700AC OT-23-6 -20V/-1 APM2700A APM2700AC STD-020C PDF

    Untitled

    Abstract: No abstract text available
    Text: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description N-Channel 20V/2A, RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • P-Channel Top View of SOT-23-6 -20V/-1.4A,


    Original     		APM2700AC OT-23-6 -20V/-1 PDF

    2301P

    Abstract: AF2301P P-Channel MOSFET code L 1A 2301p marking
    Text: AF2301P 20V P-Channel Enhancement Mode MOSFET Features Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package VDS = - 20V


    Original     		AF2301P OT-23 2301P AF2301P P-Channel MOSFET code L 1A 2301p marking PDF

    APM2701AC

    Abstract: APM2701A apm2701 A104 diode MOSFET P-channel SOT-23-6 AAAX sot 26 Dual N-Channel MOSFET
    Text: APM2701AC Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel D1 20V/3A, S1 D2 RDS(ON)=50mΩ(typ.) @ VGS=4.5V RDS(ON)=65mΩ(typ.) @ VGS=2.5V • G1 P-Channel S2 G2 Top View of SOT-23-6 -20V/-2A, RDS(ON)=90mΩ(typ.) @ VGS=-4.5V


    Original     		APM2701AC -20V/-2A, OT-23-6 APM2701A OT-23-6 JESD-22, APM2701AC apm2701 A104 diode MOSFET P-channel SOT-23-6 AAAX sot 26 Dual N-Channel MOSFET PDF

    Mosfet

    Abstract: SSF2341E marking 2341E 2341E marking 4a sot23
    Text: SSF2341E 20V P-Channel MOSFET Main Product Characteristics VDSS -20V RDS on 37mΩ (typ.) ID -4A ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF2341E OT-23 for2341E 2341E Mosfet SSF2341E marking 2341E 2341E marking 4a sot23 PDF

    SSS2301A

    Abstract: sot-23 P-Channel MOSFET
    Text: SSS2301A P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb free.


    Original     		SSS2301A OT-23 OT-23 SSS2301A sot-23 P-Channel MOSFET PDF

    sss2309

    Abstract: No abstract text available
    Text: SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		SSS2309 OT-23 OT-23 sss2309 PDF

    marking W26 sot23

    Abstract: transistor w26 sot23 transistor marking w26 marking CODE w26
    Text: Product specification WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS V Rds(on) (ȍ) 0.056@ VGS=̢4.5V 0.069@ VGS=̢2.5V -20 0.086@ VGS=̢1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced


    Original     		WPM2026 OT-23 WPM2026 marking W26 sot23 transistor w26 sot23 transistor marking w26 marking CODE w26 PDF

    SSS2209

    Abstract: sot-23 P-Channel MOSFET
    Text: SSS2209 P-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 170 @VGS = -4.5V -2.0A -20V G 240 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		SSS2209 OT-23 OT-23 SSS2209 sot-23 P-Channel MOSFET PDF

    sot-23 P-Channel MOSFET

    Abstract: No abstract text available
    Text: SSS2323 P-Channel Enhancement Mode MOSFET SOT-23 Product Summary VDS V ID (A) D RDS(ON) 35 @VGS = -4.5V G 55 @VGS = -2.5V -4A -20V S 100 @VGS = -1.8V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S Pb free.


    Original     		SSS2323 OT-23 OT-23 sot-23 P-Channel MOSFET PDF

    Mosfet

    Abstract: SSF2301 2301 marking sot-23
    Text: SSF2301 20V P-Channel MOSFET Main Product Characteristics D VDSS -20V RDS on 60mΩ (typ.) ID -3A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF2301 OT-23 reliabSSF2301 Mosfet SSF2301 2301 marking sot-23 PDF

    M2301A

    Abstract: APM2301A J-STD-020A 2301AA
    Text: APM2301A P-Channel Enhancement Mode MOSFET Features Pin Description D • -20V/-3A , RDS ON =72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged SOT-23 Package G Top View of SOT-23


    Original     		APM2301A -20V/-3A OT-23 OT-23 M2301A APM2301A J-STD-020A 2301AA PDF

    SI2301

    Abstract: si2301 sot-23
    Text: SI2301 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23(PACKAGE)


    Original     		SI2301 OT-23 SI2301 si2301 sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDN338P 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS ON , Vgs@-4.5V, Ids@-1.6A= 115m Ω RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23(PACKAGE)


    Original     		FDN338P OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type MOSFET Complementary PowerTrench MOSFET KDC6020C FDC6020C ( SOT-23-6 ) Unit: mm • Features ● RDS(ON) ＜ 27mΩ (V GS = 4.5V) ● RDS(ON) ＜ 39mΩ (V GS = 2.5V) 6 5 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=5.9A 4 ● P-Channel： VDS =-20V ID=-4.2A


    Original     		KDC6020C FDC6020C) OT-23-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type MOSFET Dual Enhancement Mode MOSFET APM2701CG • Features SOT-23-6 Unit: mm ● RDS(ON) ＜ 70mΩ (V GS = 4.5V) ● RDS(ON) ＜ 110mΩ (VGS = 2.5V) S1 D1 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=3A D2 ● P-Channel： VDS =-20V ID=-1.5A


    Original     		APM2701CG OT-23-6 PDF

    2301P

    Abstract: 2301p marking AF2301P
    Text: AF2301P 20V P-Channel Enhancement Mode MOSFET „ Features „ Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package


    Original     		AF2301P OT-23 2301P OT23-3 2301p marking AF2301P PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS V -20 Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V Descriptions SOT-23 D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)


    Original     		WPM2015 OT-23 WPM2015 PDF

    APM2700AC

    Abstract: APM2700A MOSFET P SOT-23 S1 SOT-23-6 SOT-23 marking 2f p-Channel ISD05 sot-23-6 n-channel mosfet
    Text: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 20V/2A, D1 RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V S1 D2 RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • G1 S2 G2 P-Channel Top View of SOT-23-6


    Original     		APM2700AC OT-23-6 -20V/-1 APM2700AC APM2700A MOSFET P SOT-23 S1 SOT-23-6 SOT-23 marking 2f p-Channel ISD05 sot-23-6 n-channel mosfet PDF

    mosfet ir 840

    Abstract: IRLML6402 irlml6402 equivalent IRLML6402 micro3 IC BA 9 AN-994 g 995
    Text: PD- 93755 IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize


    Original     		IRLML6402 OT-23 pac10) mosfet ir 840 IRLML6402 irlml6402 equivalent IRLML6402 micro3 IC BA 9 AN-994 g 995 PDF

    IRLML6402

    Abstract: AN-994 IRLML2402 IRLML6302 IRLML6402 micro3 application IRLML2502
    Text: PD - 93755B IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize


    Original     		93755B IRLML6402 OT-23 EIA-481 EIA-541. IRLML6402 AN-994 IRLML2402 IRLML6302 IRLML6402 micro3 application IRLML2502 PDF

    ML5203

    Abstract: IRLML6402 sot-23 marking code pe irlml2803 AN-994 IRLML6402 micro3 93755C irlml6402 in TO-92
    Text: PD - 93755C IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize


    Original     		93755C IRLML6402 OT-23 EIA-481 EIA-541. ML5203 IRLML6402 sot-23 marking code pe irlml2803 AN-994 IRLML6402 micro3 93755C irlml6402 in TO-92 PDF

    Untitled

    Abstract: No abstract text available
    Text: AP2301BGN-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Simple Drive Requirement Small Package Outline -20V RDS ON D 130m ID Surface Mount Device - 2.8A RoHS Compliant & Halogen-Free S SOT-23 Description


    Original     		AP2301BGN-HF OT-23 OT-23 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/6 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -2.2A 3 1 3-Lead Plastic SOT-23 Package Code: P Pin 1: Gate 2: Source 3: Drain


    Original     		MOS200836 H2301N H2301N OT-23 183oC 217oC 260oC 10sec PDF