SOT23
Abstract: SSF2301A 2301A
Text: SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES
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SSF2301A
SSF2301A
SOT23
2301A
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Untitled
Abstract: No abstract text available
Text: SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES
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GDSSF2301A
SSF2301A
SSF2301A
ABSOT-23
950TYP
550REF
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Mosfet
Abstract: SSF2301A
Text: SSF2301A 20V P-Channel MOSFET D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
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SSF2301A
SSF2301A
OT-23
950TYP
550REF
Mosfet
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SSF2301
Abstract: 2301 marking sot-23
Text: SSF2301 D DESCRIPTION The SSF2301 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram
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SSF2301
SSF2301
2301 marking sot-23
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SOT23
Abstract: SSF2301B 2301B
Text: SSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES
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SSF2301B
SSF2301B
2301B
180mrameters)
SOT23
2301B
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Mosfet
Abstract: SSF2301B
Text: SSF2301B 20V P-Channel MOSFET D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
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SSF2301B
SSF2301B
OT-23
950TYP
550REF
Mosfet
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2301B
Abstract: No abstract text available
Text: SSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES
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GDSSF2301B
SSF2301B
2301B
OT-23
950TYP
550REF
2301B
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Mosfet
Abstract: SSF2301 2301 marking sot-23
Text: SSF2301 20V P-Channel MOSFET Main Product Characteristics D VDSS -20V RDS on 60mΩ (typ.) ID -3A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2301
OT-23
reliabSSF2301
Mosfet
SSF2301
2301 marking sot-23
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