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    sss2309

    Abstract: No abstract text available
    Text: SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mĪ©) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES ā—† Super high dense cell design for low RDS(ON). G ā—† Rugged and reliable. ā—† SOT-23 package.


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    PDF SSS2309 OT-23 OT-23 sss2309