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Micro Commercial Components SI2301-TP MOSFET P-CH 20V 2.8A SOT-23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2301-TP	Cut Tape	52,442		1	1 $0.95 10 $0.594 100 $0.95 1000 $0.26866 10000 $0.26866	Buy Now
	SI2301-TP	Digi-Reel	52,442		1	1 $0.95 10 $0.594 100 $0.95 1000 $0.26866 10000 $0.26866	Buy Now
	SI2301-TP	Reel	51,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.2321	Buy Now
Mouser Electronics	SI2301-TP		3,140			1 $0.44 10 $0.272 100 $0.173 1000 $0.121 10000 $0.121	Buy Now
Newark	SI2301-TP	Cut Tape			5	1 $0.203 10 $0.203 100 $0.203 1000 $0.203 10000 $0.203	Buy Now
New Advantage Corporation	SI2301-TP		420,000		1	1 - 10 - 100 - 1000 - 10000 $0.0416	Buy Now
Win Source Electronics	SI2301-TP		12,200			1 - 10 - 100 - 1000 - 10000 $0.0251	Buy Now
Vishay Siliconix SI2301BDS-T1-GE3 MOSFET P-CH 20V 2.2A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2301BDS-T1-GE3	Digi-Reel	14,524		1	1 $0.76 10 $0.473 100 $0.76 1000 $0.20928 10000 $0.20928	Buy Now
	SI2301BDS-T1-GE3	Cut Tape	14,524		1	1 $0.76 10 $0.473 100 $0.76 1000 $0.20928 10000 $0.20928	Buy Now
	SI2301BDS-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.17954	Buy Now
Quest Components	SI2301BDS-T1-GE3		5			1 $0.3 10 $0.3 100 $0.3 1000 $0.3 10000 $0.3	Buy Now
Vishay Siliconix SI2301CDS-T1-BE3 P-CHANNEL 20-V (D-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2301CDS-T1-BE3	Cut Tape	8,486		1	1 $0.52 10 $0.318 100 $0.52 1000 $0.13547 10000 $0.13547	Buy Now
	SI2301CDS-T1-BE3	Digi-Reel	8,486		1	1 $0.52 10 $0.318 100 $0.52 1000 $0.13547 10000 $0.13547	Buy Now
	SI2301CDS-T1-BE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.11482	Buy Now
Micro Commercial Components SI2301HE3-TP P-CHANNEL MOSFET,SOT-23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2301HE3-TP	Cut Tape	6,000		1	1 $0.45 10 $0.279 100 $0.45 1000 $0.11742 10000 $0.11742	Buy Now
Mouser Electronics	SI2301HE3-TP					1 $0.43 10 $0.327 100 $0.204 1000 $0.11 10000 $0.082	Get Quote
Vishay Siliconix SI2301BDS-T1-BE3 P-CHANNEL 2.5-V (G-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2301BDS-T1-BE3	Cut Tape	3,800		1	1 $0.59 10 $0.362 100 $0.59 1000 $0.15624 10000 $0.15624	Buy Now
	SI2301BDS-T1-BE3	Digi-Reel	3,800		1	1 $0.59 10 $0.362 100 $0.59 1000 $0.15624 10000 $0.15624	Buy Now
	SI2301BDS-T1-BE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.13295	Buy Now

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SI2301 Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF
SI2301-3A	Unknown	MOSFET SOT-23 P Channel 20V	Original	PDF
Si2301ADS	Vishay Intertechnology	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI2301ADS	Vishay Telefunken	V(ds): -20V V(gs): ±8V P-channel 2.5-V (G-S) MOSFET	Original	PDF
Si2301ADS-E3	Vishay	Transistor Mosfet P-CH 20V 1.75A 3TO-236	Original	PDF
Si2301ADS-T1	Vishay	Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL	Original	PDF
Si2301ADS-T1-E3	Vishay	Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL	Original	PDF
SI2301A-TP	Micro Commercial	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL,MOSFETS,SOT-23 PACKAGE	Original	PDF
Si2301BD	Vishay Siliconix	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI2301BDS	Vishay Siliconix	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
Si2301BDS-E3	Vishay	Transistor Mosfet P-CH 20V 2.2A 3TO-236	Original	PDF
Si2301BDS SPICE Device Model	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI2301BDST1	Vishay	MOSFET,P CHAN,2.5V,SOT23	Original	PDF
Si2301BDS-T1	Vishay Siliconix	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
Si2301BDS-T1-E3	Vishay	Transistor Mosfet P-CH 20V 2.2A 3TO-236 T/R	Original	PDF

SI2301BDS-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.2A SOT23-3	Original	PDF
SI2301BDS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.2A SOT23-3	Original	PDF
SI2301CDS-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.1A SOT23-3	Original	PDF
SI2301CDS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.1A SOT23-3	Original	PDF
Si2301DS	Unknown	Metal oxide P-channel FET, Enhancement Type	Original	PDF
Si2301DS	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF

SI2301 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
si2301 Abstract: No abstract text available Text: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC	PDF
si2301cds-t1-ge3 Abstract: No abstract text available Text: Specification Comparison www.vishay.com Vishay Siliconix Si2301CDS vs. Si2301BDS Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2301CDS-T1-GE3 replaces Si2301BDS-T1-GE3 Si2301CDS-T1-E3 replaces Si2301BDS-T1-E3	Original	Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1	PDF
SI2301 Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2301 Features • • • • • • • • P-Channel Enhancement Mode -20V,-2.8A, RDS ON =120mΩ@VGS=-4.5V	Original	SI2301 OT-23 OT-23 SI2301	PDF
Si2301 Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3 Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)	Original	Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 08-Apr-05	PDF
Si2301CDS Abstract: SI2301CDS-T1-GE3 Si2301CDS-T1-E3 MOSFET SOT-23 Si2301BDS-T1-GE3 SI2301BDS Si2301BDS-T1 Si2301BDS-T1-E3 Text: Specification Comparison Vishay Siliconix Si2301CDS vs. Si2301BDS Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2301CDS-T1-GE3 replaces Si2301BDS-T1-GE3 Si2301CDS-T1-E3 replaces Si2301BDS-T1-E3 Si2301CDS-T1-GE3 or Si2301CDS-T1-E3 replaces Si2301BDS-T1	Original	Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1 MOSFET SOT-23	PDF
Si2301 Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = −4.5 V −2.4 0.150 @ VGS = −2.5 V −2.0 VDS (V) −20 20 D RoH Lead (Pb)-Free Version is RoHS Compliant Available TO-236 (SOT-23) G 1 3	Original	Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301BDS-T1--E3 Si2301 S-50694--Rev. 18-Apr-05 Si2301BDS SPICE Device Model	PDF
si2301 Abstract: "MARKING CODE S1" si2301 sot-23 Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2301 Features • • • • • • • P-Channel Enhancement Mode -20V,-2.8A, RDS ON =120mΩ@VGS=-4.5V	Original	SI2301 OT-23 si2301 "MARKING CODE S1" si2301 sot-23	PDF
Si2301 Abstract: Si2301BDS Text: Si2301BDS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = -4.5 V -2.4 0.150 @ VGS = -2.5 V -2.0 VDS (V) -20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301 BDS (L1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2301BDS O-236 OT-23) Si2301 S-22048--Rev. 18-Nov-02	PDF
SI2301DS Abstract: S5135 Text: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si2301DS O-236 OT-23) S-51354--Rev. 11-Dec-96 S5135	PDF
Si2301 Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3 Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)	Original	Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 11-Mar-11	PDF
2430 marking Abstract: No abstract text available Text: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2301CDS 2002/95/EC O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 18-Jul-08 2430 marking	PDF
TP548 Abstract: TP547 tp546 RLS4148 cke2 RSMRST R586 Text: 1 2 3 4 5 6 7 8 sent to d/d bd for charging comparator ckt when system is in powered off state Q508 SI2301DS VDD5 TP516 GCL_STPCLK# 2,5 TP542 GCL_CPUSTP# 5,8 TP543 PCI_STP# 8,12 VDD5S D S A TP549 G R549 100K 0603 SDRAMCLK0 6,8 TP550 TP21 ADEN# 20,25 BAS16	Original	SI2301DS TP543 TP516 TP542 TP549 TP550 BAS16 TP527 DTC144WK TP544 TP548 TP547 tp546 RLS4148 cke2 RSMRST R586	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si2301CDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	Si2301CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI2301 Abstract: si2301 sot-23 Text: SI2301 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23(PACKAGE)	Original	SI2301 OT-23 SI2301 si2301 sot-23	PDF

Untitled Abstract: No abstract text available Text: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
Untitled Abstract: No abstract text available Text: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2301CDS 2002/95/EC O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
SI2301DS Abstract: No abstract text available Text: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si2301DS O-236 OT-23) S-51354--Rev. 11-Dec-96	PDF
SI2301CDS-T1-GE3 Abstract: diode 18B Text: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2301CDS 2002/95/EC O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 11-Mar-11 diode 18B	PDF
Untitled Abstract: No abstract text available Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code	Original	Si2301DS O-236 OT-23) Si2301DS-T1 08-Apr-05	PDF
si2301ads Abstract: No abstract text available Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2301ADS O-236 OT-23) Si2301DS 08-Apr-05	PDF
Si2301 Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = −4.5 V −2.4 0.150 @ VGS = −2.5 V −2.0 VDS (V) −20 20 D RoH Lead (Pb)-Free Version is RoHS Compliant Available TO-236 (SOT-23) G 1 3	Original	Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301BDS-T1--E3 Si2301 08-Apr-05 Si2301BDS SPICE Device Model	PDF
SI2301DS Abstract: si2301 Si2301DS SPICE Device Model SI2301DS* equivalent Text: SPICE Device Model Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V Rated MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si2301DS 17-Apr-01 si2301 Si2301DS SPICE Device Model SI2301DS* equivalent	PDF
Si2301DS Abstract: No abstract text available Text: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2301DS O-236 OT-23) S-58543--Rev. 20-Jul-98	PDF
Si2301CDS Abstract: SI2301CDS-T1-GE3 SI2301CDS-T1-E3 Text: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2301CDS 2002/95/EC O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 18-Jul-08	PDF

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Micro Commercial Components SI2301-TP

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SI2301 Datasheets (29)

SI2301 Datasheets Context Search

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si2301cds-t1-ge3

SI2301

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Si2301

2430 marking

TP548

Untitled

SI2301

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SI2301DS

SI2301CDS-T1-GE3

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si2301ads

Si2301

SI2301DS

Si2301DS

Si2301CDS