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    20N60C Price and Stock

    Infineon Technologies AG SPP20N60C3XKSA1

    MOSFET N-CH 600V 20.7A TO220-3
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    DigiKey SPP20N60C3XKSA1 Tube 4,000 1
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    Avnet Americas SPP20N60C3XKSA1 Tube 4 Weeks 123
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    Mouser Electronics SPP20N60C3XKSA1 1,420
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    Newark SPP20N60C3XKSA1 Bulk 7,036 1
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    Rochester Electronics SPP20N60C3XKSA1 1,094 1
    • 1 $2.17
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    Chip1Stop SPP20N60C3XKSA1 84,399
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    SPP20N60C3XKSA1 408
    • 1 $5.389
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    SPP20N60C3XKSA1 151
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    EBV Elektronik SPP20N60C3XKSA1 314,500 16 Weeks 500
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    New Advantage Corporation SPP20N60C3XKSA1 400 1
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    Win Source Electronics SPP20N60C3XKSA1 15,400
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    Infineon Technologies AG AIKB20N60CTATMA1

    IC DISCRETE 600V TO263-3
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    DigiKey AIKB20N60CTATMA1 Cut Tape 3,999 1
    • 1 $4.18
    • 10 $3.049
    • 100 $2.4561
    • 1000 $2.21874
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    AIKB20N60CTATMA1 Digi-Reel 3,999 1
    • 1 $4.18
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    AIKB20N60CTATMA1 Reel 3,000 1,000
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    Avnet Americas AIKB20N60CTATMA1 Reel 26 Weeks 1,000
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    Mouser Electronics AIKB20N60CTATMA1 934
    • 1 $3.96
    • 10 $3.05
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    Newark AIKB20N60CTATMA1 Cut Tape 1,869 1
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    Chip1Stop AIKB20N60CTATMA1 Cut Tape 1,000
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    EBV Elektronik AIKB20N60CTATMA1 27 Weeks 1,000
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    Infineon Technologies AG SPB20N60C3ATMA1

    MOSFET N-CH 650V 20.7A TO263-3
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    DigiKey SPB20N60C3ATMA1 Digi-Reel 2,801 1
    • 1 $6.2
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    SPB20N60C3ATMA1 Cut Tape 2,801 1
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    SPB20N60C3ATMA1 Reel 2,000 1,000
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    Avnet Americas SPB20N60C3ATMA1 Reel 3,000 15 Weeks 1,000
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    Newark SPB20N60C3ATMA1 Cut Tape 5,880 1
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    SPB20N60C3ATMA1 Reel 1,000
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    SPB20N60C3ATMA1 Reel 1,000
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    Ameya Holding Limited SPB20N60C3ATMA1 480
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    Chip1Stop SPB20N60C3ATMA1 1
    • 1 $2.76
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    EBV Elektronik SPB20N60C3ATMA1 237,000 16 Weeks 1,000
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    New Advantage Corporation SPB20N60C3ATMA1 190,000 1
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    Win Source Electronics SPB20N60C3ATMA1 25,719
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    Infineon Technologies AG SPW20N60C3FKSA1

    MOSFET N-CH 650V 20.7A TO247-3
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    DigiKey SPW20N60C3FKSA1 Tube 1,898 1
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    Avnet Americas SPW20N60C3FKSA1 Bulk 16 Weeks, 4 Days 1
    • 1 $6.68
    • 10 $6.07
    • 100 $4.93
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    SPW20N60C3FKSA1 Tube 15 Weeks 240
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    Newark SPW20N60C3FKSA1 Bulk 14 1
    • 1 $4.08
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    Chip1Stop SPW20N60C3FKSA1 201
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    SPW20N60C3FKSA1 21
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    EBV Elektronik SPW20N60C3FKSA1 16 Weeks 240
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    New Advantage Corporation SPW20N60C3FKSA1 420 1
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    Win Source Electronics SPW20N60C3FKSA1 70,942
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    Infineon Technologies AG AIKQ120N60CTXKSA1

    IGBT TRENCH/FS 600V 160A TO247-3
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    DigiKey AIKQ120N60CTXKSA1 Tube 162 1
    • 1 $13.65
    • 10 $10.451
    • 100 $13.65
    • 1000 $8.34311
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    Avnet Americas AIKQ120N60CTXKSA1 Tube 26 Weeks 240
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    Mouser Electronics AIKQ120N60CTXKSA1 480
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    Chip1Stop AIKQ120N60CTXKSA1 Tube 240
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    EBV Elektronik AIKQ120N60CTXKSA1 27 Weeks 240
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    Find more 20N60C price and stock on Findchips.com

    20N60C Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    20N60C3DR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N60C3R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N60C3R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    20N60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions


    Original     		PDF 20N60C5M O-220

    20n60c5

    Abstract: DSA003709
    Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)


    Original     		PDF 20N60C5 O-247 O-220 20070625a DSA003709

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		PDF 20N60C5M O-220

    20n60c

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600


    Original     		PDF ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c

    Untitled

    Abstract: No abstract text available
    Text: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D fl D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET


    Original     		PDF 20N60C5 O-247 O-220 20080523d

    20N60C

    Abstract: No abstract text available
    Text: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		PDF 20N60C ISOPLUS220TM E72873 20080523a 20N60C

    20N60C

    Abstract: UPS 380v
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600


    Original     		PDF ISOPLUS220TM 20N60C 220LVTM 728B1 065B1 123B1 20N60C UPS 380v

    UPS 380v

    Abstract: 20n60c power switching
    Text: CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , Superjunction MOSFET VDSS = 600 V ID25 = 14 A Ω RDS(on) = 190 mΩ Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220LVTM


    Original     		PDF 20N60C ISOPLUS220TM 220LVTM E153432 728B1 065B1 123B1 UPS 380v 20n60c power switching

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol


    Original     		PDF 20N60C5M O-220 20070704a

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		PDF 20N60C5M O-220

    20n60c5

    Abstract: IXKH20N60C5 20n60c IXKP20N60C5 20n60c* equivalent 20n60 K 739 mosfet MOSFET "symbol 7V" MOSFET N
    Text: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET Symbol


    Original     		PDF 20N60C5 O-247 O-220 20080523d 20n60c5 IXKH20N60C5 20n60c IXKP20N60C5 20n60c* equivalent 20n60 K 739 mosfet MOSFET "symbol 7V" MOSFET N

    20n60c

    Abstract: UPS 380v IXKC 20n60c
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface VDSS = 600 V ID25 = 14 A Ω RDS on = 190 mΩ N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS220TM 20N60C 220TM ISOPLUS220 20n60c UPS 380v IXKC 20n60c

    20n60c5

    Abstract: 20n60c5m
    Text: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 20N60C5M O-220 20090209d 20n60c5 20n60c5m

    Untitled

    Abstract: No abstract text available
    Text: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 20N60C5M O-220 20090209d

    Untitled

    Abstract: No abstract text available
    Text: IXKH 20N60C5 IXKP 20N60C5 COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET Symbol


    Original     		PDF 20N60C5 O-247 O-220 20080310c

    20n60c5

    Abstract: No abstract text available
    Text: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 20N60C5M O-220 20080523c 20n60c5

    20n60c

    Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c
    Text: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:


    Original     		PDF 20N60C, 40N60C 40N60SCD1 40N60C, 75N60C 14F12 20n60c 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c

    Untitled

    Abstract: No abstract text available
    Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)


    Original     		PDF 20N60C5 O-247 O-220 20070625a

    Untitled

    Abstract: No abstract text available
    Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information ID25 = 20 A = 600 V VDSS RDS on max = 0.2 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP) G


    Original     		PDF 20N60C5 20N60C5 O-247 O-220 Appli300

    20n60c

    Abstract: No abstract text available
    Text: IXKC 20N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 15 A RDS on max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		PDF 20N60C ISOPLUS220TM E72873 20n60c

    Untitled

    Abstract: No abstract text available
    Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) TO-220 AB (IXKP)


    Original     		PDF 20N60C5 O-247 O-220

    20n60c

    Abstract: IXKC 20n60c E72873 A8711
    Text: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		PDF 20N60C ISOPLUS220TM E72873 20080523a 20n60c IXKC 20n60c E72873 A8711

    20n60c3

    Abstract: 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60
    Text: Preliminary data 20N60C3, 20N60C3 20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge


    Original     		PDF SPP20N60C3, SPB20N60C3 SPA20N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP20N60C3 Q67040-S4398 20n60c3 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60

    20n60c3DR

    Abstract: 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D
    Text: 20N60C3DR S E M I C O N D U C T O R 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		PDF HGTG20N60C3DR 150oC 330ns 1-800-4-HARRIS 20n60c3DR 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D