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Infineon Technologies AG IHW20N140R5LXKSA1 HOME APPLIANCES 14
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IHW20N140R5LXKSA1	Tube	188		1	1 $3.53 10 $3.53 100 $1.92467 1000 $1.30861 10000 $1.14412	Buy Now
Avnet Americas	IHW20N140R5LXKSA1	Tube	240	19 Weeks	240	1 - 10 - 100 $1.27227 1000 $1.27227 10000 $1.27227	Buy Now
Mouser Electronics	IHW20N140R5LXKSA1		188			1 $3.08 10 $1.81 100 $1.5 1000 $1.17 10000 $1.14	Buy Now
Newark	IHW20N140R5LXKSA1	Bulk	220		1	1 $3.06 10 $2.01 100 $1.71 1000 $1.44 10000 $1.44	Buy Now
EBV Elektronik	IHW20N140R5LXKSA1			20 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH20N140C3H1 IGBT 1400V 42A 250W TO247
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DigiKey	IXGH20N140C3H1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Integrated Circuits Division IXGH20N140C3H1 IGBT DIS.DIODE SINGLE 20A 1400V GENX3 TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXGH20N140C3H1					1 $8.64666 10 $8.64666 100 $7.8606 1000 $7.8606 10000 $7.8606	Get Quote
IXYS Integrated Circuits Division IXGT20N140C3H1 IGBT DIS.DIODE SINGLE 20A 1400V GENX3 TO268(D3PAK)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXGT20N140C3H1					1 $7.8441 10 $7.8441 100 $7.131 1000 $7.131 10000 $7.131	Get Quote

20N140 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
20N160 Abstract: crt flyback Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 20N140 IXBH 20N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 20 A 4.7 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings	Original	20N140 20N160 O-247 IXBH20 20N160 crt flyback	PDF
15N160 Abstract: 40N160 9N160 40N140 Text: BIMOSFET TM B-Series Contents 1999 IXYS All rights reserved VDSS IC cont VCE(sat) max TC = 25 °C TC = 25°C TO-247 Page V A V 1400 1600 9 7.0 IXBH 9N140 IXBH 9N160 C4 - 2 C4 - 2 1400 1600 15 7.0 IXBH 15N140 IXBH 15N140 C4 - 4 C4 - 4 1400 1600 20 6.5 IXBH 20N140	Original	O-247 9N140 9N160 15N140 20N140 20N160 40N140 40N160 15N160 40N160 9N160 40N140	PDF
40N160 Abstract: 16N170 Text: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33	Original	16N170A 16N170 42N170 40N160 9N160 15N140	PDF
20N160 Abstract: 20N140 Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 20N140 IXBH 20N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 20 A 4.7 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings	Original	20N140 20N160 O-247 20N160 IXBH20	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
IXAN0014 Abstract: 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements Text: Technical Application IXAN0014 Comparative Performance of BIMOSFETs in Fly-Back Converter Circuits One of the typical applications for a flyback converter is the auxiliary power supply for the IGBT gate driver in an inverter. The essential requirement for a switch of a flyback converter in a drives inverter is a high breakdown voltage combined with fast	Original	IXAN0014 D-68623 IXAN0014 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements	PDF
BERULUB FR 16 Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B Text: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits	Original	ISOPLUS247 UC3854A UC3854B DN-44, TDA4817 BERULUB FR 16 ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B	PDF
Untitled Abstract: No abstract text available Text: n ix Y S Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor V CES IXBH 20N140 IXBH 20N160 ^C25 V CE sat N -C hannel, E n hance m en t M ode tfi 1400/1600 V 20 A 5.4 V typ. 35 ns TO-247 AD Symbol Conditions Maximum Ratings	OCR Scan	20N140 20N160 O-247 D-68623	PDF
IXBH 40N160 Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1 Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □	OCR Scan	20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1	PDF
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6	PDF
DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50	PDF
10C4 Abstract: 20N160 Text: imxYs I ~ BIM OSFET 0-Series _ Contents 1999 IX Y S All rights reserved v DSS ^C cont V CE(sat) max T c = 25 °C T c = 25°C V A V 1400 1600 9 1400 1600 TO-247 Page 7.0 IX BH 9N140 IXBH 9N160 C4-2 C4-2 15 7.0 IX B H 15N140 IX B H 15N140	OCR Scan	O-247 9N140 9N160 15N140 20N140 20N160 40N140 40N160 10C4	PDF