20N1 Search Results

20N1 Result Highlights (5)

Part	Manufacturer	Description
NP20N10YDF-E1-AY	Renesas Electronics Corporation	Power MOSFETs for Automotive
NP20N10YDF-E2-AY	Renesas Electronics Corporation	Power MOSFETs for Automotive
UPD120N15TA-A	Renesas Electronics Corporation	3 Terminal Regulators, MM, /
UPD120N18T1B-E1-AZ	Renesas Electronics Corporation	3 Terminal Regulators, POMM, /
UPD120N15TA-E1-A	Renesas Electronics Corporation	3 Terminal Regulators, MM, /

20N1 Price and Stock

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Vishay Siliconix SUD20N10-66L-GE3 MOSFET N-CH 100V 16.9A TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SUD20N10-66L-GE3	Cut Tape	6,705		1	1 $1.24 10 $0.78 100 $1.24 1000 $0.36295 10000 $0.36295	Buy Now
	SUD20N10-66L-GE3	Digi-Reel	6,705		1	1 $1.24 10 $0.78 100 $1.24 1000 $0.36295 10000 $0.36295	Buy Now
	SUD20N10-66L-GE3	Reel	6,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.27779	Buy Now
onsemi NVH4L020N120SC1 SICFET N-CH 1200V 102A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVH4L020N120SC1	Tube	1,342		1	1 $49.69 10 $49.69 100 $35.38533 1000 $35.38533 10000 $35.38533	Buy Now
Newark	NVH4L020N120SC1	Bulk	252		1	1 $40.73 10 $39.6 100 $33.7 1000 $32.58 10000 $32.58	Buy Now
Richardson RFPD	NVH4L020N120SC1				450	1 - 10 - 100 - 1000 $35.39 10000 $35.39	Buy Now
Avnet Silica	NVH4L020N120SC1		180	18 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NVH4L020N120SC1		180	19 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	NVH4L020N120SC1		150		1	1 - 10 - 100 $72.84 1000 $67.41 10000 $67.41	Buy Now
Cal-Chip Electronics CHV2220N1K0102JCT HVCAP2220 COG 1000PF 5% 1KV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CHV2220N1K0102JCT	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.47014 10000 $2.47014	Buy Now
	CHV2220N1K0102JCT	Digi-Reel	1,000		1	1 $5.83 10 $3.964 100 $2.9743 1000 $2.57166 10000 $2.57166	Buy Now
	CHV2220N1K0102JCT	Cut Tape	1,000		1	1 $5.83 10 $3.964 100 $2.9743 1000 $2.57166 10000 $2.57166	Buy Now
Cal-Chip Electronics CHV2220N1K0472JCT HVCAP2220 COG 4700PF 5% 1KV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CHV2220N1K0472JCT	Digi-Reel	880		1	1 $4.13 10 $2.751 100 $2.0213 1000 $1.72472 10000 $1.72472	Buy Now
	CHV2220N1K0472JCT	Cut Tape	880		1	1 $4.13 10 $2.751 100 $2.0213 1000 $1.72472 10000 $1.72472	Buy Now
Analog Devices Inc ADUM220N1BRWZ DGTL ISO 5000VRMS 2CH GP 16SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ADUM220N1BRWZ	Tube	376		1	1 $4.71 10 $3.059 100 $4.71 1000 $1.74752 10000 $1.6375	Buy Now
Analog Devices Inc	ADUM220N1BRWZ		36,125			1 $2.47 10 $2.47 100 $2.47 1000 $1.31 10000 $1.31	Buy Now
Rochester Electronics	ADUM220N1BRWZ		154		1	1 $1.82 10 $1.82 100 $1.71 1000 $1.55 10000 $1.55	Buy Now
Richardson RFPD	ADUM220N1BRWZ				376	1 - 10 - 100 - 1000 $1.71 10000 $1.71	Buy Now
Win Source Electronics	ADUM220N1BRWZ		7,100			1 - 10 - 100 $1.6582 1000 $1.3908 10000 $1.3908	Buy Now

Find more 20N1 price and stock on Findchips.com

20N1 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
20N10	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N100	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
20N100D2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N100E2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N120E2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

20N1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IC IGBT 20N120 Abstract: 20n120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1 Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings	Original	20N120 20N120 O-247 IXDH20N120D1 IC IGBT 20N120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1	PDF
Untitled Abstract: No abstract text available Text: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient	Original	20N100 O-247 O-268	PDF
20N100 Abstract: No abstract text available Text: IGBT IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N100 O-220AB O-263 728B1	PDF
20n120 Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	20N120B 20N120BD1 IC110 O-220 6A/DSEC16-06A 20n120 induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes	PDF
IC IGBT 20N120 Abstract: IXDH20N120AU1 ixdh20n120au 20N120 Text: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW	Original	20N120 O-263 IXDH20N120AU1 IC IGBT 20N120 IXDH20N120AU1 ixdh20n120au	PDF
MDD25 Abstract: 255-16N1 MDD255 ixys MCC 700 Text: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol	Original	2x450 2x270 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 10Transient 20100203a MDD25 255-16N1 MDD255 ixys MCC 700	PDF
T1125 Abstract: No abstract text available Text: MDO 500 IFRMS = 880 A IFAVM = 560 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol 3 2 2 MDO 500-12N1 MDO 500-14N1 MDO 500-16N1 MDO 500-18N1 MDO 500-20N1 MDO 500-22N1 Test Conditions	Original	500-12N1 500-14N1 500-16N1 500-18N1 500-20N1 500-22N1 T1125	PDF
2x520 Abstract: No abstract text available Text: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions	Original	312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 2x520	PDF
20N15 Abstract: No abstract text available Text: Capacitive proximity sensors CFDM 20N1500/S35L Capacitive proximity sensors dimension drawing 20 35 9 3,5 22 10 12 4xLED M8 x 1 6 13 8,9 general data photo mounting type shielded nominal sensing distance Sn 5 mm temperature drift ± 15 % +10 . +70 °C	Original	20N1500/S35L 20N15	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	20N1501/S35L	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	20N1501/S35L	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	20N1501/S35L	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	20N1501/S35L	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N17A3/S35L Inductive proximity switch dimension drawing 10 LED 32 7 7 19 3,5 10 20 M8 x 1 13 general data photo mounting type shielded nominal sensing distance Sn 8 mm hysteresis 3 . 20 % of Sr output indicator LED red electrical data	Original	20N17A3/S35L	PDF

Untitled Abstract: No abstract text available Text: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient	Original	20N120B O-268 O-247 728B1 123B1 065B1	PDF
Untitled Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140	PDF
IXGH20N120BD1 Abstract: IXGH 20N120BD1 Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1	PDF
Untitled Abstract: No abstract text available Text: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol	Original	310-08N1 310-12N1 310-14N1 310-16N1 310-20N1 310-22N1	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N17A3/S35L Inductive proximity switch dimension drawing 10 LED 32 7 7 19 3,5 10 20 M8 x 1 13 general data photo mounting type flush nominal sensing distance Sn 8 mm hysteresis 3 . 20 % of Sr output indicator LED red electrical data	Original	20N17A3/S35L housi500Â	PDF
20N120D1 Abstract: IC IGBT 20N120 20n120 FII30-12E ISOPLUS247 Text: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.4 V in ISOPLUS247 C ISOPLUS247™ C G G G C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	20N120 20N120D1 ISOPLUS247TM 20080118a 20N120D1 IC IGBT 20N120 20n120 FII30-12E ISOPLUS247	PDF
Untitled Abstract: No abstract text available Text: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;	Original	255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 200-2200V E72873 20121206e	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information VCES IC25 VCE sat tfi(typ) IXGH 20N120 IXGT 20N120 IGBT High Voltage, Low VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM	Original	20N120 20N120 O-268 O-247 O-268AA	PDF
Untitled Abstract: No abstract text available Text: IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat IGBT = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N100 O-220AB O-263 728B1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	OCR Scan	MGW20N 120/D 20N120 MGW20N120/D	PDF

20N1 Search Results

20N1 Result Highlights (5)

20N1 Price and Stock

Vishay Siliconix SUD20N10-66L-GE3

onsemi NVH4L020N120SC1

Cal-Chip Electronics CHV2220N1K0102JCT

Cal-Chip Electronics CHV2220N1K0472JCT

Analog Devices Inc ADUM220N1BRWZ

20N1 Datasheets (5)

20N1 Datasheets Context Search

IC IGBT 20N120

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20N100

20n120

IC IGBT 20N120

MDD25

T1125

2x520

20N15

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IXGH20N120BD1

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20N120D1

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