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    20N1 Search Results

    20N1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP20N10YDF-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP20N10YDF-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    UPD120N15TA-A Renesas Electronics Corporation 3 Terminal Regulators, MM, / Visit Renesas Electronics Corporation
    UPD120N18T1B-E1-AZ Renesas Electronics Corporation 3 Terminal Regulators, POMM, / Visit Renesas Electronics Corporation
    UPD120N15TA-E1-A Renesas Electronics Corporation 3 Terminal Regulators, MM, / Visit Renesas Electronics Corporation
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    20N1 Price and Stock

    Suzhou Novosense Microelectronics Co Ltd NSI8220N1-DSPR

    2CH DGTL ISO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NSI8220N1-DSPR Reel 5,000 2,500
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    • 10000 $0.6421
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    NSI8220N1-DSPR Digi-Reel 5,000 1
    • 1 $2.26
    • 10 $1.451
    • 100 $0.9977
    • 1000 $0.74936
    • 10000 $0.74936
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    NSI8220N1-DSPR Cut Tape 5,000 1
    • 1 $2.26
    • 10 $1.451
    • 100 $0.9977
    • 1000 $0.74936
    • 10000 $0.74936
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    Diodes Incorporated AP2120N-1.8TRG1

    IC REG LINEAR 1.8V 150MA SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AP2120N-1.8TRG1 Reel 3,000 3,000
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    • 10000 $0.07324
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    Avnet Asia AP2120N-1.8TRG1 8 Weeks 9,000
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    • 10000 $0.04172
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    Avnet Silica AP2120N-1.8TRG1 276,000 10 Weeks 3,000
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    New Advantage Corporation AP2120N-1.8TRG1 198,000 1
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    • 10000 $0.0497
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    Cal-Chip Electronics CHV2220N1K0102KXT

    HVCAP2220 X7R 1000PF 10% 1KV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CHV2220N1K0102KXT Reel 1,000 500
    • 1 -
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    • 1000 $2.20275
    • 10000 $2.04024
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    CHV2220N1K0102KXT Cut Tape 1,000 1
    • 1 $5.28
    • 10 $3.574
    • 100 $2.6658
    • 1000 $2.6658
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    CHV2220N1K0102KXT Digi-Reel 1,000 1
    • 1 $5.28
    • 10 $3.574
    • 100 $2.6658
    • 1000 $2.6658
    • 10000 $2.6658
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    Cal-Chip Electronics CHV2220N1K0104KXT

    HVCAP2220 X7R .1UF 10% 1KV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CHV2220N1K0104KXT Cut Tape 497 1
    • 1 $1.62
    • 10 $1.028
    • 100 $0.7131
    • 1000 $0.7131
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    CHV2220N1K0104KXT Digi-Reel 497 1
    • 1 $1.62
    • 10 $1.028
    • 100 $0.7131
    • 1000 $0.7131
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    Littelfuse Inc IXFK320N17T2

    MOSFET N-CH 170V 320A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK320N17T2 Tube 365 1
    • 1 $27.86
    • 10 $27.86
    • 100 $19.784
    • 1000 $19.784
    • 10000 $19.784
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    Find more 20N1 price and stock on Findchips.com

    20N1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    20N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N100 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    20N100D2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N100E2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N120E2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    20N1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC IGBT 20N120

    Abstract: 20n120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1
    Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings


    Original     		PDF 20N120 20N120 O-247 IXDH20N120D1 IC IGBT 20N120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1

    Untitled

    Abstract: No abstract text available
    Text: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 20N100 O-247 O-268

    20N100

    Abstract: No abstract text available
    Text: IGBT IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N100 O-220AB O-263 728B1

    20n120

    Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 20N120B 20N120BD1 IC110 O-220 6A/DSEC16-06A 20n120 induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes

    IC IGBT 20N120

    Abstract: IXDH20N120AU1 ixdh20n120au 20N120
    Text: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW


    Original     		PDF 20N120 O-263 IXDH20N120AU1 IC IGBT 20N120 IXDH20N120AU1 ixdh20n120au

    MDD25

    Abstract: 255-16N1 MDD255 ixys MCC 700
    Text: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol


    Original     		PDF 2x450 2x270 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 10Transient 20100203a MDD25 255-16N1 MDD255 ixys MCC 700

    T1125

    Abstract: No abstract text available
    Text: MDO 500 IFRMS = 880 A IFAVM = 560 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol 3 2 2 MDO 500-12N1 MDO 500-14N1 MDO 500-16N1 MDO 500-18N1 MDO 500-20N1 MDO 500-22N1 Test Conditions


    Original     		PDF 500-12N1 500-14N1 500-16N1 500-18N1 500-20N1 500-22N1 T1125

    2x520

    Abstract: No abstract text available
    Text: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions


    Original     		PDF 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 2x520

    20N15

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFDM 20N1500/S35L Capacitive proximity sensors dimension drawing 20 35 9 3,5 22 10 12 4xLED M8 x 1 6 13 8,9 general data photo mounting type shielded nominal sensing distance Sn 5 mm temperature drift ± 15 % +10 . +70 °C


    Original     		PDF 20N1500/S35L 20N15

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red


    Original     		PDF 20N1501/S35L

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red


    Original     		PDF 20N1501/S35L

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red


    Original     		PDF 20N1501/S35L

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red


    Original     		PDF 20N1501/S35L

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensors IFFM 20N17A3/S35L Inductive proximity switch dimension drawing 10 LED 32 7 7 19 3,5 10 20 M8 x 1 13 general data photo mounting type shielded nominal sensing distance Sn 8 mm hysteresis 3 . 20 % of Sr output indicator LED red electrical data


    Original     		PDF 20N17A3/S35L

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 20N120B O-268 O-247 728B1 123B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140

    IXGH20N120BD1

    Abstract: IXGH 20N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1

    Untitled

    Abstract: No abstract text available
    Text: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol


    Original     		PDF 310-08N1 310-12N1 310-14N1 310-16N1 310-20N1 310-22N1

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensors IFFM 20N17A3/S35L Inductive proximity switch dimension drawing 10 LED 32 7 7 19 3,5 10 20 M8 x 1 13 general data photo mounting type flush nominal sensing distance Sn 8 mm hysteresis 3 . 20 % of Sr output indicator LED red electrical data


    Original     		PDF 20N17A3/S35L housi500Â

    20N120D1

    Abstract: IC IGBT 20N120 20n120 FII30-12E ISOPLUS247
    Text: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.4 V in ISOPLUS247 C ISOPLUS247™ C G G G  C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C


    Original     		PDF 20N120 20N120D1 ISOPLUS247TM 20080118a 20N120D1 IC IGBT 20N120 20n120 FII30-12E ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;


    Original     		PDF 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 200-2200V E72873 20121206e

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information VCES IC25 VCE sat tfi(typ) IXGH 20N120 IXGT 20N120 IGBT High Voltage, Low VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM


    Original     		PDF 20N120 20N120 O-268 O-247 O-268AA

    Untitled

    Abstract: No abstract text available
    Text: IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat IGBT = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N100 O-220AB O-263 728B1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    OCR Scan     		PDF MGW20N 120/D 20N120 MGW20N120/D