SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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MDD25
Abstract: 255-16N1 MDD255 ixys MCC 700
Text: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol
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2x450
2x270
255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
10Transient
20100203a
MDD25
255-16N1
MDD255
ixys MCC 700
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smd marking 911 zener
Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.
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M5263B,
ZMM5264B,
ZMM5265B,
ZMM5266B,
ZMM5267B,
ZMM56,
ZMM62,
ZMM68,
ZMM75,
smd marking 911 zener
d3g smd
NPN Transistor smd code LY 83
marking codes transistors a8 sot-23
TRANSISTOR SMD MARKING CODE s2a
1045ct mosfet
SOD-123 a18
W06* MARKING smd code
KBJ 3580
6045pt
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DIM1600FSM12-A000
Abstract: 6x transistor
Text: DIM1600FSM12-A000 DIM1600FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5533-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5533-3.0 March 2003
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DIM1600FSM12-A000
DS5533-2
DS5533-3
DIM1600FSM12-A000
6x transistor
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Untitled
Abstract: No abstract text available
Text: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Conditions
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2x450
2x270
255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
10Transient
20100203a
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Untitled
Abstract: No abstract text available
Text: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Symbol
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2x520
2x310
312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
10Transient
20100203a
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DIM1600FSM12-A000
Abstract: No abstract text available
Text: DIM1600FSM12-A000 DIM1600FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5533-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5533-3.0 March 2003
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DIM1600FSM12-A000
DS5533-2
DS5533-3
DIM1600FSM12-A000
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DIM1600FSM12-A000
Abstract: No abstract text available
Text: DIM1600FSM12-A000 DIM1600FSM12-A000 Single Switch IGBT Module Preliminary Information Replaces issue May 2002, version DS5533-1.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM1600FSM12-A000
DS5533-1
DS5533-2
DIM1600FSM12-A000
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312-22N1
Abstract: MDD312
Text: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Symbol
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2x520
2x310
312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
10Transient
20100203a
312-22N1
MDD312
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MDD312
Abstract: No abstract text available
Text: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM V VRRM VDRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1
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2x520
2x310
312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
10Transient
MDD312
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M8x20
Abstract: 25518N I101S MDD255 ixys mcc ixys mcc 255
Text: MDD 255 High Power Diode Modules VRSM VDSM V VRRM VDRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 1 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine
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2x450
2x270
255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
10Transient
M8x20
25518N
I101S
MDD255
ixys mcc
ixys mcc 255
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings
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OCR Scan
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IXFH/IXFT/IXFX14N100
IXFH/IXFT/IXFX15N100
14N100
15N100
O-247
to150
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26N80Q
Abstract: 26N80
Text: dIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q-Class Symbol Test Conditions Maximum Ratings VDSS Td = 25° C to 150° C 500 V Voon Tj = 25° C to 150°C; RGS= 1 MQ 500 V Vos Continuous ±20 V Transient ±30 V osm '* 5
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26N50Q
26N50Q
UL94V-0
10TransientThermal
26N80Q
26N80
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