Outline Dimensions
Abstract: No abstract text available
Text: Outline Dimensions Vishay Semiconductors DO-205AB DO-9 for 240U(R) Series DIMENSIONS in millimeters (inches) 19.2 (0.76) MAX. 4.2 ( 0.17 ) MA X. 23 (0.91) plone MIN. Ø 8.9 (0.35) Ø 8.4 (0.33) Ø 27.9 (1.1) MAX. 190 (7.48) MAX. SW 32 53.3 (2.1) MAX. 10 (0.39) MAX.
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DO-205AB
-16UNF-2A
02-Jul-08
Outline Dimensions
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Untitled
Abstract: No abstract text available
Text: S300BM R THRU S300YM(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 300A High Surge Capability Types Up to 1600V V RRM 300Amp Rectifier 100~1600 Volts Maximum Ratings DO-9(DO-205AB) Operating Temperature: -55 to Storage Temperature: -55
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S300BM
S300YM
300Amp
DO-205AB)
S300DM
S300EM
S300GM
S300JM
S300KM
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Outline Dimensions
Abstract: No abstract text available
Text: Outline Dimensions Vishay Semiconductors DO-205AB DO-9 DIMENSIONS in millimeters (inches) Ceramic housing 19 (0.75) MAX. 4 (0.16) MAX. 39 (1.53) MAX. 9.5 (0.37) MIN. DIA. 8.5 (0.33) NOM. C.S. 35 mm2 (0.054 s.i.) 210 (8.27) ± 10 (0.39) DIA. 27.5 (1.08) MAX.
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DO-205AB
-16UNF-2A*
09-Apr-08
Outline Dimensions
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DO-205AB, DO-9
Abstract: 95340 0749
Text: Outline Dimensions Vishay Semiconductors DO-205AB DO-9 and B-26 for 300U(R) Series DIMENSIONS FOR 300U(R)-A SERIES - DO-205AB (DO-9) in millimeters (inches) 4.32 19.18 (0.755) MAX. (0.1 MAX 70) . 11.51 (0.453) 10.74 (0.423) Ø 8.89 (0.350) Ø 8.38 (0.330)
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DO-205AB
-16UNF-2A
-24UNF-2A
-16UNF-2A
24-Jul-08
DO-205AB, DO-9
95340
0749
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Outline Dimensions
Abstract: No abstract text available
Text: Outline Dimensions Vishay Semiconductors DO-205AB DO-9 for 400U(R) Series DIMENSIONS in millimeters (inches) 19 (0.75) MAX. Glass-metal seal 4 (0. 16) M AX. 39 (1.53) MAX. 9.5 (0.37) MIN. Ø 8.5 (0.33) NOM. C.S. 35 mm² (0.054 s.i.) 200 ± 10 (7.87 ± 0.39)
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DO-205AB
-16UNF-2A
24-Jul-08
Outline Dimensions
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Untitled
Abstract: No abstract text available
Text: . , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 1N4052 Conform to JEDEC DO-205AB (DO-9) All dimensions In milllmetera (inches) Standard Rectifier (trr more than 500ns) GLASS-METAL SEAL
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1N4052
DO-205AB
500ns)
0V-1400V
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Untitled
Abstract: No abstract text available
Text: 400U R Series Vishay Semiconductors Standard Recovery Diodes (Stud Version), 400 A FEATURES • Wide current range RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version • Standard JEDEC types • RoHS compliant DO-205AB (DO-9)
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DO-205AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Penetrox A-13
Abstract: No abstract text available
Text: VISHAY SEMICONDUCTORS www.vishay.com Rectifiers Application Note Mounting Instructions for DO-205AA, DO-205AB, DO-205AC, and B-8 Stud Diodes by Kevin Liu This application note introduces Vishay´s DO-205AA DO-8 , DO-205AB (DO-9), DO-205AC (DO-30), and B-8 stud diodes
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DO-205AA,
DO-205AB,
DO-205AC,
DO-205AA
DO-205AB
DO-205AC
DO-30)
Penetrox A-13
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Outline Dimensions
Abstract: DO-205AB, DO-9 DO205AB DO-205AB 305u R305UR do-9 B41 vishay 301U 307u
Text: Outline Dimensions Vishay Semiconductors DO-205AB DO-9 , B-60, B-61, B-41, B-40 for 301U(R), 307U(R), 305U(R) and 309U(R) Series DIMENSIONS FOR 301U(R) SERIES - DO-205AB (DO-9) in millimeters (inches) 19 (0.75) MAX. Ceramic housing 24 (0.94) MAX. Ø 8.7 (0.34) MAX.
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DO-205AB
-16UNF-2A
22-Jul-08
-16UNF-2A
-24UNF-2A
Outline Dimensions
DO-205AB, DO-9
DO205AB
DO-205AB
305u
R305UR
do-9
B41 vishay
301U
307u
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2N3019
Abstract: JAN2N3700 2N3019S 2N3019S JAN
Text: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit
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2N3019,
2N3019S,
2N3700
MIL-PRF-19500/391
2N3019S
2N3019
JAN2N3700
2N3019S JAN
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2N2219
Abstract: No abstract text available
Text: 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/251 Qualified • Available as JAN, JANTX, and JANTXV 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic
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2N2219,
2N2219A,
2N2219AL
MIL-PRF-19500/251
205AB
2N2219A)
2N2219/D
2N2219
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Untitled
Abstract: No abstract text available
Text: 250NS R Naina Semiconductor emiconductor Ltd. Standard andard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted)
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250NS
DO-205AB
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Untitled
Abstract: No abstract text available
Text: 250NS R Naina Semiconductor emiconductor Ltd. Standard andard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted)
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250NS
DO-205AB
205AB
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2N4029
Abstract: No abstract text available
Text: 2N4029, 2N4033 Product Preview Small Signal Switching Transistor PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/512 Qualified • Available as JAN, JANTX, and JANTXV 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage
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2N4029,
2N4033
MIL-PRF-19500/512
2N4029
206AA
2N4029
205AB
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Untitled
Abstract: No abstract text available
Text: Naina Semiconductor emiconductor Ltd. 300NS R Standard andard Recovery Diodes (Stud and Flat Base Type), Type) 300A Features Diffused Series Industrial grade Available in Normal and Reverse polarity Metric and UNF thread type • • • • Electrical Specifications (TC = 25oC, unless otherwise noted)
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300NS
DO-205AB
205AB
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2n2219
Abstract: No abstract text available
Text: 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/251 Qualified • Available as JAN, JANTX, and JANTXV 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic
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2N2219,
2N2219A,
2N2219AL
2N2219/D
2n2219
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2N3019
Abstract: No abstract text available
Text: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit
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2N3019,
2N3019S,
2N3700
2N3019S
2N3019/D
2N3019
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ebonol
Abstract: 260-4TH5B ebonol c black 205cb AB-275 204-CB TUBE 1625 5 lead dd pak weight 260-6SH5B 205-CB
Text: Board Level Heat Sinks BOARD LEVEL POWER SEMICONDUCTOR HEAT SINKS 217 SERIES Surface Mount Heat Sinks D 2PAK, TO-220, SOT-223, SOL-20 Compatible with surface mount technology SMT automated production techniques for ease of assembly and a variety of soldering methods, these heat sinks allow greater packaging densities and reduction in PC-board area,
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O-220,
OT-223,
SOL-20
ebonol
260-4TH5B
ebonol c black
205cb
AB-275
204-CB
TUBE 1625
5 lead dd pak weight
260-6SH5B
205-CB
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IN3738
Abstract: IN2064 1n2054
Text: Diodes international IQ R Rectifier . VM M Part Number V *F A V @ t C fm (A) (V) (C) @ lfM Fax on Case Demand Outline Number Key 1FSM 50 H? 60H: R QIC(DC) (A) (A) (A) (“C/W) Notes Standard Recovery DO-205AB (DO-9) 50 100 100 200 200 300 300 400 400 500
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DO-205AB
1N2054
1N3735
IN2055
IN2057
IN3736
IN2059
1N3737
IN3738
1N206I
IN2064
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D300N
Abstract: vfm 330
Text: International IC2R Rectifier Diodes Standard Recovery 300U120AD 1200 300 130 1.4 942 5500 5750 0,18 9 12 17 18 82031 3 0 0 U Í6 0 A D 1600 300 130 1.4 942 5500 5750 0.18 9 12 17 18 82031 R19 DO-205AB 00-9 2500 301U250 3 0 IU 8 0 3 0 IU Ï2 0 300 1.46 120
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300U120AD
DO-205AB
301U250
N28PC
0R08PCI
12FR1
6F10M,
SD600N08MC
152L5A.
D300N
vfm 330
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k 942
Abstract: 7OU100
Text: International Iö R Rectifier Diodes Fax 'FÎM Port Number VRRM If a v @ t C V (A) (C) ^FM @ I FM (V) (A) 50 Hi (A) 60Hz (A) on Case Demand Outline Number Key k OIC(DC) (°C/W) Notes Standard Recovery DO-205AB (DO-9) 7OU10 100 250 145 1.3 -85 5500 5750 0. 8
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DO-205AB
7OU10
70U40
70U60
70U80
7OU100
300U20A
300U80A
SD600R06PC)
12FR1Q0
k 942
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IN4048
Abstract: IN4045 4800 IN4046
Text: International I0R Rectifier 5 H t r s N A ' y ¡ a *rT f ft Diodes ANM iV EiiAR r -4 ’ Standard Recovery DO-205AB DO-9 IN4044 50 275 120 1.35 865 4800 5000 0.18 5 12 17 20091 IN4045 100 275 120 1.35 865 4800 5000 0.18 5 Î2 17 20091 IN4046 150 275 120
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DO-205AB
IN4044
IN4045
IN4046
1N4047
IN4048
1N4049
1N4050
1N4052
1N4053
4800
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Untitled
Abstract: No abstract text available
Text: International IO R Rectifier Fast Recovery Diodes Fax on 1psM Part VRRM V Number * fav@ tc (A) (C) SO Hz (A) 60HI Vf* @ , f * R JC (A) (V) (A) (°C/W) •„ (nS) Notes Number Case Outline Key Discrete DO-205AB (DO-9) SD 2 0 3 N 0 4 SIO P V 400 200 85 4200
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DO-205AB
20S20PC
25S20PC
251UL160S15
IRD3099R4OHFLR1O5O2)
40FL10S02M)
00A/gs,
VR-30V
30Apk.
60Apk.
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82081
Abstract: 7270 d300n
Text: Diodes International I R Rectifier S f ^ 1 FS M Port Number V RW« 00 'fa V @ t C W Q (V (A) SO Hz (A) 0X 6OH1 (A) RQIC(DC) (°C/W) C a je Demand Outline Number Key Notes Standard Recovery DO-205AB (DO-9) S D 400N 20P C 2000 400 120 1.62 1500 6940 7270
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DO-205AB
5D600R08PC)
12FR100
6F10M,
SD60DN08MC
152L5A.
1N3288
DO-30
82081
7270
d300n
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