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    Kyocera AVX Components 200B103MW50XT1K

    CAP CER 10000PF 50V BX 1111
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    DigiKey 200B103MW50XT1K Digi-Reel 1,220 1
    • 1 $5.36
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    200B103MW50XT1K Cut Tape 1,220 1
    • 1 $5.36
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    200B103MW50XT1K Reel 1,000 1,000
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    Mouser Electronics 200B103MW50XT1K
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    Richardson RFPD 200B103MW50XT1K 1,000
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    Kyocera AVX Components 200B103MW50XC100

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Mouser Electronics 200B103MW50XC100
    • 1 $4.4
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    Richardson RFPD 200B103MW50XC100 200
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    Kyocera AVX Components 200B103MWN50XC100

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Mouser Electronics 200B103MWN50XC100
    • 1 $5.09
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    Kyocera AVX Components 200B103MW50XTV

    Silicon RF Capacitors / Thin Film 50V 0.01uF Tol 20% Las Mkg Vertical
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    Kyocera AVX Components 200B103MW50XT

    Silicon RF Capacitors / Thin Film 50V .01uF 20% SMD/SMT
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    Richardson RFPD 200B103MW50XT 500
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    Find more 200B103MW price and stock on Findchips.com

    200B103MW Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    200B103MW50XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10000PF 50V BX 1111 Original PDF
    200B103MW50XT1K American Technical Ceramics Ceramic Capacitor 10000PF 50V BX 1111 Original PDF

    200B103MW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1

    167D

    Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
    Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100


    Original     		PDF TB167D 30-512MHz 28Vdc LQ801 LB501A 28Vdc, 0R0J12AFX 167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener

    TB222

    Abstract: PH smd transistor PH
    Text: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W


    Original     		PDF TB222A 1-1000MHz 48Vdc GX141 2N1893 U5305 MAX881 100nF MIC7300 TB222 PH smd transistor PH

    Untitled

    Abstract: No abstract text available
    Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

    TB223

    Abstract: amidon BN-61-202
    Text: June 22, 2012 TB223 Frequency=20-35MHz Pout=30W Gain=17dB Vds=24Vdc Idq=0.4A Efficiency=30 to 58% L2701 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com June 22, 2012 TB223 Pout/Gain vs Pin: Freq=20 MHz, Vds=24Vdc, Idq=0.4A


    Original     		PDF TB223 20-35MHz 24Vdc L2701 TB223 24Vdc, 17-turn, 850mu amidon BN-61-202

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P20180HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P20180HR6

    TAJE226M035

    Abstract: 200B103MW
    Text: Freescale Semiconductor Technical Data Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P20180HR6 TAJE226M035 200B103MW

    Untitled

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091503EL PTFA091503EL 150-watt, H-33288-6

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801

    rogers

    Abstract: No abstract text available
    Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210451 PTF210451 rogers

    marking Z4

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 marking Z4 A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    TB224

    Abstract: D02BZ2 Amidon ferrite
    Text: October 31, 2012 TB224 Frequency=30-512MHz Pout=1.5W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=13-18% SP201 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com October 31, 2012 TB224 Pout/Gain vs Pin: Freq=30MHz, Vds=28Vdc, Idq=0.2A


    Original     		PDF TB224 30-512MHz 28Vdc SP201 TB224 30MHz, 28Vdc, 250MHz, D02BZ2 Amidon ferrite

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P20180HR6 MRF5P20180HR6

    TRANSISTOR tl131

    Abstract: No abstract text available
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PDF PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131

    PTF210451E

    Abstract: PTF210451F 200B1
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.


    Original     		PDF PTF210451E PTF210451F PTF210451E PTF210451F 45-watt 200B1

    200B

    Abstract: AN1955 MRF5P20180HR6
    Text: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P20180HR6 200B AN1955 MRF5P20180HR6

    Untitled

    Abstract: No abstract text available
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF210451E PTF210451F 45-watt PTF210451F*

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1 Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MBR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA Replaced by MRF5P20180HR6. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line MRF5P20180R6 RF Power Field Effect Transistor 1990 MHz, 38 W AVG.,


    Original     		PDF MRF5P20180/D MRF5P20180HR6. MRF5P20180R6 Channel2003

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080N

    capacitor 2220

    Abstract: 200B A113 AN1955 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 MRF5S9101NR1 murata 897 Mhz
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1


    Original     		PDF MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 capacitor 2220 200B A113 AN1955 MRF5S9101MBR1 murata 897 Mhz

    200B103MW

    Abstract: 100B5R6CW
    Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 200B103MW 100B5R6CW