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    200B1 Search Results

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    200B1 Price and Stock

    Infineon Technologies AG ESD200B1CSP0201XTSA1

    TVS DIODE 5.5VWM 13VC
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    DigiKey ESD200B1CSP0201XTSA1 Cut Tape 76,712 1
    • 1 $0.1
    • 10 $0.064
    • 100 $0.1
    • 1000 $0.022
    • 10000 $0.0205
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    ESD200B1CSP0201XTSA1 Digi-Reel 76,712 1
    • 1 $0.1
    • 10 $0.064
    • 100 $0.1
    • 1000 $0.022
    • 10000 $0.0205
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    ESD200B1CSP0201XTSA1 Reel 45,000 15,000
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    Rochester Electronics ESD200B1CSP0201XTSA1 6,390,000 1
    • 1 $0.0219
    • 10 $0.0219
    • 100 $0.0206
    • 1000 $0.0186
    • 10000 $0.0186
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    EBV Elektronik ESD200B1CSP0201XTSA1 17 Weeks 15,000
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    IBS Electronics ESD200B1CSP0201XTSA1 15,000
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    Vyrian ESD200B1CSP0201XTSA1 1,073,698
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    KOA Speer Electronics Inc RN73H1JTTD8200B10

    RES 820 OHM 0.1% 1/10W 0603
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    DigiKey RN73H1JTTD8200B10 Cut Tape 3,940 1
    • 1 $1.05
    • 10 $0.735
    • 100 $0.4994
    • 1000 $0.34375
    • 10000 $0.34375
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    Kyocera AVX Components 200B103MW50XT1K

    CAP CER 10000PF 50V BX 1111
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    DigiKey 200B103MW50XT1K Digi-Reel 2,061 1
    • 1 $5.04
    • 10 $3.641
    • 100 $5.04
    • 1000 $5.04
    • 10000 $5.04
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    200B103MW50XT1K Cut Tape 2,061 1
    • 1 $5.04
    • 10 $3.641
    • 100 $5.04
    • 1000 $5.04
    • 10000 $5.04
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    200B103MW50XT1K Reel 2,000 1,000
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    • 1000 $2.52979
    • 10000 $2.52979
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    Richardson RFPD 200B103MW50XT1K 1,000
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    • 1000 $1.95
    • 10000 $1.76
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    Kyocera AVX Components 200B103KTN50XT1K

    CAP CER 10000PF 50V BX 1111
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    DigiKey 200B103KTN50XT1K Reel 2,000 1,000
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    • 1000 $2.91424
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    Avnet Americas 200B103KTN50XT1K Tape w/Leader 24 Weeks 1,000
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    • 10000 $3.887
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    Richardson RFPD 200B103KTN50XT1K 1,000
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    • 1000 $2.48
    • 10000 $2.1
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    Eaton Bussmann NRCE102K3200B1KS

    THERMISTOR 100 OHM 3200 BETA
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    DigiKey NRCE102K3200B1KS Bulk 1,934 1
    • 1 $0.24
    • 10 $0.24
    • 100 $0.1624
    • 1000 $0.13798
    • 10000 $0.12474
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    Newark NRCE102K3200B1KS Bulk 2,000 1
    • 1 $0.209
    • 10 $0.145
    • 100 $0.125
    • 1000 $0.125
    • 10000 $0.125
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    200B1 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    200B103KT50XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10000PF 50V BX 1111 Original PDF
    200B103KT50XT1K American Technical Ceramics Ceramic Capacitor 10000PF 50V BX 1111 Original PDF
    200B103KTN50XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10000PF 50V BX 1111 Original PDF
    200B103KTN50XT1K American Technical Ceramics Ceramic Capacitor 10000PF 50V BX 1111 Original PDF
    200B103MT50XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10000PF 50V BX 1111 Original PDF
    200B103MT50XT1K American Technical Ceramics Ceramic Capacitor 10000PF 50V BX 1111 Original PDF
    200B103MW50XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10000PF 50V BX 1111 Original PDF
    200B103MW50XT1K American Technical Ceramics Ceramic Capacitor 10000PF 50V BX 1111 Original PDF
    200B104KT50XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 0.1UF 50V BX 1111 Original PDF
    200B104KT50XT1K American Technical Ceramics Ceramic Capacitor 0.1UF 50V BX 1111 Original PDF
    200B104MT50XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 0.1UF 50V BX 1111 Original PDF
    200B104MT50XT1K American Technical Ceramics Ceramic Capacitor 0.1UF 50V BX 1111 Original PDF
    200B12HA Acme Electric Over 600 obsolete distributor catalogs now available on the Datasheet Archive - LINEAR POWER SUPPLY, 12.5VDC, 15.0A Scan PDF

    200B1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    7427 pin configuration

    Abstract: No abstract text available
    Text: O K I Semiconductor MTC821M216-xxOBI Static R A M GENERAL DESCRIPTION The MTC821M216-150B1 and MTC821M216-200B1 are 1.25M bytes static RAM cards in confor­ mity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.


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    MTC821M216-xxOBI MTC821M216-150B1 MTC821M216-200B1 68pins CR2025 7427 pin configuration PDF

    MTC8201M16-200B1

    Abstract: MTC8201
    Text: O K I Semiconductor M TC8201M 16-XX0B1 Static RAM GENERAL DESCRIPTION The MTC8201M16-150B1 and MTC8201M16-200B1 are 1M bytes static RAM cards in conformity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.


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    TC8201M 16-XX0B1 MTC8201M16-150B1 MTC8201M16-200B1 68pins CR2025 MTC8201 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M TC 8225716-xxOB1 Static RAM GENERAL DESCRIPTION TheMTC8225716-150Bl and MTC8225716-200B1 are 256Kbytes static RAM cards in conformity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.


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    8225716-xxOB1 TheMTC8225716-150Bl MTC8225716-200B1 256Kbytes 68pins CR2025 1S96G PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON CLP30-200B1 m Application Specific Discretes A.S.D. O VERVO LTAG E AND O VERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards


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    CLP30-200B1 CLP30-200B1 PDF

    tip 220

    Abstract: CLP200M CLP30-200B1 LCP1511D VDE0433 VDE0878
    Text: CLP30-200B1 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : Analog and ISDN line cards PABX DESCRIPTION


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    CLP30-200B1 CLP30-200B1 tip 220 CLP200M LCP1511D VDE0433 VDE0878 PDF

    CLP200M

    Abstract: CLP30-200B1 LCP1511D VDE0433 VDE0878
    Text: CLP30-200B1 Application Specific Discretes A.S.D OVERVOLTAGE & OVERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards ■ PABX


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    CLP30-200B1 CLP30-200B1 CLP200M LCP1511D VDE0433 VDE0878 PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET BNC 50 Ω BULKHEAD JACK SOLDER END 51K516-200B1 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-8, MIL-PRF-39012, CECC 22120 Documents Panel piercing B2 Material and plating RF_35/12.04/3.0


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    51K516-200B1 MIL-PRF-39012, D-84526 PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET BNC 50 Ω BULKHEAD JACK SOLDER END 51K516-200B1 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-8, MIL-PRF-39012, CECC 22120 Documents Panel piercing B2 Material and plating RF_35/12.04/3.0


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    51K516-200B1 MIL-PRF-39012, D-84526 PDF

    CLP200M

    Abstract: No abstract text available
    Text: CLP30-200B1  Application Specific Discretes A.S.D OVERVOLTAGE & OVERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards ■ PABX


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    CLP30-200B1 CLP30-200B1 CLP200M PDF

    CLP30-200B1RL

    Abstract: No abstract text available
    Text: CLP30-200B1 ASD Application Specific Devices Overvoltage and overcurrent protection for telecom line Features • ■ ■ ■ Dual bidirectional protection device High peak pulse current: – IPP = 40 A (5/310 µs surge) – IPP = 30 A (10/1000 µs surge)


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    CLP30-200B1 CLP30-200B1 CLP30200B1 CLP30-200B1RL PDF

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet - Draft RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG 4.3-10 Panel Jack 64K401-200B1 All dimensions are in mm; tolerances according to ISO 2768 m-H


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    64K401-200B1 61169-xx D-84526 18-ht PDF

    Untitled

    Abstract: No abstract text available
    Text: 200B1R CONNECTOR SYSTEM .079” 2.0mm pitch board-in right-angle type WIRE RANGE PART NO. 200B1R-T MATERIAL/ THICKNESS INSULATION REEL AWG# mm2 FINISH mm O.D.(mm) PCS 24-30 0.2-0.06 BRASS/TIN 0.20 1.5-0.8 10000 200B1R-H SERIES HOUSING MATERIAL : NYLON 66 UL 94V-0


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    200B1R 200B1R-T 200B1R-H 200B1R-T 1000M 200B1R-H02 200B1R-H10 200B1R-H03 PDF

    ptc overvoltage protections application note

    Abstract: CLP30-200B1 CLP30-200B1RL MM1315
    Text: CLP30-200B1 ASD Application Specific Devices Overvoltage and overcurrent protection for telecom line Features • ■ ■ ■ Dual bidirectional protection device High peak pulse current: – IPP = 40 A (5/310 µs surge) – IPP = 30 A (10/1000 µs surge)


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    CLP30-200B1 CLP30-200B1 CLP30200B1 ptc overvoltage protections application note CLP30-200B1RL MM1315 PDF

    MTC62

    Abstract: MTC821
    Text: O K I Semiconductor MTC821M516-xxOBI Static RAM G E N E R A L DESCRIPTION The MTC821M51éi-150Bl and MTC821M516-200B1 are 1.5M bytes static RAM cards in confor­ mity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.


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    MTC821M516-xxOBI MTC821M51 i-150Bl MTC821M516-200B1 68pins CR2025 MTC62 MTC821 PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET BNC 50 Ω BULKHEAD JACK SOLDER END 51K516-200B1 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-8, MIL-PRF-39012, VG 95200, CECC 22120 Documents Panel piercing B2 Material and plating RF_35/12.04/3.0


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    51K516-200B1 MIL-PRF-39012, D-84526 PDF

    Untitled

    Abstract: No abstract text available
    Text: 200B1 CONNECTOR SYSTEM .079” 2.0mm pitch board-in type WIRE RANGE PART NO. 200B1-T MATERIAL/ THICKNESS INSULATION REEL AWG# mm2 FINISH mm O.D.(mm) PCS 24-30 0.22-0.05 BRASS/TIN 0.20 1.5-0.8 10000 200B1-H SERIES HOUSING MATERIAL : NYLON 66 UL 94V-0 ACCEPT 200B1-T TERMINAL


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    200B1 200B1-T 200B1-H 200B1-T 1000M 200B1-H02 200B1-H09 200B1-H0M PDF

    static ram 512K

    Abstract: No abstract text available
    Text: O K I Semiconductor M T C 8 2 5 1 3 1 6 -xxO BI Static RAM GENERAL DESCRIPTION The MTC8251316-150B1 and MTC8251316-200B1 are 512Kbytes static RAM cards in conformity w ith the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.


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    MTC8251316-150B1 MTC8251316-200B1 512Kbytes 68pins CR2025 I03fj static ram 512K PDF

    Toshiba 1SV186 varactor

    Abstract: FET J133 1SV186 adc20013 J242 c965 1SV245 varactor capacitor diode Lowpass Filter 3 GHz 950-2050
    Text:  ADC20013 Broadcast Satellite Tuner MMIC Rev 0 INTRODUCTION The ADC20013 downconverter is intended for use in the indoor receiver portion of the DBS Direct Broadcast Satellite System. ANADIGICS' 0.5 µm. depletion-mode GaAs process is used to fabricate this device. The chip downconverts inputs in the 950-2050 MHz band


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    ADC20013 ADC20013 100pF 100KHz Toshiba 1SV186 varactor FET J133 1SV186 J242 c965 1SV245 varactor capacitor diode Lowpass Filter 3 GHz 950-2050 PDF

    J294

    Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to


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    MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


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    MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1 PDF

    167D

    Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
    Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100


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    TB167D 30-512MHz 28Vdc LQ801 LB501A 28Vdc, 0R0J12AFX 167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener PDF

    TB222

    Abstract: PH smd transistor PH
    Text: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W


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    TB222A 1-1000MHz 48Vdc GX141 2N1893 U5305 MAX881 100nF MIC7300 TB222 PH smd transistor PH PDF

    transistor GT 1081

    Abstract: MRFG35010AR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


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    MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5 PDF

    Untitled

    Abstract: No abstract text available
    Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


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    MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 PDF