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    PTF210451F Search Results

    PTF210451F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTF210451F Infineon Technologies 2100 MHz to 2200 MHz; Package: PG: H-31265-2; Flange Type: Earless; Matching: I/O; Frequency Band: 2,010.0 - 2,170.0 MHz; P1dB (typ): 45.0 W; Supply Voltage: 28.0 V; Original PDF
    PTF210451F V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 45W H-31265-2 Original PDF
    PTF210451FV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 45W H-31265-2 Original PDF

    PTF210451F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PTF210451E

    Abstract: PTF210451F 200B1
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.


    Original     		PDF PTF210451E PTF210451F PTF210451E PTF210451F 45-watt 200B1

    Untitled

    Abstract: No abstract text available
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF210451E PTF210451F 45-watt PTF210451F*

    BDS31314

    Abstract: PTF210451E PTF210451F
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF210451E PTF210451F PTF210451E PTF210451F 45-watt PTF210451F* BDS31314

    Untitled

    Abstract: No abstract text available
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.


    Original     		PDF PTF210451E PTF210451F 45-watt H-30265-2 PTF210451F* H-31265-2

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PDF PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PDF PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503