Untitled
Abstract: No abstract text available
Text: THIRD ANGLE PROJECTION I ALTERATION [け 1 Ih，1 ，1， 11 Ih， r i_l 山 いl DATE Apr . 1 2012 Apr . 1 2 13 ム 1Company name changed ムl 川C om 州山 l E t t t ， ¥ I E 掠 コ = SYMBOL j 0r K _tl~1i;jι 二月中~ 一 ~ ; Jp j ITEM C O D E NUMBER
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10123ROFI
H10153ROFI
H10183R
H10223ROFI
H10273R
H10333ROFI
H10393ROFI
H10473R
H10563ROFI
H10683ROFI
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Untitled
Abstract: No abstract text available
Text: UG532V7244HK S G Data sheets can be downloaded at www.unigen.com 256M Bytes (32M x 72 bits) FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 16M x 4 DRAM with LVTTL, 4K Refresh PIN ASSIGNMENT (Front View) 168-Pin DIMM FEATURES • • •
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UG532V7244HK
2000mil)
168-Pin
UG532V7244HKG
UG532V7244HSG
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Untitled
Abstract: No abstract text available
Text: UG064D6388KX Data sheets can be downloaded at www.unigen.com 512M Bytes 64M x 64 bits SYNCHRONOUS DRAM MODULE 200 Pin DDR SDRAM Unbuffered SODIMM w/PLL based on 16 pcs 32M x 8 DDR SDRAM 8K Refresh FEATURES • • • • • • • PIN ASSIGNMENT (Front View)
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UG064D6388KX
200-Pin
66Pin
D0-D15
D0-D15
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Untitled
Abstract: No abstract text available
Text: UG0128D6388LX Data sheets can be downloaded at www.unigen.com 1G Bytes 128M x 64 bits SYNCHRONOUS DRAM MODULE 200 Pin DDR SDRAM Unbuffered SODIMM w/PLL based on 16 pcs 64M x 8 DDR SDRAM 8K Refresh FEATURES • • • • • • • PIN ASSIGNMENT (Front View)
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UG0128D6388LX
200-Pin
66Pin
A0-A12:
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DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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K4F640411CJ
Abstract: No abstract text available
Text: DRAM MODULE M372C320 8 0CJ0-C Buffered 32Mx72 DIMM (16Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M372C320(8)0CJ0-C DRAM MODULE M372C320(8)0CJ0-C
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M372C320
32Mx72
16Mx4
16Mx4,
32Mx72bits
K4F640411CJ
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kb3926
Abstract: kb3926 d3 MAX8774 MCP67D Maxim MAX8774 kb3920 short stop 12v p18 30a kb3926 d2 ac30 c51 100v 10p quanta at1
Text: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2
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Turion64
5W/35W
667mhz
667mhz
NB8M-64bit
RJ-45
PC112
330U/2V/9m
330U/2V/9m
kb3926
kb3926 d3
MAX8774
MCP67D
Maxim MAX8774
kb3920
short stop 12v p18 30a
kb3926 d2
ac30 c51 100v 10p
quanta at1
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Untitled
Abstract: No abstract text available
Text: EN25S80B EN25S80B 8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • • • - Single power supply operation Full voltage range: 1.65-1.95 volt Serial Interface Architecture SPI Compatible: Mode 0 and Mode 3 8 M-bit Serial Flash 8 M-bit / 1024 KByte /4096 pages
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EN25S80B
104MHz
1024K
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Untitled
Abstract: No abstract text available
Text: UG064D6388KX Data sheets can be downloaded at www.unigen.com 512M Bytes 64M x 64 bits SYNCHRONOUS DRAM MODULE 200 Pin DDR SDRAM Unbuffered SODIMM w/PLL based on 16 pcs 32M x 8 DDR SDRAM 8K Refresh FEATURES • • • 200-Pin SODIMM C O N FI D EN TI AL •
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UG064D6388KX
200-Pin
64ms/8K)
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Untitled
Abstract: No abstract text available
Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8
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UG08E14488HSG-6
200Pin
U08E14488HSG-6
400mil
16bit
240mil
2000mil)
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372V320 8 0BK4 KMM372V320(8)0BK4 Fast Page Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V320(8)0B is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V320(8)0B consists of thirty-six CMOS 16Mx4bits
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KMM372V320
16Mx4,
32Mx72bits
16Mx4bits
400mil
168-pin
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MIPF2520D2R2
Abstract: EMK212BJ475K GRM21BR61C475K
Text: 19-4905; Rev 0; 8/09 MAX8884 Evaluation Kit The MAX8884 evaluation kit EV kit is a fully assembled and tested PCB that demonstrates the highly integrated MAX8884Y step-down DC-DC converter and dual, 300mA, low-dropout (LDO) linear regulator. The stepdown output voltage is pin selectable between 1.2V
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MAX8884
MAX8884Y
300mA,
700mA.
MAX8884Y/MAX8884Z.
MAX8884Z.
MAX8884Z,
GRM188R61C225K
MIPF2520D2R2
EMK212BJ475K
GRM21BR61C475K
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IC 1458
Abstract: KMM372V3200CK4 KMM372V3280CK4
Text: DRAM MODULE KMM372V320 8 0CK4 KMM372V320(8)0CK4 Fast Page Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V320(8)0C is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V320(8)0C consists of thirty-six CMOS 16Mx4bits
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KMM372V320
16Mx4,
32Mx72bits
16Mx4bits
400mil
168-pin
IC 1458
KMM372V3200CK4
KMM372V3280CK4
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Untitled
Abstract: No abstract text available
Text: KMM372F320 8 0CK4 DRAM MODULE KMM372F320(8)0CK4 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0CK4 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0CK4 consists of thirty-six CMOS 16Mx4bits
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KMM372F320
16Mx4,
32Mx72bits
16Mx4bits
400mil
168-pin
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AR S1 78
Abstract: No abstract text available
Text: UG0128D6388LX Data sheets can be downloaded at www.unigen.com 1G Bytes 128M x 64 bits SYNCHRONOUS DRAM MODULE 200 Pin DDR SDRAM Unbuffered SODIMM w/PLL based on 16 pcs 64M x 8 DDR SDRAM 8K Refresh FEATURES • • • 200-Pin SODIMM C O N FI D EN TI AL •
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UG0128D6388LX
200-Pin
64ms/8K)
AR S1 78
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C1005X7R1C
Abstract: AU-Y1007-R MAX3378EETD C1608X5R MAX3373EEKA GRM155R71E333K AU-Y1007 ftd2xx C1005X7 C1005X7R1C104
Text: 19-5345; Rev 0; 7/10 MAX8649 Evaluation Kit The MAX8649 evaluation kit EV kit is a fully assembled and tested circuit for evaluating the MAX8649 1.8A stepdown regulator. The EV kit operates from a 2.5V to 5.5V supply voltage and outputs a voltage programmable
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MAX8649
750mV
25MHz
13MHz,
26MHz
MAX8649
2000MILS
C1005X7R1C
AU-Y1007-R
MAX3378EETD
C1608X5R
MAX3373EEKA
GRM155R71E333K
AU-Y1007
ftd2xx
C1005X7
C1005X7R1C104
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Untitled
Abstract: No abstract text available
Text: UG032D7388KX Data sheets can be downloaded at www.unigen.com 256M Bytes 32M x 72 bits SYNCHRONOUS DRAM MODULE 200 Pin DDR SDRAM ECC Unbuffered SODIMM w/PLL based on 9 pcs 32M x 8 DDR SDRAM 8K Refresh FEATURES • • • • • • • PIN ASSIGNMENT (Front View)
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UG032D7388KX
200-Pin
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Untitled
Abstract: No abstract text available
Text: UG0128D7388LX Data sheets can be downloaded at www.unigen.com SYNCHRONOUS DRAM MODULE 1G Bytes 128M x 72 bits 200 Pin DDR SDRAM ECC Unbuffered SODIMM w/PLL based on 18 pcs 64M x 8 DDR SDRAM 8K Refresh FEATURES PIN ASSIGNMENT (Front View) Quad internal banks operation
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UG0128D7388LX
200-Pin
2000mil)
Re-Tek-1019
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Untitled
Abstract: No abstract text available
Text: UG532V7244HK S G-6 Revision History Feb 13 , 2003 Datasheet released. U N IG EN C O N FI D EN TI AL Pr el im in ar y Rev - A 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: (510) 668-2088 Fax: (510) 661-2788 support@unigen.com Re-Tek- 341_MT UG532V7244HK(S)G-6
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UG532V7244HK
168Pin
32pin
ABT163244
240mil
168-pin
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Untitled
Abstract: No abstract text available
Text: UG064D7388KX Data sheets can be downloaded at www.unigen.com SYNCHRONOUS DRAM MODULE 512M Bytes 64M x 72 bits 200 Pin DDR SDRAM ECC Unbuffered SODIMM w/PLL based on 18 pcs 32M x 8 DDR SDRAM 8K Refresh FEATURES • • • • • • • PIN ASSIGNMENT (Front View)
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UG064D7388KX
200-Pin
66Pin
D0-D17
D0-D17
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Quanta AT8
Abstract: quanta u36 max8774 MCP51 MAX8774 AMD socket s1 C51M CX20549 max8774 pwm Samsung R418 kb3920
Text: 1 2 PCB STACK UP LAYER 1 : TOP RUN POWER SW LAYER 2 : SGND1 A 3 4 AC/BATT CONNECTOR PG 36,37 BATT CHARGER LAYER 3 : IN1 5 6 PG 38 PG 34 DC/DC +3VSUS +5VSUS LAYER 4 : IN2 DDRII 667mhz DDRII-SODIMM1 LAYER 5 : VCC PG 5 LAYER 7 : SGND2 DDRII 667mhz HT Link PCI-E
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Turion64
5W/35W
667mhz
667mhz
RJ-45
C51M/D
PCIPR231
8774LX2
SI7636DP-T1-E3
8774DL2
Quanta AT8
quanta u36 max8774
MCP51
MAX8774
AMD socket s1
C51M
CX20549
max8774 pwm
Samsung R418
kb3920
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KM44V16104AK
Abstract: samsung dram
Text: KMM372F3200AK2 DRAM Module ELECTRONICS KMM372F3200AK2/AS2 & KMM372F3280AK2/AS2 Fast Page with EDO 32Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The
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KMM372F3200AK2
KMM372F3200AK2/AS2
KMM372F3280AK2/AS2
32Mx72
16Mx4,
KMM372F320
16Mx4bit
400mil
48pin
KM44V16104AK
samsung dram
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CACP
Abstract: No abstract text available
Text: DRAM M ODULE KM M 372C32 0 8 0 B K Buffered 32Mx72 DIMM (16Mx4 base) Revision 0.0 Sept. 1997 DRAM M ODULE KM M 372C32 0( 8 ) 0 B K Revi si on Hi st or y Version 0.0 (Sept, 1 997) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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372C32
32Mx72
16Mx4
16Mx4,
KMM372C320
32Mx72bits
16Mx4bits
CACP
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tc 144 e
Abstract: No abstract text available
Text: DRAM MODULE KMM372E320 8 0BK KMM372E320(8)0BK EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E320(8)0B is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E320(8)0B consists of thirty-six CMOS 16Mx4bits
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KMM372E320
16Mx4,
32Mx72bits
16Mx4bits
400mil
168-pin
tc 144 e
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