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    2 GHZ BJT Search Results

    2 GHZ BJT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DC753A Analog Devices LT5526EUF - 1MHz-2GHz Mixer Visit Analog Devices Buy
    DC945A Analog Devices LT5572EUF - 2GHz I/Q Modulator Visit Analog Devices Buy
    LTC5549IUDB#TRPBF Analog Devices 2GHz to 14GHz Microwave Mixer Visit Analog Devices Buy
    LTC5548IUDB#TRPBF Analog Devices 2GHz to 14GHz Microwave Mixer Visit Analog Devices Buy
    LTC5549IUDB#TRMPBF Analog Devices 2GHz to 14GHz Microwave Mixer Visit Analog Devices Buy
    LTC5548IUDB#TRMPBF Analog Devices 2GHz to 14GHz Microwave Mixer Visit Analog Devices Buy

    2 GHZ BJT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SUF-6000 SUF-6000 2 GHz to 16 GHz Broadband pHEMT Amplifier 2 GHz to 16 GHz BROADBAND pHEMT AMPLIFIER Package Style: 1.80 mm x 0.88 mm Product Description Features RFMD’s SUF-6000 is a high gain broadband 2-stage amplifier covering 2 GHz to 16 GHz for wideband communication and general purpose applications. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active


    Original     		PDF SUF-6000 SUF-6000 DS090605

    az 2732 132

    Abstract: 2SC5507 NE661M04 NE661M04-T2-A S21E max10022
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 az 2732 132 2SC5507 NE661M04-T2-A S21E max10022

    BJT BF 331

    Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 24-Hour BJT BF 331 mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE68018

    ua 722 fc

    Abstract: 2SC5507 NE661M04 NE661M04-T2 S21E max10022
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 ua 722 fc 2SC5507 NE661M04-T2 S21E max10022

    2SC3583

    Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 24-Hour 2SC3583 kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE68139 NE68118

    014e1

    Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 014e1 transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE68018

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


    Original     		PDF NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507

    transistor MJE 2955

    Abstract: 842 ic SOT 663 footprint TRANSISTOR nf 842
    Text: SILICON TRANSISTOR NE661M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 2e-12 1e-11 08e-12 transistor MJE 2955 842 ic SOT 663 footprint TRANSISTOR nf 842

    1820 0944

    Abstract: NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) s


    Original     		PDF NE681 NE681 1820 0944 NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor

    mje 1303

    Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 NE68039-T1 NE68039R-T1 mje 1303 transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000

    mje 1303

    Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X

    transistor bf 968

    Abstract: No abstract text available
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O


    Original     		PDF NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968

    TRANSISTOR C 6090 npn

    Abstract: TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 NE685 S21E
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 12 GHz


    Original     		PDF UPA806T NE685 UPA806T 24-Hour TRANSISTOR C 6090 npn TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 S21E

    IC 4047

    Abstract: bf 695 NE685 NE696M01 NE696M01-T1 S21E IB 6420 opt 300 lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz


    Original     		PDF NE696M01 NE696M01 NE685) OT363 15e-9 58e-9 4e-12 18e-12 696M01 IC 4047 bf 695 NE685 NE696M01-T1 S21E IB 6420 opt 300 lex m01 001

    NE685

    Abstract: NE696M01 NE696M01-T1 S21E lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz


    Original     		PDF NE696M01 NE696M01 NE685) OT363 15e-9 58e-9 4e-12 18e-12 696M01 NE685 NE696M01-T1 S21E lex m01 001

    transistor nec 8772

    Abstract: nec 8772 transistor BR 8772 transistor BR 8772 nec 8772 NEC transistor 8772 MJE 4302 8772 nec transistor bias NESG2031M05 NESG2031M05
    Text: NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz


    Original     		PDF NESG2031M05 OT-343 NESG2031M05 642e-15 751e-3 06e-3 4e-15 transistor nec 8772 nec 8772 transistor BR 8772 transistor BR 8772 nec 8772 NEC transistor 8772 MJE 4302 8772 nec transistor bias NESG2031M05

    bf 331

    Abstract: bf331 NESG2021M05 NESG2021M05-T1-A S21E ic MAX 8997
    Text: DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz


    Original     		PDF NESG2021M05 OT-343 NESG2021M05 bf 331 bf331 NESG2021M05-T1-A S21E ic MAX 8997

    bf 331

    Abstract: ic MAX 8997 ic 7804 bf331 Ic 9148 NESG2021M05 NESG2021M05-T1 S21E 285-2 MAG IC Nec 9002
    Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz


    Original     		PDF NESG2021M05 OT-343 NESG2021M05 9e-15 4e-15 bf 331 ic MAX 8997 ic 7804 bf331 Ic 9148 NESG2021M05-T1 S21E 285-2 MAG IC Nec 9002

    LB 1639

    Abstract: transistor TT 3043
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP


    OCR Scan     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B LB 1639 transistor TT 3043

    702 TRANSISTOR sot-23

    Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan     		PDF NE680 NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B 702 TRANSISTOR sot-23 mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331

    mje 1303

    Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan     		PDF NE680 NE68Q NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B mje 1303 transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 15T09 model RB-30 S PT 100

    TRANSISTOR C 6090 npn

    Abstract: transistor 9527 BJT 5240 k 3531 transistor CD 14603
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S 2 1 E|2 = 8.5 dB TYP at 2 GHz . HIGH GAIN BANDW IDTH: It = 12 GHz


    OCR Scan     		PDF NE685 UpA806T UPA806T 24-Hour TRANSISTOR C 6090 npn transistor 9527 BJT 5240 k 3531 transistor CD 14603

    Transistors BF 494

    Abstract: Transistor BJT 547 b transistor kf 469
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)


    OCR Scan     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 Transistors BF 494 Transistor BJT 547 b transistor kf 469