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    Bourns Inc 4611X-101-472LF

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    DigiKey 4611X-101-472LF Bulk 2,047 1
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    Bourns Inc 4611X-101-222LF

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    TME 4611X-101-222LF 1,225 291
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    Bourns Inc 4611X-101-154LF

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    Bourns Inc 4611X-101-271LF

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    DigiKey 4611X-101-271LF Bulk 1,990 1
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    Avnet Americas 4611X-101-271LF Bulk 16 Weeks 2,000
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    Bourns Inc 4611X-101-332LF

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    DigiKey 4611X-101-332LF Bulk 1,985 1
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    1X101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor m285

    Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
    Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 167A690 182A934 1x106 1x1014 1x109 1x10-11 1x1012 5962H92153 36-Lead 28-Lead transistor m285 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650

    prom 238A790

    Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		PDF 238A790 2x105 1x1012 28-Lead 28C256 AT28C256. AS9000, prom 238A790 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite BAE Systems

    238A792

    Abstract: No abstract text available
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 238A792 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, 238A792

    190A325

    Abstract: C710 D 5962h96877
    Text: 190A325 198A592 128K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 190A325 198A592 5962H96877 40-Lead 32-Lead 1x106 1x1014 1x109 1x10-11 C710 D 5962h96877

    prom 238A790

    Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
    Text: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free


    Original     		PDF 238A790 28-Lead 2x105 1x1012 28C256 AT28C256. AS9000, x5040) prom 238A790 AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE

    S4 46

    Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 225A833 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, S4 46 AEFJANTXV1N4100-1-BAE/TR/BAE 225A833

    HX84050

    Abstract: No abstract text available
    Text: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2


    Original     		PDF HX84050 1x1014 1x109 1x1011 1x10-10 200-Lead HX84050

    CQFj 44

    Abstract: CQFJ 68 lead CQFJ
    Text: WS128K32-25G2SMX 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • Access Time of 25ns ■ Radiation Tolerant • Total Dose Hardness through 1x106 rad SiO2 ■ Neutron Hardness through 1x1014 cm-2 ■ Dynamic and Static Transient Upset Hardness through


    Original     		PDF WS128K32-25G2SMX 128Kx32 1x106 1x1014 1x1011 1x1012 1x10-10 WS128K32-25AR 128Kx32 CQFj 44 CQFJ 68 lead CQFJ

    A1760

    Abstract: 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 238A792 64-Lead 1x106 1x1014 1x109 1x10-11 AS9000, A1760 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE

    HXNV01600

    Abstract: No abstract text available
    Text: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness 1x1010 rad(Si)/s Dose Rate Survivability 1x1012 rad(Si)/s Soft Error Rate ≤ 1x10-10 upsets/bit-day


    Original     		PDF HXNV01600 1x106 1x1010 1x1012 1x10-10 1x1014 ADS-14229 HXNV01600

    197A807

    Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		PDF 197A807 2x105 1x1012 5962R96891 28-Lead 28C256 AT28C256. AS9000, 197A807 BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On n 150 nm Process Leff = 130 nm n Total Dose Hardness n Dose Rate Upset Hardness ≥ 1x109 rad(Si)/s Dose Rate Survivability ≥ 1x1012 rad(Si)/s


    Original     		PDF HXNV01600 1x106 1x109 1x1012 1x10-10 1x1014 1x1015

    BAE Systems

    Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML
    Text: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 209A542 1x106 1x1014 1x109 1x10-11 40-Lead AS9000, BAE Systems AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML

    transistor B885

    Abstract: 201A072 225A837 B885
    Text: 201A072 225A837 256K x 8 Radiation Hardened Static RAM MCM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 201A072 225A837 1x106 1x1014 1x109 1x10-11 1x1012 5962H99541 40-Lead AS9000, transistor B885 201A072 225A837 B885

    Untitled

    Abstract: No abstract text available
    Text: D-HR Series High Insulation Resistance, High Voltage Relays -10kV & 15kV 10kV or 15kV Isolation Low Contact Resistance 1x1014 Ohms Minimum Insulation Resistance PCB or Flying Leads Connections Ideal for sensitive test and measurement circuits which require low leakage current losses


    Original     		PDF -10kV 1x1014 DAT71210F-HR) ISO9001

    Untitled

    Abstract: No abstract text available
    Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 203A665 5962H98615 40-Lead 1x106 1x1014 1x109 1x10-11 1x1012 AS9000, x5040)

    LT1012 spice model

    Abstract: LT1012 500E LT1024
    Text: /'TLTTCAB SPICE MACROMODELS TECHNOLOGY 1X1012 Macromodel Linear Technology LT1012 op amp model with calls for LT1024 Written: 09-05-1989 16:53:38 Type: Bipolar npn input, internal comp. Typical specs: Vos-l.OE-OS, I b = 3 .0E-11, I o s = 2 .0E-11, G B P = 6 .0E+05Hz, Phase mar.= 70 deg,


    OCR Scan     		PDF U1012 LT1012 LT1024) 0E-05, 0E-11, 0E-01V/us, 9E-01V/us, 380uA LT1012 spice model 500E LT1024

    Untitled

    Abstract: No abstract text available
    Text: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)


    OCR Scan     		PDF 1x10e 1x101 36-Lead 28-Lead HC6856 1E-10

    RAD HARD TRENCH TRANSISTOR

    Abstract: No abstract text available
    Text: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 FEATURES RADIATION • Fabricated with R IC M O S1“ Silicon on Insulator SOI 1.2 (im process • Total Dose Hardness through 1x10 e rad (S i0 2) • Neutron Hardness through 1x1014 cm 2 OTHER


    OCR Scan     		PDF 1x101 PIN23 HX6464/1 HX6464/2 HX6464/3 RAD HARD TRENCH TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Honeywell A dvance Information HC83240 128K X 32 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Automatic "Fly-By" Error Detect and Correct EDC for any single and double bit errors • Neutron Hardness through 1x1014 crrr2


    OCR Scan     		PDF 1x101 HC83240 SEL17 SEL18 SEL19 SEL20 SEL21 SEL22

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)


    OCR Scan     		PDF HC6364 1x106 1x1014cm

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS“ IV Silicon on Insulator S0l 0.8 jxm Process (Letf = 0.65 nm) • CMOS Compatible I/O Total Dose Hardness of >1x10 rad(Si02) Dose Rate Upset Hardness >1x1011rad(Si)/sec (5V)


    OCR Scan     		PDF HX9100 1x101 1x1012rad 1x101/cm2 HX9100 4SS1A72

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Advance Information 256K x 16 RADIATION-TOLERANT SRAM HC81640 FEATURES R A D IA TIO N OTHER • Total D ose H ardness at Tactical Level • Detects and Corrects All Single and Double Bit Errors Automatically • Neutron H ardness through 1x1014 cm 2


    OCR Scan     		PDF 1x101 HC81640

    harris 6616

    Abstract: No abstract text available
    Text: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2


    OCR Scan     		PDF 1x106 1x1014c 1x109 1x101 24-Lead HC6616/1 HC6616/2 harris 6616