1SS306 Search Results

1SS306 Price and Stock

Filter by Manufacturer


Toshiba America Electronic Components 1SS306TE85LF DIODE ARRAY GP 200V 100MA SC-61B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS306TE85LF	Digi-Reel	7,513		1	1 $1.95 10 $1.558 100 $1.95 1000 $0.98532 10000 $0.98532	Buy Now
	1SS306TE85LF	Cut Tape	7,513		1	1 $1.95 10 $1.558 100 $1.95 1000 $0.98532 10000 $0.98532	Buy Now
	1SS306TE85LF	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.78755	Buy Now
Mouser Electronics	1SS306TE85LF		23,043			1 $1.97 10 $1.64 100 $1.26 1000 $1.04 10000 $0.816	Buy Now
Win Source Electronics	1SS306TE85LF		60,000			1 - 10 - 100 - 1000 $0.1192 10000 $0.0968	Buy Now
PanJit Semiconductor SS3060HE_R1_00001 Schottky Diodes & Rectifiers 60V,Schottky,SOD-123HE,3A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SS3060HE_R1_00001		5,141			1 $0.33 10 $0.224 100 $0.117 1000 $0.106 10000 $0.071	Buy Now
PanJit Semiconductor SS3060HE-AU_R1_000A1 Schottky Diodes & Rectifiers 60V,Schottky,SOD-123HE,3A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SS3060HE-AU_R1_000A1		103			1 $0.42 10 $0.269 100 $0.144 1000 $0.121 10000 $0.084	Buy Now
PanJit Semiconductor SS3060HE_R1_10001 Schottky Diodes & Rectifiers 60V Schottky 3A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SS3060HE_R1_10001					1 - 10 - 100 - 1000 - 10000 $0.097	Get Quote
PanJit Semiconductor SS3060HE_R2_00001 Schottky Diodes & Rectifiers 60V Schottky 3A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SS3060HE_R2_00001					1 - 10 - 100 - 1000 - 10000 $0.084	Get Quote

Find more 1SS306 price and stock on Findchips.com

1SS306 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
1SS306	Kexin	Silicon Epitaxial Planar Type	Original	PDF
1SS306	Toshiba	Japanese - Diodes	Original	PDF
1SS306	Toshiba	Diode - Silicon Epitaxial Planar Type	Original	PDF
1SS306	TY Semiconductor	Silicon Epitaxial Planar Type - SOT-143	Original	PDF
1SS306	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1SS306	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
1SS306	Toshiba	Toshiba Shortform Catalog	Scan	PDF
1SS306	Toshiba	DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APLICATIONS)	Scan	PDF
1SS306	Toshiba	DIODE	Scan	PDF
1SS306TE85L	Toshiba	1SS306 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode	Original	PDF
1SS306TE85LF	Toshiba	1SS306TE85LF - Diode Switching 250V 0.1A 4-Pin SMQ T/R	Original	PDF
1SS306TE85R	Toshiba	1SS306 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode	Original	PDF

1SS306 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1SS306 Abstract: No abstract text available Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage, High Speed Switching Applications z Low forward voltage Unit: mm : VF 2 = 0.90V (typ.) z Fast reverse recovery time : trr = 30ns (max) z Small total capacitance : CT = 1.5pF (typ.) z Small package	Original	1SS306 SC-61 1SS306	PDF
1SS306 Abstract: SMD Marking X1 MARKING A3 Text: Diodes SMD Type Silicon Epitaxial Planar Type 1SS306 Unit: mm Features Low forward voltage :VF 2 = 0.9 V(Typ) Fast reverse recovery time :trr = 30 ns (Typ) Small total capacitance :CT = 1.5 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating	Original	1SS306 100mA 1SS306 SMD Marking X1 MARKING A3	PDF
Untitled Abstract: No abstract text available Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications l Low forward voltage Unit: mm : VF 2 = 0.90V (typ.) l Fast reverse recovery time : trr = 30ns (max) l Small total capacitance : CT = 1.5pF (typ.) l Small package	Original	1SS306 SC-61 100mA	PDF
1SS306 Abstract: No abstract text available Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage, High Speed Switching Applications z Low forward voltage Unit: mm : VF 2 = 0.90V (typ.) z Fast reverse recovery time : trr = 30ns (max) z Small total capacitance : CT = 1.5pF (typ.) z Small package	Original	1SS306 SC-61 1SS306	PDF
Untitled Abstract: No abstract text available Text: Product specification 1SS306 Unit: mm Features Low forward voltage :VF 2 = 0.9 V(Typ) Fast reverse recovery time :trr = 30 ns (Typ) Small total capacitance :CT = 1.5 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRM 250 V VR 200 V	Original	1SS306 100mA	PDF
1SS306 Abstract: No abstract text available Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications Unit in mm Low forward voltage : VF 2 = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package	Original	1SS306 SC-61 961001EAA2' 1SS306	PDF
1SS306 Abstract: AP-150 VR200 Text: 1SS306 東芝ダイオードシリコンエピタキシャルプレーナ形 1SS306 ○ z z z z 超高速度スイッチング用 : : : : 外形が小さい。順方向特性が良い。逆回復時間が短い。端子間容量が小さい。単位: mm	Original	1SS306 SC-61 100mA 1SS306 AP-150 VR200	PDF
1SS306 Abstract: No abstract text available Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications Low forward voltage Unit: mm : VF 2 = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package	Original	1SS306 SC-61 1SS306	PDF
1SS306 Abstract: No abstract text available Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications l Low forward voltage Unit: mm : VF 2 = 0.90V (typ.) l Fast reverse recovery time : trr = 30ns (max) l Small total capacitance : CT = 1.5pF (typ.) l Small package	Original	1SS306 SC-61 10mstransportation 1SS306	PDF
SCJ0004N Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT Text: 東芝半導体製品総覧表 2009 年 7 月版ダイオード整流ダイオード可変容量ダイオード高周波スイッチ用ダイオードツエナーダイオードスイッチングダイオードショットキーバリアダイオード	Original	SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT	PDF
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983	PDF
Variable Capacitance Diodes Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24	PDF
SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R	PDF
ESM 740 Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.	Original	SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126	PDF

Design Considerations for Triggering of Flashlamp Abstract: flash trigger transformer LT3438 PERKIN ELMER BGDC0007PKI5700 radio trigger xenon flash perkin elmer cathode kijima KP-98 Flashlamp kijima musen GT5G131 Text: Application Note 95 March 2004 Simple Circuitry for Cellular Telephone/Camera Flash Illumination A Practical Guide for Successfully Implementing Flashlamps Jim Williams and Albert Wu INTRODUCTION Next generation cellular telephones will include high quality photographic capability. Improved image sensors and	Original	cl89-8266 LT3468 an95f AN95-11 AN95-12 Design Considerations for Triggering of Flashlamp flash trigger transformer LT3438 PERKIN ELMER BGDC0007PKI5700 radio trigger xenon flash perkin elmer cathode kijima KP-98 Flashlamp kijima musen GT5G131	PDF
LT 543 common cathode Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current	Original	2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor	PDF
1SS306 Abstract: No abstract text available Text: 1SS306 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS306 Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. + 0.2 • • • • Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp 2 —0.90V (Typ.)	OCR Scan	1SS306 SC-61 SC-61 961001EAA2' 1SS306	PDF
Untitled Abstract: No abstract text available Text: 1SS306 TO SHIBA 1SS306 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. > - 0.2 • • • • Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp 2 = 0.90V (Typ.)	OCR Scan	1SS306 SC-61	PDF
1SS306 Abstract: No abstract text available Text: 1SS306 SILICON EPITAXIAL PLANAR TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Unit in rran . Low Forward Voltage + 0.2 2.9 -0.3 : V f = 0.92V Typ. . Fast Reverse Recovery Time : trr= 60ns(Max.) . Small Total Capacitance : Ct = 2 .2pF(Typ.) . Small Package	OCR Scan	1SS306 SC-61 100mA 1SS306	PDF
Untitled Abstract: No abstract text available Text: 1SS306 TO SHIBA 1SS306 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. • • • • Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp 2 = 0.90V (Typ.) : trr = 30ns (Max.)	OCR Scan	1SS306 SC-61	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 1SS306 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 3 Q6 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Unit in mm 0.2 0.3 + 2.9 : Vp 2 = 0.90V (Typ.) • Low Forward Voltage • Fast Reverse RecoveryTime : • Small Total Capacitance : Ct = 1.5pF (Typ.)	OCR Scan	1SS306 SC-61 961001EAA2'	PDF
1S1585 Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241 Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80	OCR Scan	OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241	PDF
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737	PDF
TA8172AF Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16	OCR Scan	015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P	PDF

Privacy Settings

1SS306 Search Results

1SS306 Price and Stock

Toshiba America Electronic Components 1SS306TE85LF

PanJit Semiconductor SS3060HE_R1_00001

PanJit Semiconductor SS3060HE-AU_R1_000A1

PanJit Semiconductor SS3060HE_R1_10001

PanJit Semiconductor SS3060HE_R2_00001

1SS306 Datasheets (12)

1SS306 Datasheets Context Search

1SS306

1SS306

Untitled

1SS306

Untitled

1SS306

1SS306

1SS306

1SS306

SCJ0004N

lm2804

Variable Capacitance Diodes

SSM3J307T

ESM 740

Design Considerations for Triggering of Flashlamp

LT 543 common cathode

1SS306

Untitled

1SS306

Untitled

Untitled

1S1585

2N3904 331 transistor

TA8172AF