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    GT5G131 Search Results

    GT5G131 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT5G131 Toshiba TRANS IGBT CHIP N-CH 400V 50A 8(2-6J1C) Original PDF
    GT5G131 Toshiba Discrete IGBTs Original PDF
    GT5G131 Toshiba Strobe Flash Applications Original PDF

    GT5G131 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT5G131

    Abstract: No abstract text available
    Text: GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm • 3-V gate drive voltage: VGE = 3.0 V min (@IC = 130 A) · Supplied in compact and thin package requires only a small mounting area · 5th generation (trench gate structure) IGBT


    Original     		PDF GT5G131 GT5G131

    Untitled

    Abstract: No abstract text available
    Text: GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm • 3-V gate drive voltage: VGE = 3.0 V min (@IC = 130 A) • Supplied in compact and thin package requires only a small mounting area •


    Original     		PDF GT5G131

    GT5G131

    Abstract: No abstract text available
    Text: GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm • 3-V gate drive voltage: VGE = 3.0 V min (@IC = 130 A) • Supplied in compact and thin package requires only a small mounting area •


    Original     		PDF GT5G131 GT5G131

    GT5G131

    Abstract: No abstract text available
    Text: GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm • 3-V gate drive voltage: VGE = 3.0 V min (@IC = 130 A) • Supplied in compact and thin package requires only a small mounting area •


    Original     		PDF GT5G131 GT5G131

    TPD7203F

    Abstract: THPV357023BCBB AL50 GT5G131 THPV357022BCBB TPS850 TPS851 MCP NAND NOR 10mm4
    Text: 東芝半導体情報誌アイ 2002年5月号  VOLUME 118 今月の新製品情報 •業界最小サイズのスタックドMCP .P2 ■W-CDMA用InGaP系 HBTパワーアンプモジュール .P2 ■3V駆動ストロボフラッシュ用IGBT .P3


    Original     		PDF 03-3457-3405FAX. THPV357022BCBB/THPV357023BCBB 10mm4 70mm2 LSI045-890-2524 TB6551F TPD7203F THPV357023BCBB AL50 GT5G131 THPV357022BCBB TPS850 TPS851 MCP NAND NOR 10mm4

    s5j53

    Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
    Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require


    Original     		PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A

    Design Considerations for Triggering of Flashlamp

    Abstract: flash trigger transformer LT3438 PERKIN ELMER BGDC0007PKI5700 radio trigger xenon flash perkin elmer cathode kijima KP-98 Flashlamp kijima musen GT5G131
    Text: Application Note 95 March 2004 Simple Circuitry for Cellular Telephone/Camera Flash Illumination A Practical Guide for Successfully Implementing Flashlamps Jim Williams and Albert Wu INTRODUCTION Next generation cellular telephones will include high quality photographic capability. Improved image sensors and


    Original     		PDF cl89-8266 LT3468 an95f AN95-11 AN95-12 Design Considerations for Triggering of Flashlamp flash trigger transformer LT3438 PERKIN ELMER BGDC0007PKI5700 radio trigger xenon flash perkin elmer cathode kijima KP-98 Flashlamp kijima musen GT5G131

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124

    S6A35

    Abstract: SF3G42 SF10JZ47 S6785G SF3J42 1R5GU41 S6A37 SCR S6A37 GT8G132 SM3GZ47
    Text: [ 9 ] 応用回路例 [ 9 ] 応用回路例 1. スイッチング電源 1 自励式シングルフライバック方式 (RCC) 応用回路例 交 交流入力 二次整流 ダイオード 流 フィルタ + 直流出力 − 差動増幅 回 路 駆動用


    Original     		PDF AC100 1JU42 AC200 05NU42 CMS04, CMS05 5FWJ2CZ47M 5FWJ2C48M 10FWJ2CZ47M 10FWJ2C48M S6A35 SF3G42 SF10JZ47 S6785G SF3J42 1R5GU41 S6A37 SCR S6A37 GT8G132 SM3GZ47

    GT30F121

    Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
    Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications


    Original     		PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101

    Rubycon photoflash 330V 120

    Abstract: No abstract text available
    Text: LD7270 6/18/2010 Smart Photoflash Capacitor Charger with Integrated MOS REV：03 General Description Features The LD7270 is an ideal charge control IC for flash units, • 1.8V~6V Battery Voltage Range featuring internal soft start, adjustable charging current


    Original     		PDF LD7270 LD7270 LD7270-DS-03, Rubycon photoflash 330V 120

    Untitled

    Abstract: No abstract text available
    Text: LD7265A 6/25/2008 Smart Photoflash Capacitor Charger with Integrated MOS REV:01 General Description Features The LD7265A is an ideal charge control IC for flash units • Adjustable Output Voltage with internal soft start, adjustable charging current and •


    Original     		PDF LD7265A LD7265A LD7265A-DS-01