Untitled
Abstract: No abstract text available
Text: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance
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TS16949
AECQ101
2002/95/EC
DO-214AA,
2012-REV
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Untitled
Abstract: No abstract text available
Text: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance
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TS16949
AEC-Q101
2011/65/EU
IEC61249
2012-REV
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Untitled
Abstract: No abstract text available
Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability
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DO-214AA,
MIL-STD-750,
2002/95/EC
2012-REV
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marking 43b
Abstract: E1A-481
Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability
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2002/95/EC
DO-214AA,
MIL-STD-750,
2012-REV
marking 43b
E1A-481
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zener 3.082
Abstract: 1SMB3EZ13 1SMB3EZ10 1SMB3EZ100 1SMB3EZ11 1SMB3EZ12 1SMB3EZ51 3051 zener diode 47-10 Thermal Resistance to ambient SMB Case diode IR SMB
Text: 1SMB3EZ6.8~1SMB3EZ100 SILICON ZENER DIODES VOLTAGE 6.8 to 100 Volts POWER 3.0 Watts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Plastic package has Underwriters Laboratory Flammability
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1SMB3EZ100
SMB/DO-214AA
DO-214AA,
MIL-STD-750,
zener 3.082
1SMB3EZ13
1SMB3EZ10
1SMB3EZ100
1SMB3EZ11
1SMB3EZ12
1SMB3EZ51 3051
zener diode 47-10
Thermal Resistance to ambient SMB Case
diode IR SMB
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theory
Abstract: transistor d355 2N3904 a03 clf circuit diagram with voltage CLS62-222 D355 transistor 1DDD355BB-M02 D3552 design ideas 2N3904
Text: Data Sheet D355B Electroluminescent Lamp Driver IC General Description 5 D3 The Durel D355B is part of a family of highly integrated EL drivers based on Durel’s patented three-port 3P topology, which offers built-in EMI shielding. This high efficiency device is well suited
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D355B
D355B
theory
transistor d355
2N3904 a03
clf circuit diagram with voltage
CLS62-222
D355 transistor
1DDD355BB-M02
D3552
design ideas
2N3904
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E1A-481
Abstract: No abstract text available
Text: 1SMB3EZ5.6 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 5.6 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O
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2002/95/EC
DO-214AA,
MIL-STD-750,
2011-REV
E1A-481
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Thermal Resistance to ambient SMB Case
Abstract: zener diode 47-10 1SMB2EZ10 1SMB2EZ100 1SMB2EZ11 1SMB2EZ12 1SMB2EZ13 diode SMB case
Text: 1SMB2EZ6.8~1SMB2EZ100 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 100 Volts POWER 2.0 Watts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Plastic package has Underwriters Laboratory Flammability
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1SMB2EZ100
SMB/DO-214AA
DO-214AA,
MIL-STD-750,
Thermal Resistance to ambient SMB Case
zener diode 47-10
1SMB2EZ10
1SMB2EZ100
1SMB2EZ11
1SMB2EZ12
1SMB2EZ13
diode SMB case
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1SMB2EZ13
Abstract: 1SMB2EZ51 1SMB2EZ10 1SMB2EZ11 1SMB2EZ12 E1A-481
Text: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V
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1SMB2EZ51
2002/95/EC
DO-214AA,
MIL-STD-750,
E1A-481)
1SMB2EZ13
1SMB2EZ51
1SMB2EZ10
1SMB2EZ11
1SMB2EZ12
E1A-481
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5929B
Abstract: 5938B SMB5934B 5940B 5934B SMB59 5925B 5931B 5927B 5936B
Text: SMB5921B thru SMB5949B SURFACE MOUNT ZENER TYPE SURFACE MOUNT ZENER DIODES 3.0 WATTS SMB/DO-214AA .075 1.91 .083(2.11) .130(3.30) .155(3.94) .160(4.06) .185(4.70) .006(.152) .012(.305) .083(2.13) .096(2.44) .030(0.76) .050(1.27) .004(.102) .008(.203) .200(5.08)
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SMB5921B
SMB5949B
SMB/DO-214AA
DO-214AA,
MIL-STD-750,
E1A-481)
5941B
SMB5942B
5942B
SMB5943B
5929B
5938B
SMB5934B
5940B
5934B
SMB59
5925B
5931B
5927B
5936B
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Untitled
Abstract: No abstract text available
Text: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V
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1SMB2EZ51
DO-214AA,
MIL-STD-750,
E1A-481)
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1SMB3EZ10
Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ51 ZENER DIODE 5.1B e1a481 E1A-481
Text: 1SMB3EZ6.8~1SMB3EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 3.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V
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1SMB3EZ51
2002/95/EC
DO-214AA,
MIL-STD-750,
E1A-481)
1SMB3EZ10
1SMB3EZ11
1SMB3EZ12
1SMB3EZ13
1SMB3EZ51
ZENER DIODE 5.1B
e1a481
E1A-481
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Untitled
Abstract: No abstract text available
Text: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance
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TS16949
AEC-Q101
2002/95/EC
2012-REV
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zener 4.7v
Abstract: E1A-481
Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability
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Original
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2002/95/EC
DO-214AA,
MIL-STD-750,
2012-REV
zener 4.7v
E1A-481
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8v2b
Abstract: No abstract text available
Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability
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Original
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PDF
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2002/95/EC
DO-214AA,
MIL-STD-750,
2012-REV
8v2b
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BDS-4020S
Abstract: D365A m02 marking gain BDS4020S 1ddd365aa design ideas EL lamp BAS21LT1 BDS-4020 MMBT5551LT1
Text: Data Sheet D365A Electroluminescent Lamp Driver IC General Description The Durel D365 is part of a family of highly integrated EL drivers based on Durel’s patented three-port 3P topology which offers built-in EMI shielding. The D365 IC and three components make a
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D365A
BDS-4020S
D365A
m02 marking gain
BDS4020S
1ddd365aa
design ideas
EL lamp
BAS21LT1
BDS-4020
MMBT5551LT1
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Untitled
Abstract: No abstract text available
Text: PD - 9.1356D International IG R Rectifier IRF7416 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching Voss = -30V Ftas on = 0 .0 2 Q
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OCR Scan
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PDF
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1356D
IRF7416
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RIO 1R0
Abstract: r001 smd
Text: i c1 - 1 M EC C G S H IG H VO LTA G E R E S IS T O R S H IG H VALUE R E S IS T O R S H IG H P O W E R R E S IS T O R S A LU M IN IU M C L A D R E S IS T O R S C U R R E N T S E N S E R E S IS T O R S SMD Precision Current Sense Resistor TY PE S S E R IE S
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OCR Scan
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PDF
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847-390-6680/Fax
ti4S47DD
RIO 1R0
r001 smd
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E1A-481
Abstract: No abstract text available
Text: Temperature profile of reflow soldering Foot Pattern Embossed Carrier Tape Dimensions Package USAGE ’’i DIRECTION Top Cou«r Tape , —I END START *1•■■■■■■■■ L JL J L I_ ' 1 /- À - T '''Embossed Cartier Tape 78 Reel No Corrporient
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OCR Scan
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PDF
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110Mn
500pcs
E1A481
100Mai
EIA481
E1A-481
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E1A-481
Abstract: No abstract text available
Text: % f 1 a, t V RT05, RT03, THIN FILM CHIP RESISTORS 1 m % s * \ i v * J i m * FEATURES • High stability «LowTCR • H'9h accuracy ±0.1%,±0.5% M ELECTRICAL CHARACTERISTICS Size Code RT05 RT03 Power rating @70'C Temperature coefficient Delated to 0 load at
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OCR Scan
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PDF
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100Q-100KQ
25ppm
-33Kiï
1/10W
--91Q
100S2--100Kß
100ppm/`
1/16W
E1A-481
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e1a481
Abstract: E1A-481
Text: _% «5*^% * 1 i t a rr -M m ^4 * ^ » £ * % ¿s. e ^@6- 4^ ga»g # FEATURES . • High stability ^ pB| W • RT05, RT03, THIN FILM CHIP RESISTORS 4 % .H ig h accuracy ±0.1%,±0.5% ^ ELECTRICAL CHARACTERISTICS Size Code RT05 RT03 Power rating @70 °C
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OCR Scan
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PDF
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M00KQ
25ppm/
100Q-33KQ
--25ppm/"
1/10W
--100ppm/
to--125
--91Q
50ppm/
--100KQ
e1a481
E1A-481
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Untitled
Abstract: No abstract text available
Text: PD - 9.1238C International IOR Rectifier IRF7301 HEXFEf Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V d s s = 20V
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OCR Scan
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PDF
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1238C
IRF7301
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RIO 1R0
Abstract: CGS 1R0 E1A-481-A
Text: MEC CGS HIGH VOLTAGE R E S IS T O R S HIGH VALUE R E S IS T O R S HIGH P O W E R R E S IS T O R S ALUMINIUM C L A D R E S IS T O R S C U R R E N T S E N S E R E S IS T O R S SMD Precision Current Sense Resistor T Y P E S S E R IE S M E C C G S introduces two surface mount power resistors to meet
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OCR Scan
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PDF
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847-390-6680/Fax
RIO 1R0
CGS 1R0
E1A-481-A
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RC-06
Abstract: RC05 E1A-481
Text: RC02, RC03, RC05, RC06, « RC12, RC20, RC25 ' THICK FILM CHIP RESISTORS FEATURES • Extremely thin and light • Highly reliable multilayer electrode construction • Compatible with both flow soldering and reflow soldering • Highly stable in auto-placement surface mounting
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OCR Scan
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PDF
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RS481
1/16W
1/10W
RC12g
EIA-96
E1A481.
847-390-6680/Fax
RC-06
RC05
E1A-481
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