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    1SMB3EZ10 Price and Stock

    PanJit Group 1SMB3EZ10_R1_00001

    DIODE ZENER 10V 3W DO214AA
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    DigiKey 1SMB3EZ10_R1_00001 Reel 800 800
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    1SMB3EZ10_R1_00001 Cut Tape 780 1
    • 1 $0.43
    • 10 $0.29
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    1SMB3EZ10_R1_00001 Digi-Reel 1
    • 1 $0.43
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    Ozdisan Elektronik 1SMB3EZ10_R1_00001
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    PanJit Group 1SMB3EZ10-AU_R1_000A1

    DIODE ZENER 10V 3W DO214AA
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    DigiKey 1SMB3EZ10-AU_R1_000A1 Cut Tape 268 1
    • 1 $0.46
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    1SMB3EZ10-AU_R1_000A1 Reel 800
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    • 10000 $0.1035
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    1SMB3EZ10-AU_R1_000A1 Digi-Reel 1
    • 1 $0.46
    • 10 $0.311
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    PanJit Semiconductor 1SMB3EZ10_R1_00001

    Zener Diodes 3000mW,ZENER,SMB,10V
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    Mouser Electronics 1SMB3EZ10_R1_00001
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    NAC 1SMB3EZ10_R1_00001 Reel 800
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    PanJit Semiconductor 1SMB3EZ10-AU_R1_000A1

    Zener Diodes 3000mW,ZENER,SMB,10V
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    Mouser Electronics 1SMB3EZ10-AU_R1_000A1
    • 1 $0.46
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    • 100 $0.211
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    NAC 1SMB3EZ10-AU_R1_000A1 Reel 800
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    Avnet Silica 1SMB3EZ10-AU_R1_000A1 18 Weeks 800
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    PanJit Semiconductor 1SMB3EZ10_R2_00001

    Zener Diodes 3000mW ZENER 10V
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    Mouser Electronics 1SMB3EZ10_R2_00001
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    NAC 1SMB3EZ10_R2_00001 3,000
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    Avnet Silica 1SMB3EZ10_R2_00001 18 Weeks 81,000
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    1SMB3EZ10 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SMB3EZ100 PanJit Semiconductors SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) Original PDF
    1SMB3EZ100 Transys Electronics SURFACE MOUNT SILICON ZENER DIODE Scan PDF

    1SMB3EZ10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    zener 3.082

    Abstract: 1SMB3EZ13 1SMB3EZ10 1SMB3EZ100 1SMB3EZ11 1SMB3EZ12 1SMB3EZ51 3051 zener diode 47-10 Thermal Resistance to ambient SMB Case diode IR SMB
    Text: 1SMB3EZ6.8~1SMB3EZ100 SILICON ZENER DIODES VOLTAGE 6.8 to 100 Volts POWER 3.0 Watts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Plastic package has Underwriters Laboratory Flammability


    Original     		1SMB3EZ100 SMB/DO-214AA DO-214AA, MIL-STD-750, zener 3.082 1SMB3EZ13 1SMB3EZ10 1SMB3EZ100 1SMB3EZ11 1SMB3EZ12 1SMB3EZ51 3051 zener diode 47-10 Thermal Resistance to ambient SMB Case diode IR SMB PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance


    Original     		TS16949 AECQ101 2002/95/EC DO-214AA, 2012-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance


    Original     		TS16949 AEC-Q101 2011/65/EU IEC61249 2012-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original     		DO-214AA, MIL-STD-750, 2002/95/EC 2012-REV PDF

    marking 43b

    Abstract: E1A-481
    Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original     		2002/95/EC DO-214AA, MIL-STD-750, 2012-REV marking 43b E1A-481 PDF

    1SMB3EZ11

    Abstract: 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200
    Text: 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l Glass passivated junction


    Original     		1SMB3EZ11 1SMB3EZ200 DO-214AA DO-214AA, MIL-STD-750, 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200 PDF

    TSP160C

    Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
    Text: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04


    Original     		50Amp 80Amp 100Amp 375x360x390/390x240x420 375x360x390 O-252 TSP160C ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C PDF

    E1A-481

    Abstract: No abstract text available
    Text: 1SMB3EZ5.6 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 5.6 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O


    Original     		2002/95/EC DO-214AA, MIL-STD-750, 2011-REV E1A-481 PDF

    1SMB3EZ10

    Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ51 ZENER DIODE 5.1B e1a481 E1A-481
    Text: 1SMB3EZ6.8~1SMB3EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 3.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V


    Original     		1SMB3EZ51 2002/95/EC DO-214AA, MIL-STD-750, E1A-481) 1SMB3EZ10 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ51 ZENER DIODE 5.1B e1a481 E1A-481 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance


    Original     		TS16949 AEC-Q101 2002/95/EC 2012-REV PDF

    zener 4.7v

    Abstract: E1A-481
    Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original     		2002/95/EC DO-214AA, MIL-STD-750, 2012-REV zener 4.7v E1A-481 PDF

    8v2b

    Abstract: No abstract text available
    Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original     		2002/95/EC DO-214AA, MIL-STD-750, 2012-REV 8v2b PDF

    1SMB3EZ6.2

    Abstract: ZK marking E1A-481
    Text: 1SMB3EZ5.6 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 5.6 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O


    Original     		2002/95/EC DO-214AA, MIL-STD-750, 2011-REV 1SMB3EZ6.2 ZK marking E1A-481 PDF

    GV 475 diode

    Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode
    Text: TRANSYS ELECTRONICS LIMITED 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 W atts FEATURES For surface mounted app cations in order to DO-214AA optimize board space MODIFIED J-BEND Low prof e package Built-in strain re ef


    OCR Scan     		1SMB3EZ11 1SMB3EZ200 0J/10 DO-214AA, MIL-STD-750, GV 475 diode 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode PDF