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    1RF2 Search Results

    1RF2 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    HD6417751RF240D Renesas Electronics Corporation 32-bit Microcontrollers, , / Visit Renesas Electronics Corporation
    HD6417751RF200D Renesas Electronics Corporation 32-bit Microcontrollers, , / Visit Renesas Electronics Corporation
    HD6417751RF240V Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    HD6417751RF200V Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
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    1RF2 Price and Stock

    JRH Electronics TVS01RF-23-6S

    CONN RCPT FMALE 6POS GOLD CRIMP
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    DigiKey TVS01RF-23-6S Bulk 27 1
    • 1 $668.4
    • 10 $608.236
    • 100 $514.6728
    • 1000 $514.6728
    • 10000 $514.6728
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    JRH Electronics TVS01RF-25-7P

    CONN RCPT MALE 99POS GOLD CRIMP
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    DigiKey TVS01RF-25-7P Bag 27 1
    • 1 $707.16
    • 10 $643.527
    • 100 $544.509
    • 1000 $544.509
    • 10000 $544.509
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    JRH Electronics TVS01RF-25-8P

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    DigiKey TVS01RF-25-8P Bulk 27 1
    • 1 $1908.15
    • 10 $1736.418
    • 100 $1469.2728
    • 1000 $1469.2728
    • 10000 $1469.2728
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    JRH Electronics TVS01RF-25-7S

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    DigiKey TVS01RF-25-7S Bulk 27 1
    • 1 $446.8
    • 10 $406.582
    • 100 $344.0364
    • 1000 $344.0364
    • 10000 $344.0364
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    JRH Electronics TVS01RF-25-8S

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    DigiKey TVS01RF-25-8S Bulk 27 1
    • 1 $768.15
    • 10 $699.018
    • 100 $591.4728
    • 1000 $591.4728
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    1RF2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ispPAC 80 In-System Programmable Analog Circuit Features Functional Block Diagram • IN-SYSTEM PROGRAMMABLE ISP ANALOG — Instrument Amplifier Gain Stage — Precision Active Filtering (50kHz to 750kHz) — Continuous-Time Fifth Order Low Pass Topology


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    PDF 50kHz 750kHz) -74dB 100kHz) 16-Pin

    murata npo

    Abstract: Murata
    Text: FPGA Power Module 12V input, 8 Outputs at 2A to 8A Reference Design PRD1366 FEATURES Low cost Meet’s Specification for AVNET Mini Module Plus for Xilinx 7 series Kintex FPGA Hard wired turn on sequence High Efficiency >93% at full load 12 V input +/-10%


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    PDF PRD1366 ADP1850 murata npo Murata

    pac81

    Abstract: PG1AB C213 C231 C435
    Text: ispPAC81 In-System Programmable Analog Circuit October 2001 Data Sheet Functional Block Diagram Features • In-System Programmable ISP Analog • • • • • • Instrument Amplifier Gain Stage Precision Active Filtering (10kHz to 75kHz) Continuous-Time Fifth Order Low Pass Topology


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    PDF ispPAC81 10kHz 75kHz) 16-Pin pac81 PG1AB C213 C231 C435

    C213

    Abstract: C231 C435 PG1AB
    Text: In-System Programmable Analog Circuit October 2001 Data Sheet Features Functional Block Diagram • In-System Programmable ISP Analog • • • • • • Instrument Amplifier Gain Stage Precision Active Filtering (10kHz to 75kHz) Continuous-Time Fifth Order Low Pass Topology


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    PDF 10kHz 75kHz) -80dB 16-Pin C213 C231 C435 PG1AB

    Untitled

    Abstract: No abstract text available
    Text: ispPAC 80 In-System Programmable Analog Circuit Features Functional Block Diagram • IN-SYSTEM PROGRAMMABLE ISP ANALOG — Instrument Amplifier Gain Stage — Precision Active Filtering (50kHz to 750kHz) — Continuous-Time Fifth Order Low Pass Topology


    Original
    PDF 50kHz 750kHz) -74dB 100kHz) 16-Pin

    TMS 1600

    Abstract: No abstract text available
    Text: ispPAC 80 TM In-System Programmable Analog Circuit Features Functional Block Diagram • IN-SYSTEM PROGRAMMABLE ISP ANALOG — Instrument Amplifier Gain Stage — Precision Active Filtering (50kHz to 500kHz) — Continuous-Time Fifth Order Low Pass Topology


    Original
    PDF 50kHz 500kHz) -74dB 100kHz) 16-Pin TMS 1600

    C213

    Abstract: C231 C435
    Text: ispPAC 80 In-System Programmable Analog Circuit Features Functional Block Diagram • IN-SYSTEM PROGRAMMABLE ISP ANALOG — Instrument Amplifier Gain Stage — Precision Active Filtering (50kHz to 750kHz) — Continuous-Time Fifth Order Low Pass Topology


    Original
    PDF 50kHz 750kHz) -74dB 100kHz) 16-Pin C213 C231 C435

    PICO base station

    Abstract: transistor 386 PIN DIAGRAM signal path designer RF2123
    Text: BFB MICRO-DEVICES "•* « - > 1RF2123 HIGH POWER AMPLIFIER Typical Applications • 915 MHz ISM Band Applications Commercial and Consumer Systems • Driver stage for GSM Base Stations Portable Battery Powered Equipment • Base Station Equipment Product Description


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    PDF 1RF2123 RF2123 915MHz 800MHz 950MHz PICO base station transistor 386 PIN DIAGRAM signal path designer

    IRF232

    Abstract: IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90
    Text: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 I q . O BAIN CU RR EN T AMPERES Tc . CASE TEM PERATU RE <°C) F ig. 112 — T y p ic a l O n-R esistance V s. D ra in C u rre n t 20 40 Fig. 13 — M a x im u m D ra in C u rre n t V s. Case T e m p e ra tu re


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    PDF IRF220, IRF221, IRF222, IRF223 08TAIN 50KSZ IRF232 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90

    1RF250

    Abstract: IRF250 motorola MOSFET IRF250 transistor irf250 irf 250 MOSFET IRF 635 SSR -25 DD
    Text: MOTOROLA SC X S T R S /R 14E D I F b 3 ti7 E 5 4 QDÔTbLi fc, | MOTOROLA •a SEM ICONDUCTOR TECHNICAL DATA IRF250 IRF251 IRF252 IRF253 Pow er Field E ffect Transìstor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for low


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    PDF IRF250 IRF251 IRF252 IRF253 IRF250, IRF252, IRF253 1RF250 IRF250 motorola MOSFET IRF250 transistor irf250 irf 250 MOSFET IRF 635 SSR -25 DD

    ir 222

    Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


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    PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 ir 222 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642

    N555N

    Abstract: LDR Cds RF221 250M IRF220 IRF221 IRF222 IRF223
    Text: 01 3875081 G E SOLID D E ~ | 3Ö7SDÖ1 STATE Standard Power MOSFETs 0 1E ODlflETT 18279 “ File N u m b e r 1 56 7 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N EL EN H A N C E M E N T M OD E 4.0A and 5.0A, 150V-200V


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    PDF IRF220, IRF221, IRF222, IRF223 50V-200V IRF222 IRF223 N555N LDR Cds RF221 250M IRF220 IRF221

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


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    PDF DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20

    JR 200 RF TRANSMITTER

    Abstract: TX 433 N bx 433MHz VCO FM PLL
    Text: H bÌBÌ MICRO DEVICES RF2926 4 3 3 /8 6 8 /9 1 5 MHZ FM/AM/FSK/ASK/OOK DUAL CONVERSION TRANSCEIVER T y p ic a l A p p lic a tio n s • Wireless Meter Reading • Wireless Data Transceiver • Keyless Entry Systems • Wireless Security Systems • 433/868/915MHz ISM Band Systems


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    PDF RF2926 433/868/915MHz RF2926 48-lead RF2926J_ 915MHz JR 200 RF TRANSMITTER TX 433 N bx 433MHz VCO FM PLL

    irf 111

    Abstract: IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
    Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350


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    PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 irf 111 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A

    irf 80 n

    Abstract: irf 30A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 VNP002A
    Text: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220 S ilic o n ix


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    PDF O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 irf 80 n irf 30A IRF340 IRF350 IRF740 VNP002A

    irf244

    Abstract: IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA
    Text: - gj £ *± € ft A £ t§ <Ta=25^C Vd s or Vd g Vg s Pd Id * /CH a Ig s s rain * /CH Vg s * V) (V) (W) (A) V g s th) Id s s (nA) (V) (HA) (V) (V) (V) ft Id (nA) & & F os(on) Vd s = Vg s max Vd s m Id (on) Ciss g fs Coss ft Crss V g s =0 (max) *typ V g s


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    PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 1RF442 irf244 IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA

    irf113

    Abstract: 1RF440 1RF450 irf244 IRF242 IRF243 IRF245 IRF252 1RF340 Siliconix
    Text: - ft A gj £ *± V ds or € £ Vgs t§ <Ta=25^C Pd Id m a Ig s s V gs th ) Id s s ft & F o s o n ) Vd s = & I d (on) Coss C is s g fs * /CH rain * /CH Vg s =0 ( * ty p ) ( * ty p ) (* ty p ) Id (max) (max) (max) Vd s (A) (pF) (pF) (pF) (V) (max) max Id


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    PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 O-204AE IRF250 irf113 1RF440 1RF450 irf244 IRF242 IRF243 IRF245 IRF252 1RF340 Siliconix

    irf250 dc motor

    Abstract: IRF250 ic data
    Text: 4686226 I X Y S CORP 03 4t.0L.22Li □ 0 D 0 2 D f l ¡j □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a


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    PDF IRFC250: 2N6766 2N6765 IRF250/IRFP250 IRF251/IRFP251 IRF252/IRFP252 1RF253/IRFP253 IRF254/IRFP254 IRFC250 irf250 dc motor IRF250 ic data

    IRF254

    Abstract: No abstract text available
    Text: SI H ARRIS IRF254, IRF255 IRF256, IRF257 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features T 0 -2 0 4 A E • 22A and 20A , 2 75 V - 250V BOTTOM VIEW • r o s o n = 0 . 1 4 i l a n d 0 . 1 7 0 SOURCE • S in g le P u ls e A v a la n c h e E n e rg y R a te d


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    PDF Figure16. IRF254

    Untitled

    Abstract: No abstract text available
    Text: IRF234, IRF235, IRF236, IRF237 h a r r is SEUIC0NDUCT0R 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF IRF234, IRF235, IRF236, IRF237 1RF234, RF236, RF237

    irf*234 n

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 40E » • 430 2 2 7 1 GOBM'RQH b « H A S 33 HARRIS IR F234, IRF235 IR F236, IR F237 August 1991 N-Channel Power MOSFETs Avalanche-Energy Rated l\ Features Package T 0 -2 0 4 A A • 8.1A and 6 .SA, 2 7 5 V - 2 5 0V • rD S o n =


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    PDF IRF235 IRF234, IRF235, IRF236, IRF237 RF234, irf*234 n

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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    PDF

    3849

    Abstract: No abstract text available
    Text: 4686226 I X Y S CORP □IXYS ^ d F J M böbS Sti Q je j- ^ u . TECHNICAL DATA SHEET August 1988 DATA SHE ET NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • • . 2 0 0 V


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    PDF IRFC250: 2N6766 2N6765 IRF250/IRFP250 IRF251/IRFP251 IRF252/IRFP252 1RF253/Ã RFP253 IRF254/IRFP254 IRFC250 3849