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Anaren Microwave 1P503SR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	1P503SR		14,432			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Anaren Microwave 1P503S 1700MHZ - 2000MHZ RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.25DB INSERTION LOSS-MAX
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Quest Components	1P503S		15			1 $4.95 10 $2.475 100 $2.475 1000 $2.475 10000 $2.475	Buy Now
Anaren Microwave 1P503ST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
NexGen Digital	1P503ST		86			1 - 10 - 100 - 1000 - 10000 -	Get Quote

1P503S Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
1P503S		Anaren	Hybrid Couplers 3 dB, 90°		Original	PDF

1P503S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Model 1P503S Rev. B Hybrid Couplers 3 dB, 90°° Description The 1P503S Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503S is designed for balanced amplifiers, variable	Original	1P503S 1P503S	PDF
1P503S Abstract: ghz hybrid coupler Text: Model 1P503S Rev. B Hybrid Couplers 3 dB, 90°° Description The 1P503S Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503S is designed for balanced amplifiers, variable	Original	1P503S 1P503S ghz hybrid coupler	PDF
Untitled Abstract: No abstract text available Text: Model 1P503S Rev. C Hybrid Couplers 3 dB, 90°° Description The 1P503S Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503S is designed for balanced amplifiers, variable	Original	1P503S 1P503S	PDF
1P503S Abstract: ghz hybrid coupler Text: Model 1P503S Rev. A Hybrid Couplers 3 dB, 90°° Description The 1P503S Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503S is designed for balanced amplifiers, variable	Original	1P503S 1P503S ghz hybrid coupler	PDF
MRF8P20140WH/HS Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth	Original	AFT20P140--4WN AFT20P140-4WNR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3	PDF
ATC600F100JT250XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT	PDF
OP6180 Abstract: OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 BLF7G20LS-200 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118 Text: AN10921 BLF7G20LS-200 Doherty 1.805 to 1.88 GHz RF power amplifier Rev. 01 — 16 July 2010 Application note Document information Info Content Keywords BLF7G20LS-200, Doherty, RF, LDMOS Abstract This application note describes the design and performance of a power	Original	AN10921 BLF7G20LS-200 BLF7G20LS-200, OP6180 OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118	PDF
GRM32ER7YA106K88L Abstract: AN10847 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E Text: AN10847 Doherty RF performance analysis using the BLF6G20-230PRN Rev. 01 — 29 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty amplifiers, main amplifier, peak amplifier, AB amplifiers, RF performance, Digital PreDistortion DPD , base station	Original	AN10847 BLF6G20-230PRN BLF6G20-230PRN, AN10847 GRM32ER7YA106K88L 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E	PDF
MRF8P20140WHS Abstract: mrf8p20140 J473 MRF8P20140W Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WHS mrf8p20140 J473 MRF8P20140W	PDF
C5750X7S2A106KT Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501 Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth	Original	AFT20P140--4WN AFT20P140-4WNR3 AFT20P140--4WN C5750X7S2A106KT AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501	PDF
1P503 Abstract: 1P503S EIA-481-2 ghz hybrid coupler Text: Model 1P503 Rev. B Hybrid Couplers 3 dB, 90° Description The 1P503 Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503 is designed for balanced amplifiers, variable	Original	1P503 1P503 1P503) 1P503* EIA-481-2. 1P503S EIA-481-2 ghz hybrid coupler	PDF
Untitled Abstract: No abstract text available Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 2 — 28 October 2013 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200	Original	AN10944 BLF7G20LS-200 BLF7G20LS-200 1J503S 1P503S	PDF

MRF8P20100HR3 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth	Original	AFT20P140--4WN 1880-2025dated AFT20P140-4WNR3 AFT20P140-4WGNR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth	Original	AFT20P140--4WN AFT20P140-4WNR3 AFT20P140-4WGNR3 1/2014Semiconductor,	PDF