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    1N681 Price and Stock

    Novacap ES2211N681K502NTM

    CAP CER 680PF 250VAC C0G 2211
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    DigiKey ES2211N681K502NTM Reel 97,500 750
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    ES2211N681K502NTM Cut Tape 340 1
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    Microchip Technology Inc 1N6816

    DIODE SCHOTTKY 45V 25A THINKEY2
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    Microchip Technology Inc 1N6818

    DIODE SCHOTTKY 45V 75A THINKEY3
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    Microchip Technology Inc 1N6816R

    DIODE SCHOTTKY 45V 25A THINKEY2
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    Microchip Technology Inc 1N6818R

    DIODE SCHOTTKY 45V 75A THINKEY3
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    1N681 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N681 General Diode 75mA Iout, 300V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N681 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N681 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N681 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N681 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N681 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N681 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N6815 Microsemi LOW VOLTAGE DROP SCHOTTKY DIODE Original PDF
    1N6815R Microsemi Low Voltage Drop Schottky Diode Original PDF
    1N6816 Microsemi LOW LEAKAGE SCHOTTKY DIODE Original PDF
    1N6816R Microsemi Low Leakage Schottky Diode Original PDF
    1N6817 Microsemi LOW REVERSE LEAKAGE SCHOTTKY DIODE Original PDF
    1N6817R Microsemi LOW REVERSE LEAKAGE SCHOTTKY DIODE Original PDF
    1N6818 Microsemi LOW VOLTAGE DROP SCHOTTKY DIODE Original PDF
    1N6818R Microsemi LOW VOLTAGE DROP SCHOTTKY DIODE Original PDF
    1N6819 Microsemi LOW LEAKAGE CURRENT SCHOTTKY DIODE Original PDF
    1N6819R Microsemi LOW LEAKAGE CURRENT SCHOTTKY DIODE Original PDF

    1N681 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N6815

    Abstract: 1N6815R MSASC25H45K MSASC25H45KR MSC1032
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6815 (MSASC25H45K) Features • • • • • • Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability


    Original     		PDF 1N6815 MSASC25H45K) 1N6815) 1N6815R) 1N6815R MSASC25H45KR) MSC1032A 1N6815 1N6815R MSASC25H45K MSASC25H45KR MSC1032

    1N6819

    Abstract: 1N6819R MSASC75W45F MSASC75W45FR VF10 MSC1030
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6819 (MSASC75W45F) PRELIMINARY Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability


    Original     		PDF 1N6819 MSASC75W45F) 1N6819) 1N6819R) MSASC75W45FR) 1N6819 1N6819R MSASC75W45F MSASC75W45FR VF10 MSC1030

    JANTX, JX, JAN

    Abstract: 1N6810UEG2 1N6807 Marking jx 1N6804UEG2
    Text: JAN and JANTX 1N6804UEG2 thru 1N6810UEG2 Vishay Semiconductors Patented* formerly Glass Passivated Rectifiers I I ED MIL TA Reverse Voltage 50 to 1000V Forward Current 1.0A FI DO-214BA UEG2 Q RY UA L 1.7 1.0 Mounting Pad Layout 4.8 3.95 0.066 MIN. (1.68 MIN.)


    Original     		PDF 1N6804UEG2 1N6810UEG2 DO-214BA MIL-PRF-19500/669 constructi6810UEG2 50mVp-p 6-Mar-02 JANTX, JX, JAN 1N6810UEG2 1N6807 Marking jx

    MSASC25W100KV

    Abstract: MSASC25W100K MSASC25W100KS 1N6817 1N6817R MSASC25W100KR PS11
    Text: 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 (MSASC25W100K) 1N6817R Features • • • • • • • • • Tungsten schottky barrier Oxide passivated structure Guard ring protection for increased reverse energy capability


    Original     		PDF 1N6817 MSASC25W100K) 1N6817R 1N6817) 1N6817R) MSASC25W100KV) MSASC25W100KS) MSASC25W100KR) oth17R MSASC25W100KV MSASC25W100K MSASC25W100KS 1N6817 1N6817R MSASC25W100KR PS11

    1N6815

    Abstract: 1N6815R MSASC25H45K MSASC25H45KR PS11 MSASC25H45KS
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6815 (MSASC25H45K) 1N6815R Features • • • • • • • • • Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents


    Original     		PDF 1N6815 MSASC25H45K) 1N6815R 1N6815) 1N6815R) MSASC25H45KV) MSASC25H45KS) MSASC25H45KReters MSC1458A 1N6815 1N6815R MSASC25H45K MSASC25H45KR PS11 MSASC25H45KS

    1N6817

    Abstract: 1N6817R MSASC25W100K MSASC25W100KR
    Text: 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 (MSASC25W100K) 1N6817R PRELIMINARY Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability


    Original     		PDF 1N6817 MSASC25W100K) 1N6817R 1N6817) 1N6817R) MSASC25W100KR) VolSASC25W100KR) MSC1034A IR125 1N6817 1N6817R MSASC25W100K MSASC25W100KR

    1N6818

    Abstract: 1N6818R MSASC75H45F MSASC75H45FR VF10
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6818 (MSASC75H45F) PRELIMINARY Features • • • • • • Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability


    Original     		PDF 1N6818 MSASC75H45F) 1N6818) 1N6818R) MSASC75H45FR) 1N6818 1N6818R MSASC75H45F MSASC75H45FR VF10

    1n6804

    Abstract: 1N6809 DO-214BA JAN1N6804UEG2 JAN1N6810UEG2 1N6810 1N681
    Text: Q UA LI JAN1N6804UEG2 thru 1N6810UEG2 ED MIL I RY FI TA Glass Passivated Rectifiers DO-214BA UEG2 1.7 1.0 4.8 3.95 .41 .15 Reverse Voltage 50 to 1000V Forward Current 1.0A Dimensions in millimeters Glass-plastic encapsulation technique is covered by


    Original     		PDF JAN1N6804UEG2 JAN1N6810UEG2 DO-214BA DO-214BA, 50mVp-p 1n6804 1N6809 DO-214BA JAN1N6810UEG2 1N6810 1N681

    msc diode

    Abstract: 2N2708 Sertech Labs mrf892 1N6815 Microsemi New MOSFETs MS1631 2N4033 "RF MOSFETs" 15KW
    Text: Fall 1998/Winter 1999 conditioning ThinKey Package in Production Microsemi's Santa Ana division is now in production on a complete line of hermetic rectifiers. These devices are offered in the Microsemi patented ThinKey package with RθJC ratings as low as 0.2oC/W. Available in strap to


    Original     		PDF 1998/Winter 1N6815, 1N6817, 1N6818, 1N6820, 1N6821, 1N6823, MSAQX15G60K MSAQX25G60G MSAQX35G60L msc diode 2N2708 Sertech Labs mrf892 1N6815 Microsemi New MOSFETs MS1631 2N4033 "RF MOSFETs" 15KW

    marking jc ja jd

    Abstract: 1n6804 1N6806 1N6805 1N6807 88654 DO-214BA JAN1N6804UEG2 JAN1N6810UEG2 1N6809
    Text: JAN1N6804UEG2 thru 1N6810UEG2 Vishay Semiconductors Patented* formerly Glass Passivated Rectifiers I I ED MIL TA Reverse Voltage 50 to 1000V Forward Current 1.0A FI DO-214BA UEG2 Q RY UA L 1.7 1.0 Mounting Pad Layout 4.8 3.95 0.066 MIN. (1.68 MIN.)


    Original     		PDF JAN1N6804UEG2 JAN1N6810UEG2 DO-214BA MIL-PRF-19500/669 50mVp-p 26-Mar-02 marking jc ja jd 1n6804 1N6806 1N6805 1N6807 88654 DO-214BA JAN1N6810UEG2 1N6809

    IRF9730

    Abstract: any circuit using irf830 battery charger "mcv 7" LTC1325 IRF973 1N6818 IRF9531 IRFZ34 LTC1325CN LTC1325CSW
    Text: LTC1325 Microprocessor-Controlled Battery Management System U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Fast Charge Nickel-Cadmium, Nickel-Metal-Hydride, Lithium Ion or Lead-Acid Batteries under µP Control Flexible Current Regulation:


    Original     		PDF LTC1325 111kHz 10-Bit 152mm) 254mm) LT1512 IRF9730 any circuit using irf830 battery charger "mcv 7" LTC1325 IRF973 1N6818 IRF9531 IRFZ34 LTC1325CN LTC1325CSW

    ST CHN 510

    Abstract: chn 714 chn 725 CHN 725 diode CHN 520
    Text: • Microsemi m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology 1N6815 (MSASC25H45K) Features 1N6815R Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents


    OCR Scan     		PDF 1N6815 MSASC25H45K) 1N6815R 1N6815) 1N6815R) MSASC25H45KR) MSC1032A ST CHN 510 chn 714 chn 725 CHN 725 diode CHN 520

    Untitled

    Abstract: No abstract text available
    Text: Micmsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6819 (MSASC75W45F) Features Oxide passivated structure for very low leakage currents;!? Guard ring protection for increased reverse energy c


    OCR Scan     		PDF 1N6819 MSASC75W45F) 1N6819) 1N6819R)

    Untitled

    Abstract: No abstract text available
    Text: Micmsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6818 (MSASC75H45F) Features V R if Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy c


    OCR Scan     		PDF 1N6818 MSASC75H45F) 1N6818) 1N6818R)

    Untitled

    Abstract: No abstract text available
    Text: • Microsemi m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology MSASC25W45K (1N6816) MSASC25W45KR (1N6816R) Features Tungsten schottky barrier Oxide passivated structure for very low leakage currents


    OCR Scan     		PDF MSASC25W45K 1N6816) MSASC25W45KR 1N6816R) s25W45K

    Untitled

    Abstract: No abstract text available
    Text: • Microsemi m m Santa Ana, CA m 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology (MSASC25W100K) Features <ide p a s d v M e d structure fa r v«ry low le akage currents mrd ring protection to r in c re ^ |e d reverse- energy c a p a b it y i


    OCR Scan     		PDF 1N6817 MSASC25W100K) 1N6817) 1N6817R) MSC1034A

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


    OCR Scan     		PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    1N5822 ss24

    Abstract: 1N5819 SS14 1N5822 SS34 melf 6060V 1n6817 MBR2
    Text: SCHOTTKY RECTIFIERS PART NUMBERING SYSTEM Part numbering system for all parts excluding JEDEC registered and industry standard parts. 1. SURFACE-MOUNT 2. AXIAL AGL41 -Y Y a SMX SSXY - ZZZZ 3. POWER PACKAGES cont'd) A A A B X X Y Y P P - ZZZZ XX=Forward Current (in Amps)


    OCR Scan     		PDF AGL41 O-263 MBR2060CT MBR2545CT MBR2550CT MBR2560CT SBL2030PT SBL2040PT O-247AD SBL3030PT 1N5822 ss24 1N5819 SS14 1N5822 SS34 melf 6060V 1n6817 MBR2