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    1N6819 Search Results

    1N6819 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N6819 Microsemi LOW LEAKAGE CURRENT SCHOTTKY DIODE Original PDF
    1N6819R Microsemi LOW LEAKAGE CURRENT SCHOTTKY DIODE Original PDF

    1N6819 Datasheets Context Search

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    1N6819

    Abstract: 1N6819R MSASC75W45F MSASC75W45FR VF10 MSC1030
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6819 (MSASC75W45F) PRELIMINARY Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability


    Original     		PDF 1N6819 MSASC75W45F) 1N6819) 1N6819R) MSASC75W45FR) 1N6819 1N6819R MSASC75W45F MSASC75W45FR VF10 MSC1030

    Untitled

    Abstract: No abstract text available
    Text: Micmsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6819 (MSASC75W45F) Features Oxide passivated structure for very low leakage currents;!? Guard ring protection for increased reverse energy c


    OCR Scan     		PDF 1N6819 MSASC75W45F) 1N6819) 1N6819R)

    1N6819

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER RECTIFIERS OPERATING TEMPERATURE RANGE 20V to 45V: - 6 5 ° C t o + 125°C 50V to 60V: - 6 5 ° C t o + 1 5 0 °C STORAGE TEMPERATURE - 6 5 ° C to + 1 5 0 °C SURGE PART NUMBER Maximum Peak Reverse Voltage Maxim um Average Rectified Current


    OCR Scan     		PDF AMPERE-SCH0TTKY/D0-41 1N5817 1N5818 1N6819 SR102 SR103 SR104 SR105 SR106 MPERES-SCHOTTKY/DO-201