Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-052
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-052
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UTC1N60
Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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OT-223
O-220
O-220F
O-251
O-252
QW-R502-052
UTC1N60
1N60L
1N60GA
1N60G
1N60 mosfet
to126 mosfet
mosfet 12A 600V
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mosfet 1N60
Abstract: 1n60 1N60 TO92
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-052
mosfet 1N60
1n60
1N60 TO92
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
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1n60b
Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
1n60b
1N60 diode
1N60 mosfet
1N60A
600V 2A SOT223 MOSFET N-channel
1N60G
1N60-B
1N60
diode 1n60
UTC1N60
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1n60
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
1n60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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1N60-KW
1N60-KW
QW-R205-054
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1n60
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-252
O-220
QW-R502-052
1n60
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1N60 MOSfet
Abstract: 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-220
QW-R502-052
1N60 MOSfet
1N60 diode
1N60-TM3-T
1N60
diode 1n60
1N60-TA3-T
c25 diode to220
c25 mosfet
1N60L-TF3-T
1N60L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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O-220F2
OT-223
O-220
O-220F
QW-R502-052
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2A 600V N-CHANNEL MOSFET 1 FEATURES TO- 251 * Typical RDS ON =9.3Ω@VGS = 10V. * Avalanche rugged technology * Low gate charge (typical 5.0nC) * Low Crss (typical 3.0 pF) * 100% avalanche tested * Excellent switching characteristics
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O-220
1N60L
1N60-TA3-T
1N60L-TA3-T
1N60-TM3-T
1N60L-TM3-T
1N60-TN3-R
1N60L-TN3-R
1N60-TN3-T
1N60L-TN3-T
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600V 2A SOT223 MOSFET N-channel
Abstract: 1n60b 1n60 diode T92 DIODE 1N60 mosfet MOSFET 50V 100A TO-220 1N60 TO92 diode 1n60 Diode AA3 1N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)
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OT-223
O-220
QW-R502-052
600V 2A SOT223 MOSFET N-channel
1n60b
1n60 diode
T92 DIODE
1N60 mosfet
MOSFET 50V 100A TO-220
1N60 TO92
diode 1n60
Diode AA3
1N60G
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1N60 mosfet
Abstract: 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)
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OT-223
O-220
QW-R502-052
1N60 mosfet
1N60B
diode 1n60
1N60G
1N60L
1n60 diode
mosfet 1N60
1N60
Diode Equivalent 1N60
1N60 TO92
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SMD 1N60
Abstract: SMD 1N60 diode 6072a 1N56 1N60 diode SMD 6072A TUBE 1N6072 diode 1n60 sod6 package 1N60 MOS
Text: rz j S G S -T H O M S O N ^ 7£ 1N 5634A /1N 5665A 1N 6040A /1N 6072A TRANSIL FEATURES • PEAK PULSE POWER= 1500 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 11V to 200 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps 0 V to VBR .
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CB472.
CB473.
DIL20
T0220AB
7TBT237
SMD 1N60
SMD 1N60 diode
6072a
1N56
1N60 diode SMD
6072A TUBE
1N6072
diode 1n60
sod6 package
1N60 MOS
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Diode Equivalent 1N60
Abstract: No abstract text available
Text: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. 1 3 1-Gate PAD 3-Source PAD ¾ Advanced termination scheme to provide enhanced voltageblocking capability.
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3VD186600YL
3VD186600YL
O-251-3Ltype
250uA
Diode Equivalent 1N60
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Untitled
Abstract: No abstract text available
Text: 3VD173600YL 3VD173600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD173600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced
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3VD173600YL
3VD173600YL
O-92-3L
5245dies/wafer
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Diode Equivalent 1N60
Abstract: 1N60 MOS 1N60 SILAN diode 1n60 1N60 silan
Text: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified
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3VD186600YL
3VD186600YL
O-251-3Ltype
Diode Equivalent 1N60
1N60 MOS
1N60 SILAN
diode 1n60
1N60
silan
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Diode Equivalent 1N60
Abstract: diode 1n60 1N60 MOS 1N60
Text: 3VD169600YL 3VD169600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD169600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced
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3VD169600YL
3VD169600YL
O-92-3L
Diode Equivalent 1N60
diode 1n60
1N60 MOS
1N60
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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1N60 mosfet
Abstract: MOSFET 300V SOT-89 Power MOSFET 50V 10A FHK1N60 mosfet 300V 10A mosfet 1N60
Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK1N60 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-89 The FHK1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
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FHK1N60
OT-89
FHK1N60
OT-89
50VRG
1N60 mosfet
MOSFET 300V SOT-89
Power MOSFET 50V 10A
mosfet 300V 10A
mosfet 1N60
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1N60 mosfet
Abstract: No abstract text available
Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK7N60 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 TO-220F The FHK7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
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FHK7N60
O-220F
FHK7N60
O-220F
50VRG
1N60 mosfet
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8N65
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices
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IC-PPCN-110605
Jun-29-2011
QR-0205-02
8N65
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