Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    3VD173600YL Search Results

    3VD173600YL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3VD173600YL

    Abstract: 1N60 MOS 1N60
    Text: 3VD173600YL 3VD173600YL 高压MOSFET芯片 描述 ¾ 3VD173600YL为采用硅外延工艺制造的N沟道 增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；


    Original     		PDF 3VD173600YL 3VD173600YL 3VD173600YLN 600VMOS O-92-3L 5245dies/wafer 250AVDS 30VVDS 1N60 MOS 1N60

    Untitled

    Abstract: No abstract text available
    Text: 3VD173600YL 3VD173600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD173600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced


    Original     		PDF 3VD173600YL 3VD173600YL O-92-3L 5245dies/wafer