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    1N60 DIODE Search Results

    1N60 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1N60 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N60 germanium diode

    Abstract: germanium diode 1N60 041 germanium DIODE 1N60 diode 1N60H selenium diode 1n60 germanium diode GOLD diode 041
    Text: 1N60 GOLD BONDED GERMANIUM DIODE 0.41 Diodes Germanium and Selenium . Page 1 of 1 Enter Your Part # Home Part Number: 1N60 Online Store 1N60 Diodes GOLD BONDED GERMANIU M DIODE Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    com/1n60 1N60 germanium diode germanium diode 1N60 041 germanium DIODE 1N60 diode 1N60H selenium diode 1n60 germanium diode GOLD diode 041 PDF

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    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    QW-R502-052 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    QW-R502-052 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    QW-R502-052 PDF

    UTC1N60

    Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    OT-223 O-220 O-220F O-251 O-252 QW-R502-052 UTC1N60 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V PDF

    mosfet 1N60

    Abstract: 1n60 1N60 TO92
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    QW-R502-052 mosfet 1N60 1n60 1N60 TO92 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    QW-R502-052 PDF

    1n60b

    Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    QW-R502-052 1n60b 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60 PDF

    1n60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    QW-R502-052 1n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    1N60-KW 1N60-KW QW-R205-054 PDF

    1n60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    O-252 O-220 QW-R502-052 1n60 PDF

    1N60 MOSfet

    Abstract: 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    O-220 QW-R502-052 1N60 MOSfet 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    O-220F2 OT-223 O-220 O-220F QW-R502-052 PDF

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6043 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


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    1N6043 /10x1000Â 10x160Â 10x1000 10x1000Â PDF

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    Abstract: No abstract text available
    Text: Part: 1N6036 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


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    1N6036 /0x1000Â 10x160Â 10x1000 10x1000Â PDF

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6055A Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


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    1N6055A 10x1000Â 10x160Â 10x1000 PDF

    diode 1n6045

    Abstract: No abstract text available
    Text: Part: 1N6045 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


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    1N6045 /10x1000Â 10x160Â 10x1000 10x1000Â diode 1n6045 PDF

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    Abstract: No abstract text available
    Text: Part: 1N6068 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


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    1N6068 10x160Â 10x1000 10x1000Â PDF

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6053 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


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    1N6053 /10x1000Â 10x160Â 10x1000 10x1000Â PDF

    diode 1n60

    Abstract: 1N60 diode
    Text: Part: 1N6040 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


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    1N6040 10x1000Â 10x160Â 10x1000 diode 1n60 1N60 diode PDF

    1N6042

    Abstract: 1N6069 1N6052A 1N6053A diode 1n60 1N6058A 1N6038 1N6049 1N6054 1N6055A
    Text: Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series FEATURES 6 • Hermetically sealed SILICON DIODE ARRAYS • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability


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    DO-13 1N6069A* 1N6070 1N6070A 1N6071* 1N6071A* 1N6072 1N6072A 1N6042 1N6069 1N6052A 1N6053A diode 1n60 1N6058A 1N6038 1N6049 1N6054 1N6055A PDF

    1N60 diode

    Abstract: diode 1n60 1N60 1N60 Schottky 1N60 diode resistance 1N60P Diode Equivalent 1N60
    Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter


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    1N60/1N60P 1N60P 200mA Fax0755-8324 1N60 diode diode 1n60 1N60 1N60 Schottky 1N60 diode resistance 1N60P Diode Equivalent 1N60 PDF

    1n60 diode

    Abstract: 1n60 1N60P diode 1n60 1N60 Schottky DIODE 1n60p
    Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter


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    1N60/1N60P 1N60P 200mA 1-Sep-2009 1n60 diode 1n60 diode 1n60 1N60 Schottky DIODE 1n60p PDF

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6047 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


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    1N6047 /10x1000Â 10x160Â 10x1000 10x1000Â PDF