1N6052A Search Results

Contextual Info: Transient Voltage Suppressors Breakdown Voltage @ Test Current 1500 W Part No. 1N6039A 1N6040A 1N6041A 1N6042A 1N6043A 1N6044A 1N6045A 1N6046A 1N6047A 1N6048A 1N6049A 1N6050A 1N6051A 1N6052A 1N6053A 1N6054A 1N6055A 1N6056A 1N6057A 1N6058A 1N6059A 1N6060A 1N6061A

Contextual Info: 1N6052A+JANTXV Diodes Bidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage36 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage30 I(PPM) Max.(A)Pk.Pulse Current30.0

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

IN6052A

Abstract: 1N6062A in6064a 1N6072A 1N6041A 1N6053A in60 1N6054A 1N6045A 1N6039A
Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients

Contextual Info: 1N6036 - 1N6072A series 1N6036 - 1N6072A IN60 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) FEATURES • Stand-off voltage range 6.8 - 200 Volts • Glass Passivated Junction 31.8Min

1N6072A

Abstract: 1N6066A
Contextual Info: 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES DO-13 The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients can permanently damage sensitive components. Because o f their high surge capability

1N6054

Abstract: hybrid gas arrester 1N60 1N6036 1N6036A 1N6037 1N6037A 1N6038 1N6038A 1N6072A
Contextual Info: Tr a n s i e n t V o l t a g e S u p p r e s s i o n T V S D i o d e s 1N6036 – 1N6072A Series Invisible Protection MAXIMUM RATINGS When no problems exist, Crydom TVS • Peak pulse power (PPK): Diodes are totally invisible to the circuits 1500 watts (10 X 1000 µs)

Contextual Info: Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series FEATURES 6 • Hermetically sealed SILICON DIODE ARRAYS • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Low zener impedance • 100% surge tested

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

1N6055A JANTX

Abstract: 1N6041A 1N6047A JAN 1N6036A JANTXV JAN 1N6039 1N6036 1N6036A 1N6072 1N6072A IEC61000-4-4
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 1500 WATT BIDIRECTIONAL

1N6059

Abstract: 1N6055A JANTX 1N6036A 1N6037A 1N6038A 1N6039A 1N6072A VQE 21 d 452a
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 November 2007. INCH-POUND MIL-PRF-19500/507E 7 August 2007 SUPERSEDING MIL-PRF-19500/507D 8 August 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT

1N6066 thomson

Abstract: lpp 68 g1 don connex 6064A 1N6036
Contextual Info: S G S —THOMSON S'ìC 59C ^ T H O M S O 02625 D 1I 7^ 237 GGG2b25 D 7 > //-£3 ’ N - C S F 1 1 M 6 0 3 6 ,A — DIVISION SEMICONDUCTEURS ► 1 IM 6 0 7 2 ,A BIDIRECTIONAL TR A N S IE N T V O L T A G E S U P P R E S S O R S DIODES DE PROTECTION BIDIRECTIONNELLES

1N6071A JANTX

Contextual Info: 1N6036 A * thru 1N6072(A)* Available on commercial versions 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/507 DESCRIPTION This popular Transient Voltage Suppressor (TVS) series for 1N6036 thru 1N6072A are JEDEC

MN6054

Abstract: 1N6066A
Contextual Info: 1 N6 0 3 6 - 1 N 6 0 7 2 A series IN 60 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (h e rm e tica lly sealed p a c k a g e fo r harsh industrial environm ents) FEATURES «Stand-off voltage range 6.8 - 200 Volts •G lass Passivated Junction

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients

Contextual Info: im ia s T o t. . TransZorb QUICK REFERENCE GUIDE PROVIDING PROTECTION FOR :• • Telecommunications &:7S$ ' • Military ÌH • Computer • Industrial ■\. '’ • . .Test & Vyt. I\\ Instrumentation • Medical • Automotive A General Industriès, Inc.

Contextual Info: GENL IN S TR / 5bE POlilER General ^ ^ Semiconductor ^ • Industries, Inc. 30Tni37 T-J/-23 THRU MECHANICAL CHARACTERISTICS DESCRIPTION • Body marked w ith Logo «J* and type number ELECTRICAL CHARACTERISTICS Clamping Factor 1.33 at full rated power 1.20 at 50% rated power

1N6042

Abstract: 1N6069 1N6052A 1N6053A diode 1n60 1N6058A 1N6038 1N6049 1N6054 1N6055A
Contextual Info: Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series FEATURES 6 • Hermetically sealed SILICON DIODE ARRAYS • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability

sm 6136 b

Abstract: CD6283A D6283 9452 TVS 1N6156A
Contextual Info: Transient Voltage Suppressors P art N um ber M icrosem i D ivision P ackage O utline Type M il i Data S pec ¡ S h e e t ID Ppp W Micmsemi Pulse j Vwm T y p e ; (V) Ipp (A) VB R (V) Vc (V) ID Toi. (uA ) .<+/•%). C D6283A Scottsdale CELLULAR DIE 6168 1500

TYPE TO 092 Package pic

Abstract: MN6062
Contextual Info: Microísemi Corp. 1N 6036 thru 1 N 6 07 2A V T he <}<ode experts SANTA ANA, CA SCOTTSDALE, AZ F or m o r e in fo r m a tio n call: 6 0 2 941-6300 FEA TU RES • 1500 WATTS PEAK POWER DISSIPATION • AVAILABLE IN STANDOFF VOLTAGES FROM 5.5V TO 185V • 00-13 HERMETICALLY SEALED PACKAGE

Contextual Info: 1500 WATT BI-POLAR TRANSIENT VOLTAGE 1N6036 THRU 1N6072 SUPPRESSOR DIODES DO-13 CASE FEATURES: 5.5 thru 185 Volts The 1N6036 Series of voltage transient suppressor di­ odes are designed to protect electronic equipment from failure due to voltage transients. Their avalanche charac-

n6055

Abstract: 1N60 LL 34 N6045A N6037
Contextual Info: N 6 0 3 6 - 1 N 6 0 7 2 A s e r i e s IN60 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) FEATURES •* Stand-off voltage range 6.8 - 200 Volts * Glass Passivated Junction - Excellent clamping capability

1N6066A

Contextual Info: Back to Zener Diodes 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES DO-13 The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients