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    DIODE GEN PURP 70V 200MA DO35
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    DIODE GEN PURP 70V 200MA DO213AA
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    DIODE GEN PURP 70V 200MA DO35
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    DIODE GEN PURP 70V 200MA DO213AA
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    1N5194 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N5194 Microsemi GENERAL PURPOSE SILICON DIODE Original PDF
    1N5194 Microsemi LL-35 High Voltage - Current Low Leakage Glass Diodes Original PDF
    1N5194 APD Semiconductor Planar Diodes Scan PDF
    1N5194 BKC International 70 V, 500 mW silicon diode Scan PDF
    1N5194 Microsemi General Purpose Silicon Diodes Scan PDF
    1N5194 Microsemi Data Book 1983 Scan PDF
    1N5194 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5194 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N5194 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5194 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5194 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N5194+JAN Defense Electronics Supply Center 200mA Iout, 80V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N5194+JANTX Defense Electronics Supply Center 200mA Iout, 80V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N5194.TR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5194UR Compensated Devices GENERAL PURPOSE SILICON DIODES Original PDF
    1N5194UR Microsemi High Voltage/Current Low Leakage Glass Diode Original PDF

    1N5194 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dc dc for CDI Circuit

    Abstract: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 DO-213AA LL34
    Text: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MIL-PRF-19500/118 650mA IN5194UR IN5196UR, dc dc for CDI Circuit 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 DO-213AA LL34

    LL-35

    Abstract: DO-213AA glass mini melf diode 1N5194 1N5194UR 1N5195 1N5196 1N5196UR
    Text: 1N5194UR thru 1N5196UR LL-35 High Voltage / Current Use Advantages Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.


    Original     		PDF 1N5194UR 1N5196UR LL-35 DO-213AA 100mA 1N5194 1N5195 1N5196 DO-213AA glass mini melf diode 1N5194 1N5194UR 1N5195 1N5196 1N5196UR

    lN5401

    Abstract: 4B20Y 4B10Y 4B40Y 1n4953 ln5400 E100S2 1N1088 PX4A01 1N3231
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 1N5179 1N4512 1N415S 1N4953 BAT18 S218 5 1.0m 10m 100m 100m 100m 100m 10 15 BAQ33 BAQ34 1N458B 1N5194 OR50 BAQ35 BAY135 1N5195 1N519S OR25 ~:s120 20


    Original     		PDF 1N5179 1N4512 1N415S 1N4953 BAT18 01FSO 01NSO 1N4005 1N4005L 1N3251 lN5401 4B20Y 4B10Y 4B40Y ln5400 E100S2 1N1088 PX4A01 1N3231

    1N5194

    Abstract: No abstract text available
    Text: FEATURES 1N5194 • • • • • 1N5194 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS:


    Original     		PDF 1N5194 1N5194 MIL-PRF-19500/118 500mW 200mA MILPRF-19500/118 DO-35

    1N5194

    Abstract: 1N5195 1N5196
    Text: 1N5194 1N5195 1N5196 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA


    Original     		PDF 1N5194 1N5195 1N5196 MIL-PRF-19500/118 100mA IN5194 IN5196 1N5194 1N5195 1N5196

    Untitled

    Abstract: No abstract text available
    Text: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE INJAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MIL-PRF-19500/118 650mA IN5194UR IN5196UR,

    1N5196

    Abstract: 1N5194 JANTX 1N5194 1N5195
    Text: 1N5194 1N5195 1N5196 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA


    Original     		PDF 1N5194 1N5195 1N5196 MIL-PRF-19500/118 100mA IN5194 IN5196 1N5196 1N5194 JANTX 1N5194 1N5195

    CDLL5195

    Abstract: CDLL5196 DO-213AA LL34 1N5194UR 1N5195UR 1N5196UR CDLL5194
    Text: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MIL-PRF-19500/118 650mA IN5194UR IN5196UR, CDLL5195 CDLL5196 DO-213AA LL34 1N5194UR 1N5195UR 1N5196UR CDLL5194

    Untitled

    Abstract: No abstract text available
    Text: FEATURES 1N5194UR • 1N5194UR AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL5194, CDLL5194, & MLL5194 MAXIMUM RATINGS AT 25 °C


    Original     		PDF 1N5194UR 1N5194UR LL5194, CDLL5194, MLL5194 500mW 200mA MILPRF-19500/118 DO-213AA

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    DSAIH0002559

    Abstract: No abstract text available
    Text: DO-35 High Voltage I Current Use Advantages 1N5194 thru 1N5196 I Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.


    OCR Scan     		PDF DO-35 1N5194 1N5196 DO-213AA 1N5195 200mAdc, 1N5194/95/96 DSAIH0002559

    q292

    Abstract: 100C 1N3595 1N3595-1 1N5194 1M3595-1 BKC International MIL-STD-202 METHOD 208 ir2150e
    Text: B K C INTERNATIONAL 30E D • 117*Hfl3 D0G0350 1 « T ' 0 \ - 0 \ BKC IN TE RNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, M A 01841 TEL NO. 508 681-0392 EN GI N E E R I N G D A T A SHEET TYPE 1N5194 M E T A L L U R G I A L L Y BONDED, SI LICON PLANAR DIODE, DO UB LE PLUG CO NS TR UC TI ON


    OCR Scan     		PDF D0G0350 1N5194 200mA 250mW 100mA 4031-B MIL-STD-750 q292 100C 1N3595 1N3595-1 1N5194 1M3595-1 BKC International MIL-STD-202 METHOD 208 ir2150e

    BKC Semiconductors

    Abstract: No abstract text available
    Text: DO-35 High Voltage I Current Use Advantages 1 1N5194 thru 1N5196 Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.


    OCR Scan     		PDF DO-35 1N5194 1N5196 DO-213AA 1N5195 200mAdc, 1N5194/95/96 BKC Semiconductors

    diode 483b

    Abstract: 483B BY100 JAN1N marking E 1n diode
    Text: 1N483B thru 1N486B and 1N5194 thru 1N5196 Microsemi Corp. $ The diode e>perts SANTA ANA, CA j F o r m ore in fo rm a tio n call: / SCOTTSDALE, AZ 7I4 979-8220 GENERAL PURPOSE SILICON DIODES FEA TU R ES • • • • V o id le s s h e rm e tic a lly s e a le d g la s s p a c k a g e (DO-35).


    OCR Scan     		PDF 1N483B 1N486B 1N5194 1N5196 DO-35) 1N5194, 1N5196. 1N486B, 1N5194- diode 483b 483B BY100 JAN1N marking E 1n diode

    n5195

    Abstract: JAN1N486B
    Text: 1N483B thru 1N486B and 1N5194 thru 1N5196 M ierosemi Corp. 1 The óiode experts , 71 SMISTA A N A CA F o r m o re in fo rm a tio n cali: 714 979-8220 GENERAL PURPOSE SILICON DIODES FEATURES • • • • • V oidless h e rm e tic a lly s ea led glass p a c k ag e (DO-35).


    OCR Scan     		PDF 1N483B 1N486B 1N5194 1N5196 DO-35) 1N5196 1N5194, N5195, 1N5196. n5195 JAN1N486B

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N4868

    Abstract: 1N233 zener diode 1N429 1N239 1N471 IN753 IN4858 IN4868 diode JAN1N486B 1N47A
    Text: Zener Volt age Zener Type No. 3t 1ZT @ mA Volts S u f f ix A 0 .2 0 MICROSEMI Zener Voltage Tolerance Max. Zener Impedance @ Ur Ohms Power Rating Device Package 150m w C a s e A 8 1 N 2 2 5 ÎD 1N 2 2 6 il ) 1 N 2 2 7 (1 ) 7 .5 • 1 0 .0 9 .0 • 1 2 .0


    OCR Scan     		PDF 1N2250) 1N226I1) 1N227 150mw 1N228C) 1N229C) 1N2301D 1N231C) 1N2320 1N233 1N4868 1N233 zener diode 1N429 1N239 1N471 IN753 IN4858 IN4868 diode JAN1N486B 1N47A

    Untitled

    Abstract: No abstract text available
    Text: SWITCHING DIODES 200mW Part# Peak Voltage Continous Reverse Current VI B V 1N914 1N914A 1N914B I r <"A> 100 100 100 @ Forward Voltage VR (V) 5000 @ 5000 @ 5000 @ Capacitance C Maximum Reverse Recovery Time VF (V) @ lF (mA) <PF) V (n S ) 1.0 1.0 1.0 @ @ @


    OCR Scan     		PDF 200mW 1N914 1N914A 1N914B 500mW 1N4148 1N4151 1N4154 1N4448 1N4454

    AMERICAN POWER DEVICES 1n914

    Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
    Text: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V


    OCR Scan     		PDF DO-35 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619 1N890 1N914 AMERICAN POWER DEVICES 1n914 1N5209 1N3064

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    DIODE 1N649

    Abstract: 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
    Text: M ilitary Q ualifications Q u a l i f i e d Par ts Part Number Qual Level Page Part Number Qual Level Page 1N270 JAN, JAN TX, JAN TX V 32 1N4454/1N4454-1 JAN, JA N TX , JA N TX V 11 1N276 JAN, JAN TX, JAN TX V 32 1N 4464 thru 1N4496 JAN, JA N TX , JA N TX V


    OCR Scan     		PDF 1N270 1N276 1N277 1N645/1N645-1 1N647/1N647-1 1N746A-1 1N759A-1 1N914 1N962B-1 1N973B-1 DIODE 1N649 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454

    1N626

    Abstract: 1N658 DSAIH000251 1N661
    Text: K C • IN T E R N A T IO N A L BKC 2000 Series 30E * D ■ 1171163 Max avg Rectified Current l0 (l0 ) Max Power Disslpation-(PQ) Forward Voltage Drop (VF) Volts mA mW Volts mA BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 1N659 1N660 20 25 60


    OCR Scan     		PDF DO-35 BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 DSAIH000251 1N661

    in5242

    Abstract: 1N5102 in5227 in5239 IN5228 IN5240 MZ240 IN5238 1N5104 IN5226
    Text: Zener Voltage at I zt Volts @ mA Zener Type No. Max. Zener Impedance @ I zt Ohms Zener Voltage Tolerance Power Rating 3 w att " " 1 N 51 02 1 N 51 03 1 N 51 04 180.0 190.0 200.0 4.0 8 50 .0 900.0 950.0 ±5% 1 N 51 05 1 N 51 06 1 N 51 07 220.0 240.0 260.0 3.0


    OCR Scan     		PDF 1N5102 1N5103 1N5104 1N5105 1N5106 1N5107 1N5108 1N5109 1N5110 1N5111 in5242 in5227 in5239 IN5228 IN5240 MZ240 IN5238 IN5226