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    1N5196UR Price and Stock

    Microchip Technology Inc 1N5196UR

    DIODE GP 225V 200MA DO213AA
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    Microchip Technology Inc 1N5196UR 22 Weeks
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    Microchip Technology Inc 1N5196UR-TR

    DIODE GP 225V 200MA DO213AA
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    Microchip Technology Inc JAN1N5196UR

    DIODE GP 225V 200MA DO213AA
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    Microchip Technology Inc JAN1N5196UR 23 Weeks
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    Microchip Technology Inc JAN1N5196UR-TR

    SIGNAL OR COMPUTER DIODE
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    VPT Components JANTX1N5196UR/US

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    1N5196UR Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5196UR Compensated Devices GENERAL PURPOSE SILICON DIODES Original PDF
    1N5196UR Microsemi High Voltage/Current Low Leakage Glass Diode Original PDF

    1N5196UR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    dc dc for CDI Circuit

    Abstract: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 DO-213AA LL34
    Text: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MIL-PRF-19500/118 650mA IN5194UR IN5196UR, dc dc for CDI Circuit 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 DO-213AA LL34 PDF

    LL-35

    Abstract: DO-213AA glass mini melf diode 1N5194 1N5194UR 1N5195 1N5196 1N5196UR
    Text: 1N5194UR thru 1N5196UR LL-35 High Voltage / Current Use Advantages Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.


    Original     		1N5194UR 1N5196UR LL-35 DO-213AA 100mA 1N5194 1N5195 1N5196 DO-213AA glass mini melf diode 1N5194 1N5194UR 1N5195 1N5196 1N5196UR PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE INJAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MIL-PRF-19500/118 650mA IN5194UR IN5196UR, PDF

    1N5196UR

    Abstract: CDLL5196 DO-213AA LL5196
    Text: FEATURES 1N5196UR • 1N5196UR AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL5196, CDLL5196, & MLL5196 MAXIMUM RATINGS AT 25 °C


    Original     		1N5196UR 1N5196UR LL5196, CDLL5196, MLL5196 500mW 200mA MILPRF-19500/118 DO-213AA CDLL5196 LL5196 PDF

    CDLL5195

    Abstract: CDLL5196 DO-213AA LL34 1N5194UR 1N5195UR 1N5196UR CDLL5194
    Text: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MIL-PRF-19500/118 650mA IN5194UR IN5196UR, CDLL5195 CDLL5196 DO-213AA LL34 1N5194UR 1N5195UR 1N5196UR CDLL5194 PDF

    1N5196UR

    Abstract: DO-213AA
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SWITCHING DIODE – METALLURGICALLY BONDED – HERMETICALLY SEALED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/118


    Original     		MIL-PRF-19500/118 1N5196UR 500mW 200mA MIL-PRF-19500/118 DO-213AA LDS-0036 1N5196UR PDF

    1N483B

    Abstract: 1N485B 1N486B 1N5194 1N5194UR 1N5195 1N5195UR
    Text: INCH-POUND MIL-PRF-19500/118J w/AMENDMENT 1 11 July 2010 SUPERSEDING MIL-PRF-19500/118J 27 March 2008 The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 October 2010. PERFORMANCE SPECIFICATION SHEET


    Original     		MIL-PRF-19500/118J 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR, 1N483B 1N485B 1N486B 1N5194 1N5194UR 1N5195 1N5195UR PDF

    Untitled

    Abstract: No abstract text available
    Text: INCH-POUND MIL-PRF-19500/118H 19 July 2007 SUPERSEDING MIL-PRF-19500/118G 22 June 2006 The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 October 2007. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,


    Original     		MIL-PRF-19500/118H MIL-PRF-19500/118G 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR, PDF