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    1N5060 DIODE Search Results

    1N5060 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    1N5060 DIODE Price and Stock

    Diotec Semiconductor AG 1N5060

    Diode - DO-15 - 400V - 2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5060
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    1N5060 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N5060

    Abstract: No abstract text available
    Text: 1N5060 Passivated Rectifier. Repetitive Peak Reverse Voltage 400 V. Average Forward . Page 1 of 1 Enter Your Part # Home Part Number: 1N5060 Online Store 1N5060 Diodes Passivated Rectifier. Repetitive Peak Reverse Voltage Transistors 400 V. Average Forward Current 25deg Ambient 2.5 A.


    Original     		1N5060 1N5060 25deg DO-204AP com/1n5060 PDF

    1N5060

    Abstract: No abstract text available
    Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current


    Original     		1N5059, 1N5060, 1N5061, 1N5062 OD-57 MIL-STD-750, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 1N5060 PDF

    1N5062 diode

    Abstract: 1N5060 1N5061 1N5061 vishay
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 1N5060 1N5062 diode 1N5061 vishay PDF

    DIODE 1N5060

    Abstract: 1n5060v 1N5060 Sinterglass 1N5061 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 18-Jul-08 DIODE 1N5060 1n5060v 1N5060 Sinterglass 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current


    Original     		1N5059, 1N5060, 1N5061, 1N5062 OD-57 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    1n5062 equivalent

    Abstract: 1N5059 diode 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55
    Text: BYW52.BYW56 Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060


    Original     		BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062 1n5062 equivalent 1N5059 diode 1N5060 1N5062 BYW52 BYW53 BYW54 BYW55 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N5059-1N5062 STANDARD AVALANCHE SINTERGLASS DIODE MAXIMUM RATINGS Parameter Test condition Sub type Symbol Value 1N5059 1N5060 Reverse voltage = repetitive peak reverse voltage 1N5061 400 VR = VRRM Average forward current 800 tp = 10ms, half sinewave


    Original     		1N5059-1N5062 1N5059 1N5060 1N5061 1N5062 OD-57, OD-57 MIL-PRF-19500, PDF

    1n5060

    Abstract: 1N5062 diode 1N5061 DIODE 1N5060 1N506
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 1N5060 1N5062 diode DIODE 1N5060 1N506 PDF

    1n5062 equivalent

    Abstract: 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56
    Text: BYW52.BYW56 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060


    Original     		BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062 1n5062 equivalent 1N5060 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56 PDF

    LN5061

    Abstract: A14P Rectifier 1N5059 A14B A14B A14P diode A14B LN5060 ln5062 1N5059 1N5060
    Text: Passivated Rectifier A14 SERIES 1N5059 1N5060 1N5061 1N5062 A14P TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­ VIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT


    OCR Scan     		1N5059 1N5060 400Mm. LN5061 A14P Rectifier 1N5059 A14B A14B A14P diode A14B LN5060 ln5062 1N5059 1N5060 PDF

    in5062

    Abstract: A14P
    Text: 74 729 4 62 1 POWEREX INC T - °t ~i 3 tEJ7amtai naoiasi Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 1N5062 AMP THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­


    OCR Scan     		1N5059 1N5060ion in5062 A14P PDF

    1N5061

    Abstract: A14P A14B IN5059 1N5059 1N5060 1N5062 A14D A14M A14N
    Text: 7294621 POWEREX INC 74 I ieT J 7 5 1 4 1 ,2 1 T- °i~i3 DÜÜ1351 Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­


    OCR Scan     		DDOiaa11] 270Mm 1N5061 A14P A14B IN5059 1N5059 1N5060 1N5062 A14D A14M A14N PDF

    In5062

    Abstract: in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059
    Text: HARRIS SEniCON» SECTOR iü l H iMJ bôE D m 43Dgg71 UÜ5Q3QS 414 • 1N5059, 1N5060 1N5061, 1N5062 a r r is SE.COHOUCTO» 1A, 200V - 800V DÌOdeS December 1993 Package Features • JEDEC STYLE D0-204 TOP VIEW Hlgh-Temperature Metallurglcally Bonded, No Com­


    OCR Scan     		43Dgg71 1N5059, 1N5060 1N5061, 1N5062 MIL-STD-19500 C/10a/ 1N5060, In5062 in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059 PDF

    EQUIVALENT BYD33D

    Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
    Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and


    Original     		PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent PDF

    1n5060v

    Abstract: iSO 15765 1N5059 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode
    Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original     		1N5059 1N5062 OD-57 MIL-STD-750, 1N5059 OD-57 1N5060 1N5061 D-74025 1n5060v iSO 15765 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode PDF

    1N5062V

    Abstract: 1N5062 1N5059 1N5060 1N5061 iso 15765
    Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original     		1N5059 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 D-74025 13-Apr-05 1N5062V 1N5062 1N5060 1N5061 iso 15765 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Description Polarity: Cathode indicated by a band Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading


    Original     		1N5059 1N5062 MILSTD-750, 1N5060 1N5061 1N5062 D-74025 09-Oct-00 PDF

    1N5062V

    Abstract: 1N5059 1N5061 1N5062 DIODE 1N5060 1N5060 500MG 1N5059 diode
    Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original     		1N5059 1N5062 MIL-STD-750, 1N5059 1N5060 1N5061 D-74025 07-Jan-03 1N5062V 1N5061 1N5062 DIODE 1N5060 1N5060 500MG 1N5059 diode PDF

    iSO 15765

    Abstract: 1N5061 1N5062V 1n5062 equivalent 1n5059 1N5062 diode 1N5060 1N5062 DIODE 1N5060 iso 15765 2
    Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original     		1N5059 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 18-Jul-08 iSO 15765 1N5061 1N5062V 1n5062 equivalent 1N5062 diode 1N5060 1N5062 DIODE 1N5060 iso 15765 2 PDF

    1N5062V

    Abstract: 1N5059 1N5060 1N5061 1N5062
    Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original     		1N5059 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 08-Apr-05 1N5062V 1N5060 1N5061 1N5062 PDF

    DIODES BYD

    Abstract: BYD13M BYG50J diodes byw sod91
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers GENERAL-PURPO SE AVALANCHE RECTIFIERS OVERVIEW leaded surface-mount VR SO D 91 SO D 81 SO D 5 7 SO D 57 SO D 6 4 SO D 8 7 S O D 106


    OCR Scan     		BYD11D BYD11J BYD11M BYD13J BYD13M 1N5059 1N5060 1N5061 1N5062 BYD17J DIODES BYD BYG50J diodes byw sod91 PDF

    diode A14A

    Abstract: diode A14A surface mount LN5061 A14P Rectifier A14P A14B LN5060 A14F DT230 A14D 1n5060
    Text: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS


    OCR Scan     		1N5059-62 1N4245-49 1N5624-27 DT230 A14A-P GER4001-7 A114A-M A15A-N A115A-M DT23CF diode A14A diode A14A surface mount LN5061 A14P Rectifier A14P A14B LN5060 A14F A14D 1n5060 PDF

    amper 1N5061

    Abstract: LN5061 A14P Rectifier A14B diode A14A surface mount A14P Amper 1N5060 1n5062 diode A14A surface diode A14B
    Text: FAS T R E C O V E R Y R EC TIFIER S S E LE C T O R GUIDE 2000 1500 1000 900 600 « 700 !j 6 0 0 § 500 s 400 z 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D R EC TIFIER S S E LE C T O R GUIDE


    OCR Scan     		400Mm. amper 1N5061 LN5061 A14P Rectifier A14B diode A14A surface mount A14P Amper 1N5060 1n5062 diode A14A surface diode A14B PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF