Switching
Abstract: 1N3065 1n914 equivalent 1N3605 1N4151 equivalent 1N3062 1N4153 silicon diodes 1N4863 datasheets diode 1n3064 1N3063
Text: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 VRRM V MAX 100 100 75 75 75 75 50 40 75 100
|
Original
|
DO-35
1N914
1N914B
1N3062
1N3063
1N3064
1N3065
1N3600
1N3604
1N3605
Switching
1N3065
1n914 equivalent
1N3605
1N4151 equivalent
1N3062
1N4153 silicon diodes
1N4863
datasheets diode 1n3064
1N3063
|
PDF
|
JX4153
Abstract: JV4153 1N4153-1 1N4153UR-1 1N4534 J-1N4148 diode MARKING CODE jx 337K
Text: INCH-POUND MIL-PRF-19500/337K w/AMENDMENT 2 15 July 2010 SUPERSEDING MIL-PRF-19500/337K w/AMENDMENT 1 25 January 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4153-1, 1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD,
|
Original
|
MIL-PRF-19500/337K
1N4153-1,
1N4153UR-1,
1N4153UB,
1N4153UBCA,
1N4153UBCC,
1N4153UBD,
1N4534,
1N4534UB,
JX4153
JV4153
1N4153-1
1N4153UR-1
1N4534
J-1N4148
diode MARKING CODE jx
337K
|
PDF
|
1N4153
Abstract: LM390
Text: 1N4153 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N4153 Availability Online Store
|
Original
|
1N4153
1N4153
DO-35
STV3208
LM390
|
PDF
|
1N5426
Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current
|
Original
|
00000S3
DO-35
400mW
1N4150
1N4152
1N4153
1N4305
DO-35
1N5426
1N5208
AMERICAN POWER DEVICES 1n914
|
PDF
|
1N4149
Abstract: 1N4150 1N4152 1N4153 1N4154 1N4447 1N4449 1N4454 1N914 ts65
Text: 1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM in c h e s M ax. M in . M ax. -
|
Original
|
1N914
1N4454
1N4149,
1N4447
1N4449
DO-34.
1N4450
1N4451
1N4453
1N4149
1N4150
1N4152
1N4153
1N4154
1N4454
ts65
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature
|
Original
|
1N914.
1N4454
1N4149,
1N4447
1N4449
DO-34.
1N4451
1N4453
|
PDF
|
1n4149
Abstract: 1N4153 silicon diodes 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Text: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature
|
Original
|
1N914.
1N4454
1N4149,
1N4447
1N4449
DO-34.
1N914
1N4453
1n4149
1N4153 silicon diodes
1N4151
1N4152
1N4153
1N4454
1N914
|
PDF
|
1N4009
Abstract: BKC666 1N4938 1N625 1N914 1N914A BAW75 BAW76 BKC600 BKC900
Text: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446
|
OCR Scan
|
00G0301
DO-35
BAW75
BAW76
BKC600
BKC666
BKC900
BKC999
1N625
1N914
1N4009
1N4938
1N914A
|
PDF
|
DO-35 PACKAGE
Abstract: DSAIH000251
Text: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446
|
OCR Scan
|
DO-35
at254
BAW75
BAW76
BKC600
BKC666
BKC900
BKC999
1N625
1N914
DO-35 PACKAGE
DSAIH000251
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N4150 1N4151 1N4153 b b S B ' m D02b^03 202 H A P X N AUER PHILIPS/DISCRETE b^E D _X' V ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. The IN4150 is primarily intended for general purpose use in computer and industrial applications.
|
OCR Scan
|
1N4150
1N4151
1N4153
DO-35
IN4150
IN4151
IN4153
N4150
IN4151
IN4153
|
PDF
|
in4151
Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
Text: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.
|
OCR Scan
|
bb53131
1N4150
1N4151
1N4153
DO-35
IN4150
IN4151
IN4153
N4150
IN4153 diode
1N4150
1N4151
1N4153
IEC134
|
PDF
|
in4151
Abstract: IN4150 IN4153 diode IN4153 N4150 1N4151 1N4153 1N4150 IEC134 colourcoded diodes
Text: • bbSB'm 1N4150 1N4151 1N4153 OOEb'îOB 202 H A P X N APIER P HILI PS/D ISCR ETE b^E » ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.
|
OCR Scan
|
1N4150
1N4151
1N4153
DO-35
IN4150
IN4151
IN4153
N4150
IN4153
IN4153 diode
1N4151
1N4153
1N4150
IEC134
colourcoded diodes
|
PDF
|
1N4153 silicon diodes
Abstract: 1N4151 1N4152 1N4153 1N4154 D0-35
Text: 1N4151 THRU 1N4l 5A Central Semiconductor Corp. Central Semiconductor Corp. SILICON SWITCHING DIODE JEDEC DO-35 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N4151 Series types are Hermetically Sealed Silicon Diodes
|
OCR Scan
|
D0-35
1N4151
1N4152
1N4153
1N4154
1N4153 silicon diodes
|
PDF
|
JANTX 1N916
Abstract: diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148 1N4151
Text: SILICON SIGNAL DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25 20
|
OCR Scan
|
100/1A
1N914
1N914A
1N914B
1N916
1N916A
1N916B
1N4148*
1N4149
1N4151
JANTX 1N916
diode 1n4446
DA-Series
1n4148 D035
1N4532
1N916 JANTX
general electric 1n4727
1N4148.1N4448
1N4148
|
PDF
|
|
|
1N4151f
Abstract: 1N4152 ditty 1N4151 1N4153 1N4154 J103 1N4151-1N4152-1N4153-1N4154
Text: 1775470 C O D I SEMICONDUCTOR IN C -L U ,-— TO 90D 0 0 5 7 9 D y_ — // DE | l 7 7 S 4 7 D □ □□□57ci 5 äliiä CODI Semiconductor, Inc. 1N 4151-1N 4152-1N 4153-1N 4154 HIGH SPEED DIODES • SILICON PLANAR EPITAXIAL D O -35 OUTLINE • C .4 p F MAX
|
OCR Scan
|
l77S47D
1N4151-1N4152-1N4153-1N4154
1-800-232-CQDI
7033il
1N4151f
1N4152
ditty
1N4151
1N4153
1N4154
J103
1N4151-1N4152-1N4153-1N4154
|
PDF
|
in4151
Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Text: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V ) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00
|
OCR Scan
|
100/1A
1N914
1N914A
1N914B
1N916
1N916A
1N916B
1N4148*
1N4149
1N4151
in4151
1N4532
1N4148
1N4152
|
PDF
|
1N4151 equivalent
Abstract: Diode Equivalent 1n4151 1N4532 1N4152 1N4151 1N4153 1N4154 1N4454 MHD618 in4454
Text: 1N4154 S E E PAG E 205 Silicon r -— i Diodes 1N4151.2.3 1N4454 1N4532,3,4 This fam ily of General Electric silicon signal diodes are very high speed sw itching diodes for computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar struc
|
OCR Scan
|
1N4154
1N4151
1N4454
1N4532
JS-2-65-11
1N4151,
1N4532,
1N4151 equivalent
Diode Equivalent 1n4151
1N4152
1N4153
1N4454
MHD618
in4454
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon Diodes DO-35 Case p Switching Diodes TYPE NO. Vrrm VF @ If trr Ct V •o (mA) (V) (mA) (ns) (pF) MAX MAX MAX 1N914 100 150 1.0 10 4.0 4.0 1N914B 100 150 1.0 100 4.0 4.0 1N3062 75 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75 1.0 10
|
OCR Scan
|
DO-35
1N914
1N914B
1N3062
1N3063
1N3064
1N3065
1N3600
1N3604
1N3605
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon Diodes DO-35 Case €3 Switching Diodes TYPE NO. V r rm lo VF @ If trr CT V (mA) (V) (mA) (ns) (PF) MAX MAX MAX 1N914 100 150 1.0 10 1N914B 100 150 1.0 1N3062 75 75 1.0 MAX 4.0 4.0 100 4.0 4.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75
|
OCR Scan
|
DO-35
1N914
1N914B
1N3062
1N3063
1N3064
1N3065
1N3600
1N3604
1N3605
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon Diodes €3 DO-35 Case Switching Diodes TYPE NO. Vrrm •o VF @ If mA (V) (mA) (V) MAX MAX MAX trr (ns) CT (pF) MAX 1N914 100 150 1.0 10 4.0 4.0 1N914B 100 150 1.0 100 4.0 4.0 1N3062 75 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75
|
OCR Scan
|
DO-35
1N914
1N914B
1N3062
1N3063
1N3064
1N3065
1N3600
1N3604
1N3605
|
PDF
|
iskra diode
Abstract: BA513 BA531 Iskra by dioda DIODE ISKRA BA519 Iskra BA-518 1N4153 silicon diodes BA517
Text: IS K R A E L E C T R O N IC S IN C 2SE D • 4 fifiB 4 7 7 Silicijeve planarne signalne diode Silicon planar signal diodes Uf prl/at If I fav *'. Übb : ■ ^trr > ' pri/at pri/at pri/at 1 MHz ¿tOÓ/iA: 25 °C Ùufib —25 °C 25°C Ur Ur=OV Tip/Type mA
|
OCR Scan
|
BA511
1N4148
BA513
1N4448
BA517
1N4150
BA518
1N4151
BA519
1N4152
iskra diode
BA531
Iskra by dioda
DIODE ISKRA
Iskra
BA-518
1N4153 silicon diodes
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. Vf V lo (mA) (V) (mA) MAX MAX MAX 1.0 10 4.0 4.0 1.0 100 4.0 4.0 Vrrm IF trr Ct (ns) (PF> MAX 1N914 100 150 1N914B 1G0 150 1N3062 7'5 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75 1.0 10
|
OCR Scan
|
DO-35
1N914
1N914B
1N3062
1N3063
1N3064
1N3065
1N3600
1N3604
1N3605
|
PDF
|
BA513
Abstract: iskra diode BA523 BA521 BA519 DIODE BA531 BA521 diode BA531 iskra BA533
Text: ISKRA ELECTRONICS INC SSE D • 4063477 Silicijeve planarne signalne diode Silicon planar signal diodes *'. lien Tip/Type BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546 BA 547 :io o m 1N4148 1N4448 1N4150
|
OCR Scan
|
BA511
1N4148
BA513
1N4448
BAS17
1N4150
701/iA
BA518
1N4151
BA519
iskra diode
BA523
BA521
DIODE BA531
BA521 diode
BA531
iskra
BA533
|
PDF
|
1N3605
Abstract: 1N3065 1N3062 1N3063 1N3064 1N3600 1N3604 1N4148 1N914 1N914B
Text: Silicon Diodes DO-35 Case • «3 Switching Diodes TYPE NO. Vr r m •o VF @ If trr Ct V (mA) (V) (mA) (ns) (PF) MAX MAX MAX 1N914 100 150 1.0 10 4.0 4.0 1N914B 100 150 1.0 100 4.0 4.0 1N3062 75 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 MAX 1N3064 75
|
OCR Scan
|
DO-35
1N914
1N914B
1N3062
1N3063
1N3064
1N3065
1N3600
1N3604
1N3605
1N4148
|
PDF
|
