3 phase ac sinewave phase inverter single ic
Abstract: U5J diode
Text: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One
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MG50Q2YS40
2-94D1A
3 phase ac sinewave phase inverter single ic
U5J diode
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2sc3310
Abstract: No abstract text available
Text: 2SC3310 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm SW ITCH IN G REGULATOR A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. HIGH SPEED D C-DC CONVERTER APPLICATIONS. • • Excellent Switching Times : tr =1.0//s (Max.), tf=1.0/us (Max.) at Iç = 4A
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2SC3310
2sc3310
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Untitled
Abstract: No abstract text available
Text: G T 1 5 J 1 0 2 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 1 0 ± 0 -3 . ¿ 3 .2 ± 0 .2 2 .7 ± 0 .2 . High Input Impedance . High Speed : t£=0.35iJs Max. . Lou Saturation Voltage : VcE(sat)"*.OV(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta«250C)
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35iJs
Tc-25
Ta-25
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MP4007
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR 4 IN 1 MP4007 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2 ± 0.2 LOAD SWITCHING. . Small Package by Full Molding. (SIP 10 Pin) . High Collector Power Dissipation.
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MP4007
Ta-25
MP4007
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YTF822
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSn YTF822 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. 03.6±O.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance
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YTF822
20kXi)
YTF822
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Untitled
Abstract: No abstract text available
Text: 54AC11002, 74AC11002 QUADRUPLE 2-INPUT POSITIVE-NOR GATES D2957, JUNE 1987 - REVISED APRIL 1993 54AC11002 . . . J PACKAGE 74AC11002 . . . D OR N PACKAGE TOP VIEW Flow-Through Architecture Optimizes PCB Layout Center-Pin Vcc and GND Configuration Minimizes High-Speed Switching Noise
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54AC11002,
74AC11002
D2957,
500-mA
300-mil
54AC11002
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2SK578
Abstract: 2SK57
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK578 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR APPLICATIONS. #3,3±Q.2 FEATURES: . Low Drain-Source ON Resistance
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2SK578
0-22n
0-a25
2SK578
2SK57
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MG400 TOSHIBA
Abstract: No abstract text available
Text: TOSHIBA MG400Q1US51 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG400 1 US51 HIGH P O W ER SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • H igh Input Impedance H ighS peed : tf= 0.3/;s Max. Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG400Q1US51
MG400
MG400 TOSHIBA
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diode SS 3
Abstract: No abstract text available
Text: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
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2SK2699
diode SS 3
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diode E155
Abstract: mig20j
Text: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.
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MIG20J906E/EA
MIG20J906E,
MIG20J906EA
MIG20J906E
2-108E5A
2-108E6A
o--------Bo40-
80Ilo
961001EAA1
diode E155
mig20j
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TRANSISTOR Marking XB PNP
Abstract: YTS3906
Text: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity
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YTS3906
-50mA,
YTS3904
300ne
TRANSISTOR Marking XB PNP
YTS3906
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YTFP450
Abstract: SC651
Text: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :
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YTFP450
VDS-10V,
00A/ps
YTFP450
SC651
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)
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2SD2079
2SB1381.
MAX30
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tc258c
Abstract: No abstract text available
Text: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA VI < D ISC RETE/O PTO TOSHIBA SEMICONDUCTOR T o s h ib a DE I TEHTEiSD GGlbflia 99D 16812 D T -B 9 -1 3 FIELD EFFECT TRANSISTOR Y T F *4 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA TT-MOS I ) HIGH SPEED, HI G H C U RRENT SWITCHING APPLICATIONS.
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250liA
250uA
00A/ys
tc258c
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mig10J
Abstract: No abstract text available
Text: TOSHIBA MIG10J855H TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10 J855H Units in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage :
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MIG10J855H
MIG10
J855H
0A/600V
0A/800V
mig10J
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2sc3892a
Abstract: 2Sc3892a equivalent 2SC3892 c 1173
Text: 2SC3892A SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. Unit in mm . High Voltage : VcBO ^1500V I 5 . 5 i 0.5 . 0 3 .6± 0.3 3.0 ± 0 .3 . High Speed Switching Resistive Load tf=0.2ys(Typ.) . Collector Metal is Fully Covered with Mold Resin.
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2SC3892A
1173-Y
2sc3892a
2Sc3892a equivalent
2SC3892
c 1173
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)
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2SC3265
2SA1298
O-236MOD
SC-59CEO
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG75J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 75A)
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MG75J1BS11
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL JUNCTION TYPE HIGH EFFICIENCY RECTIFIER HED 1DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS. Repetitive Peak Reverse Voltage Vr r m =200V Average Forward Current IF ( A V ) = 1 . 0 A (Ta=64°C) V a r y Fast Reverse-Recovery Time 35ns (Max.)
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1DL41A
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1117F
Abstract: No abstract text available
Text: T O S H IB A RN1112F,RN1113F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 1117F 'm m m m m g R N 1 1 1 3 F■ m m m 'm m m m m tr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors
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RN1112F
RN1113F
1117F
RN2112F,
RN2113F
1117F
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MG50G2CL3
Abstract: Mg50G2cl mg50g2
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)
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MG50G2CL3
MG50G2CL3
Mg50G2cl
mg50g2
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Untitled
Abstract: No abstract text available
Text: RN6006 RN6006 MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in m m 1,6M A X . 1.7M AX. m - W ith B u ilt-in B ias R esistors S im p lify C irc u it D esign R educe a Q u a n tity of P a r ts a n d M a n u fa c tu rin g Process
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RN6006
RN6006)
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c7805
Abstract: C7812 IR Sensor TK 1836 c7815 7812A UC7915 voltage regulator 7812A features 7812A voltage regulator UC494 UC3704
Text: y lN T E O R A T E D C IR C U ITS UNITRODE Power Supply Controls PWM Performance Chart SWITCHING REGULATOR CONTROL ICs N o te : M o s t s e rie s a v a ila b le s c re e n e d to /8 8 3 B Rev. C. / VOLTAGE MODE PWM’s TYPE PERFORMANCE CHARACTERISTICS / /////tf/
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UC1524/2524/3524
UC1524A/2524A/3524A
UC1525A/2525A/3525A
UC1527A/2527A/3527A
UC1526/2526/3526
UC1526A/2526A/3526A
UC1823/2823/3823
UC1825/2825/3825
UC494
UC494A/UC494AC
c7805
C7812
IR Sensor TK 1836
c7815
7812A
UC7915
voltage regulator 7812A features
7812A voltage regulator
UC3704
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1N4447
Abstract: No abstract text available
Text: TYPES 1N4148. 1N4149, IN U M i : ^ 4 i9 SILICON SWITCHING DIODES B U L L E T IN NO. D L-S 739269, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents: 1N4148 . . . 1N914 . .
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1N4148.
1N4149,
1N4148
1N914
1N4531
1N4447
1N916A
1N4149
1N916
1N4448
1N4447
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