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    1N3840 Price and Stock

    CTS Corporation 581N38402IAT

    5.0mm x 3.2mm Surface Mount Stra
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    DigiKey 581N38402IAT Reel 1,000
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    CTS Corporation 581N38402ITT

    5.0mm x 3.2mm Surface Mount Stra
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    DigiKey 581N38402ITT Reel 1,000
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    CTS Corporation 581N38405CAT

    5.0mm x 3.2mm Surface Mount Stra
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    DigiKey 581N38405CAT Reel 1,000
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    CTS Corporation 581N38405DTT

    5.0mm x 3.2mm Surface Mount Stra
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    DigiKey 581N38405DTT Reel 1,000
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    CTS Corporation 581N38402CAT

    5.0mm x 3.2mm Surface Mount Stra
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    DigiKey 581N38402CAT Reel 1,000
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    1N3840 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N3840 APD Semiconductor DO7, DO-35 Four Layer Diodes Scan PDF
    1N3840 APD Semiconductor Four Layer Diodes / Rectifiers Scan PDF
    1N3840 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3840 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3840 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3840 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3840 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N3840 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF

    1N3840 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N3840 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m


    Original     		PDF 1N3840 Current50m StyleDO-204AA NumberTY00200003

    1N5411

    Abstract: 1N5760 DIODE GE 103717 1N5758 1N5761 germanium motorola 2n491 1N5759 Hitron
    Text: PART NUMBER INDEX Part Number Manufacturer 1N3299 AmerMicroSC Mcrwv Diode 1N3300 AmerMicroSC Mcrwv Diode 1N3300A AmerMicroSC 1N3301 Mcrwv Diode 1N3301 A 1N3302 Mcrwv Diode 1N3302A 1N3303 CrimsonSemi 1N3303A Mcrwv Diode 1N3304 AmerMicroSC Mcrwv Diode 1N3304A


    Original     		PDF 1N3299 1N3300 1N3300A 1N3301 1N3302 1N3302A 1N3303 1N3303A 1N3304 1N5411 1N5760 DIODE GE 103717 1N5758 1N5761 germanium motorola 2n491 1N5759 Hitron

    shockley diode

    Abstract: shockley diode shockley Thyristor Shockley diode GG 26 4E204 diac bidirectional diode 4E50M28 1N3772 1N3835
    Text: TRIGGERS & SWITCHES Item Number Part Number Manufacturer Switching Voltage Min V Max Pulse ITRM @ Width (s) (A) Is Max VT Max (A) (A) @ IT IH Max (A) (A) Operating Temperature (Oe) Min Max Package Style Diac, (Bidirectional Diode Thyristor) (Cont'd) 060


    Original     		PDF 1N3771 1N3300A 1N3300 4E20M28 4E20M8 shockley diode shockley diode shockley Thyristor Shockley diode GG 26 4E204 diac bidirectional diode 4E50M28 1N3772 1N3835

    4E20-8

    Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 4E20-8 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490

    fri07

    Abstract: 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes 25°C @ Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 fri07 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A

    1N3842

    Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
    Text: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF 125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 1N3842 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303

    shockley diode application

    Abstract: shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite
    Text: CATALOG OF SHOCKLEY 4-LAYER DIODES L L E V IT E SHOCKLEY 10O1 RAGE M IL L TRANSISTOR ROAD • PA LO A L T O . C A L IF . General Information and Introduction to the Shockley 4 -L a y e r Diode The Shockley 4-layer diode is a two terminal, silicon semiconductor switch. It has


    OCR Scan     		PDF 8000/nominal shockley diode application shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite

    4E50M-28

    Abstract: FR103 1N3772
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25 C 125pA Is Switching current Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF 125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 4E50M-28 FR103 1N3772

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    3S41SL

    Abstract: shockley 4E20-28 4E20-3 4E20-8 4E20-M-28 4E20-M-3 4E20-M-8 4E30-3 4E30-8
    Text: -FENldAL ELECTRONICS/APD * S3 DE | 3541SL.3 OODDTEE 3 | T r i FOUR-LAYER DIODES DO-7/DO-35 Case Typo Switching Voltage Vs ± V @ 25*C ' V ' ’ ' . . 4E20-3 4E20-M-3 4E20-8 - 4 E 2 0 -M -8 4 E 2 0 -2 8 20±4 20±4 20±4 20±4 20 ± 4 4E20-M-28


    OCR Scan     		PDF 3S41SL DO-7/DO-35 4E20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 4E20-M-28 4E30-3 4E30-M-3 shockley 4E30-8