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    4E20M8 Search Results

    4E20M8 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    4E20-M-8 APD Semiconductor DO7, DO-35 Four Layer Diodes Scan PDF
    4E20-M-8 APD Semiconductor Four Layer Diodes / Rectifiers Scan PDF
    4E20M8 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    4E20M8 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF

    4E20M8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4E20-28

    Abstract: 4E20-8 4E20-M-3 4E30-M-3 4E50M-28 4E50 1N4007V AUO-002 4E303 4E20
    Text: AMERICAN POIilER 073713S 5«iE D DEVICES 0DDDD7D DM7 • A P D / ^ c V - / J » 1N4001-1N4007 p o w e r d e v i c e s , inc. SEMICONDUCTORS 1A plastic silicon rectifiers MECHANICAL CHARACTERISTICS - .010 : 002 NOM DIA I'61 1.1 FEATURES • Low cost • High current capability


    Original     		PDF 073713S 1N4001-1N4007 DO-41 1N4001 1N4002 1N4O03 1N4004 1N4005 1N4006 1N4007 4E20-28 4E20-8 4E20-M-3 4E30-M-3 4E50M-28 4E50 1N4007V AUO-002 4E303 4E20

    shockley diode

    Abstract: shockley diode shockley Thyristor Shockley diode GG 26 4E204 diac bidirectional diode 4E50M28 1N3772 1N3835
    Text: TRIGGERS & SWITCHES Item Number Part Number Manufacturer Switching Voltage Min V Max Pulse ITRM @ Width (s) (A) Is Max VT Max (A) (A) @ IT IH Max (A) (A) Operating Temperature (Oe) Min Max Package Style Diac, (Bidirectional Diode Thyristor) (Cont'd) 060


    Original     		PDF 1N3771 1N3300A 1N3300 4E20M28 4E20M8 shockley diode shockley diode shockley Thyristor Shockley diode GG 26 4E204 diac bidirectional diode 4E50M28 1N3772 1N3835

    4E20-8

    Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 4E20-8 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490

    fri07

    Abstract: 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes 25°C @ Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 fri07 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A

    1N3842

    Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
    Text: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF 125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 1N3842 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303

    shockley diode application

    Abstract: shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite
    Text: CATALOG OF SHOCKLEY 4-LAYER DIODES L L E V IT E SHOCKLEY 10O1 RAGE M IL L TRANSISTOR ROAD • PA LO A L T O . C A L IF . General Information and Introduction to the Shockley 4 -L a y e r Diode The Shockley 4-layer diode is a two terminal, silicon semiconductor switch. It has


    OCR Scan     		PDF 8000/nominal shockley diode application shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite

    4E50M-28

    Abstract: FR103 1N3772
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25 C 125pA Is Switching current Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF 125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 4E50M-28 FR103 1N3772

    shockley

    Abstract: 4E20-8 4E30-8 1N3844 1n3842 4E20-28 4E20-3 4E20-M-28 4E20-M-3 4E20-M-8
    Text: F E NUI AL EL EC T RO NI CS /APD Û3 DE I 3541SL.3 DODDÌEE 3 T DO-7/DO-35 Case Switching Voltage Typo ' 4E20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 - — 14-25 — 14-25 — 4E20-M-28 4E30-3 4E30-M-3 4E30-8 4E30-M-8 20 ± 4 30±4 30 ± 4 30 ± 4


    OCR Scan     		PDF 3541SL DO-7/DO-35 4E20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 4E20-M-28 4E30-3 4E30-M-3 shockley 4E30-8 1N3844 1n3842

    4E20-28

    Abstract: 1N3935 FIRING squib AMERICAN POWER DEVICES 4E50M-28 4E20M8 4E20-8 4E20
    Text: 53E D AMERICAN POWER DEVICES • D73713S Q000Q25 4 .■ 5 FOUR-LAYER DIODES “ — - — - - i I DO-7/DO-35 Case Type Switching Voltage Vs ± V @ 25°C v 4t?20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 20±4 20±4 20±4 20 ± 4 20±4 4E20-M-28


    OCR Scan     		PDF D73713S Q000Q25 DO-7/DO-35 4E20-M-3 4E20-8 4E20-M-8 4E20-28 4E20-M-28 4E30-3 4E30-M-3 1N3935 FIRING squib AMERICAN POWER DEVICES 4E50M-28 4E20M8 4E20

    shockley

    Abstract: 4E20-28 395 transistor clevite 4E20-8 4e20m-8 4G200M 4E20A 4J50-25 4E30-8
    Text: TRANSISTOR PA L O 1801 ALTO PAGE PLANT MILL ROAD • PALO ALTO. CALIFORNIA A D iv is io n o f C /e vite C o rp o ra tio n 4-LAYER MIL-LINE 1-99 100-499 4E20M-8 5.00 4.00 4E20M-28 4.80 4E30M-8 500-1999 E DIODES S E R I E S IN 1-99 100-499 500-1999 3.30 IN 3831


    OCR Scan     		PDF 4E20M-8 4E20M-28 4E30M-8 4E30M-28 4E40M-8 4E40M-28 4E50M-8 4E50M-28 4E100M-8 4E100M-28 shockley 4E20-28 395 transistor clevite 4E20-8 4G200M 4E20A 4J50-25 4E30-8