1n23we
Abstract: No abstract text available
Text: 1N23WE 35 40 and 60 Amp Power Silicon Rectifier Diodes 49.87 Diodes UHF/Microwa. Page 1 of 1 Enter Your Part # Home Part Number: 1N23WE Online Store 1N23WE Diodes 35 40 and 60 Amp Power Silicon Rectifier D iodes Transistors Integrated Circuits Enter code INTER3 at
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1N23WE
1N23WE
com/1n23we
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1N23we diode
Abstract: 1N23WE
Text: 1N23WE SILICON MIXER DIODE PACKAGE STYLE DO- 23 DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS
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1N23WE
1N23WE
1N23we diode
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1N23we diode
Abstract: 1n23
Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s
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1N23WE
1N23W
DO-23
1N23we diode
1n23
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D65019
Abstract: 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR ASME-14 1N23WG
Text: REVISIONS LTR A DESCRIPTION DATE APPROVED Add new source, correct figure 1 notes. Editorial changes throughout. 2 June 2006 Thomas M. Hess MIL-S-19500/322 has been inactivated. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100
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MIL-S-19500/322
ASME-14
037Z3
D65019
1N23 diode
JAN1N23WE
1N23WGMR
1N23 Diode Holder
037Z3 01037
JAN1N23WG
JAN1N23WGMR
1N23WG
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1N23 diode
Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
Text: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed
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CS100
CS101
1N23 diode
1N23C
1N23B
1N21C
1N23A
case cs101
1N415C diode
1N23WG
1N415H
CS100
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1N21B
Abstract: 1n23 cv102
Text: ueti, Line, ^s-mi-donductoi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Microwave Diodes b Notn L C — Conversion Lots MR -NoiK Ratio P R F - M*x. RF Paww V B - Breakdown Voltage - Overall NoiM Fictor
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500/1000mA
1N21C
1N23A
1N21B
1N21B
1n23
cv102
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CS100
Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C
Text: Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed
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CS100
CS101
CS100
cs-100
1N415C
1N23 diode
1N23B
1N23
1N21E
1N416C
cs-101
1N21C
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1N23C
Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:
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IN23C
Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
Text: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low
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DO-22,
DO-23
DO-37
26GHz.
supp26A
DO-37
1N26B
1N26C
IN23C
IN23E
in23we
IN416D
1N26
1N25 diode
1N26A diode
IN23WGMR
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1N23C diode
Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure
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DO-22,
DO-23
DO-37
ardN21H
1N21HR
1N150
1N160
1N150R
1N160R
1N23C
1N23C diode
DIODE ku 1490
1N25 diode
1N26A diode
1N415C
1N4294
1N4603R
1N26BR
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1n415c
Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C
Text: Point Con tact Diodes: 1 N Series S - X Band Point Contact Mixer Diodes Description This MicroM etrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed
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CS100
1N23F
1N23G
1N23WG
1N23H
CS101
1N415C
1n415c
1N23G
1N21C
1N21D
1N21E
1N21F
1N21G
1N21WE
1N416G
1N416C
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1N23 diode
Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local
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1N23 diode
Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure
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1N21B
Abstract: 1n23b 1N21B diode 1N23 1N25 diode CS34B 1N23CR 1N25 1N23A CS36A
Text: 46 Electronic Valves Z& I Aero Services Ltd London England 1972-73 'Tm ìiX G E R M A N IU M J U N C T IO N S T U D M O U N T E D H A L F W A V E R E C T IF IE R S GJ3M, 200 p.i.v. GJ5M, 300 p.i.v. GJ6M, 150 p.i.v. GJ7M, 80 p.i.v. Note 400/800 m A D C . 400/800 m A DC
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SZT19
1N23C
CV111
1N23CR*
CV112
1N23E
CV291
1N23WEE
CV2226
CV2258
1N21B
1n23b
1N21B diode
1N23
1N25 diode
CS34B
1N23CR
1N25
1N23A
CS36A
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1N23 diode
Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for
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1N3205
1N25XX,
1N78X,
DMA649X-XXX
1N23 diode
1N53AR
1N26A diode
Silicon Point Contact Mixer Diodes
1N415
1N832A
N178
kaba
1N23WG
1N26BR
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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