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    1N23WE Search Results

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    1N23WE Price and Stock

    OSRAM SYLVANIA 1N23WE

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 1N23WE 28 1
    • 1 $180
    • 10 $166.14
    • 100 $147.6
    • 1000 $147.6
    • 10000 $147.6
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    Quest Components 1N23WE 21
    • 1 $225
    • 10 $225
    • 100 $180
    • 1000 $180
    • 10000 $180
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    Microwave Associates Inc JCBYI-1N23WE

    1N23WE (Also Known As: 1N23WE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components JCBYI-1N23WE 9
    • 1 $97.5
    • 10 $93.75
    • 100 $93.75
    • 1000 $93.75
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    Microwave Associates Inc 1N23WEJAN

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1N23WEJAN 6
    • 1 $254.0566
    • 10 $246.7978
    • 100 $246.7978
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    • 10000 $246.7978
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    OSRAM SYLVANIA JHS-1N23WE

    1N23WE-JHS (Also Known As: 1N23WE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components JHS-1N23WE 5
    • 1 $97.5
    • 10 $93.75
    • 100 $93.75
    • 1000 $93.75
    • 10000 $93.75
    		Buy Now

    Microwave Associates Inc JBYI-1N23WE

    1N23WE (Also Known As: 1N23WE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components JBYI-1N23WE 1
    • 1 $97.5
    • 10 $97.5
    • 100 $97.5
    • 1000 $97.5
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    1N23WE Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N23WE Advanced Semiconductor SILICON MIXER DIODE Original PDF
    1N23WE MicroMetrics S - x Band Point Contact Mixer Diode Original PDF
    1N23WE MicroMetrics S - X Band Point Contact Mixer Diodes Original PDF
    1N23WE Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N23WE Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1N23WE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N23WE Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N23WE ZaeriX Short Form Data Catalogue 1972-73 Short Form PDF
    1N23WEM MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF
    1N23WEM Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N23WEM Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1N23WEM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N23WEMR MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF
    1N23WEMR Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N23WEMR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N23WER MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF
    1N23WER Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    1N23WE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N23we diode

    Abstract: 1N23WE
    Text: 1N23WE SILICON MIXER DIODE PACKAGE STYLE DO- 23 DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS


    Original     		PDF 1N23WE 1N23WE 1N23we diode

    1n23we

    Abstract: No abstract text available
    Text: 1N23WE 35 40 and 60 Amp Power Silicon Rectifier Diodes 49.87 Diodes UHF/Microwa. Page 1 of 1 Enter Your Part # Home Part Number: 1N23WE Online Store 1N23WE Diodes 35 40 and 60 Amp Power Silicon Rectifier D iodes Transistors Integrated Circuits Enter code INTER3 at


    Original     		PDF 1N23WE 1N23WE com/1n23we

    Untitled

    Abstract: No abstract text available
    Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s


    Original     		PDF 1N23WEM 1N23W

    D65019

    Abstract: 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR ASME-14 1N23WG
    Text: REVISIONS LTR A DESCRIPTION DATE APPROVED Add new source, correct figure 1 notes. Editorial changes throughout. 2 June 2006 Thomas M. Hess MIL-S-19500/322 has been inactivated. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100


    Original     		PDF MIL-S-19500/322 ASME-14 037Z3 D65019 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR 1N23WG

    1N23 diode

    Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
    Text: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed


    Original     		PDF CS100 CS101 1N23 diode 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100

    1N23we diode

    Abstract: 1n23
    Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s


    Original     		PDF 1N23WE 1N23W DO-23 1N23we diode 1n23

    1N21B

    Abstract: 1n23 cv102
    Text: ueti, Line, ^s-mi-donductoi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Microwave Diodes b Notn L C — Conversion Lots MR -NoiK Ratio P R F - M*x. RF Paww V B - Breakdown Voltage - Overall NoiM Fictor


    Original     		PDF 500/1000mA 1N21C 1N23A 1N21B 1N21B 1n23 cv102

    CS100

    Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C
    Text: Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed


    Original     		PDF CS100 CS101 CS100 cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C

    FGFA

    Abstract: 1N23E sft 43 1N23CR 9375MHz 1N23CMR 1N23D 1N23DM 1N23DR 1N23EM
    Text: - 166 - MI J& % a s * 1N23CMR Bn * * * * B£ B£ 0 'S Q1 1N23CR 1N23D 1N23DM 1N23DMR * 1N23DR Bn * 1N23EM B l am * 1N23E * 1N23BMR * 1N23ER * 1N23F * 1N23FM * 1N23FMR * 1N23P8 * 1N23G * 1N23GM * 1N23GMR * 1N23GR * 1N23WD * 1N23WDM * 1N23WE * 1N23WBM * 1N23WF


    OCR Scan     		PDF 1N23CMR 1N23CR 1N23D 1N23DM 1M230MR lN23CÃ ffi14 9375MHz, 1N23DR 1N23E FGFA sft 43 9375MHz 1N23EM

    1N21B

    Abstract: 1n23b 1N21B diode 1N23 1N25 diode CS34B 1N23CR 1N25 1N23A CS36A
    Text: 46 Electronic Valves Z& I Aero Services Ltd London England 1972-73 'Tm ìiX G E R M A N IU M J U N C T IO N S T U D M O U N T E D H A L F W A V E R E C T IF IE R S GJ3M, 200 p.i.v. GJ5M, 300 p.i.v. GJ6M, 150 p.i.v. GJ7M, 80 p.i.v. Note 400/800 m A D C . 400/800 m A DC


    OCR Scan     		PDF SZT19 1N23C CV111 1N23CR* CV112 1N23E CV291 1N23WEE CV2226 CV2258 1N21B 1n23b 1N21B diode 1N23 1N25 diode CS34B 1N23CR 1N25 1N23A CS36A

    1n415c

    Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C
    Text: Point Con tact Diodes: 1 N Series S - X Band Point Contact Mixer Diodes Description This MicroM etrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed


    OCR Scan     		PDF CS100 1N23F 1N23G 1N23WG 1N23H CS101 1N415C 1n415c 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


    OCR Scan     		PDF

    IN23C

    Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
    Text: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low


    OCR Scan     		PDF DO-22, DO-23 DO-37 26GHz. supp26A DO-37 1N26B 1N26C IN23C IN23E in23we IN416D 1N26 1N25 diode 1N26A diode IN23WGMR

    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for


    OCR Scan     		PDF 1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR

    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:


    OCR Scan     		PDF

    1N23C diode

    Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
    Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure


    OCR Scan     		PDF DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR

    in23c

    Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
    Text: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make


    OCR Scan     		PDF DO-22, DO-23 DO-37 26GHz. 1N26B DO-37 1N26C 30MHz, 1000Hz in23c IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


    OCR Scan     		PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17