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    Microchip Technology Inc 1N1344A

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    Microchip Technology Inc 1N1344AR

    DIODE GEN PURP 200V 16A DO4
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    New Jersey Semiconductor Products, Inc. 1N1344A

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    1N1344A Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N1344A Sussex Semiconductor Power Rectifier Devices Original PDF
    1N1344A ABB Group Power Semiconductor Data Book 1976 Scan PDF
    1N1344A Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan PDF
    1N1344A General Diode Stud Mounted Silicon Power Rectifiers Scan PDF
    1N1344A General Electric Semiconductor Data Book 1971 Scan PDF
    1N1344A General Electric Semiconductor Data Handbook 1977 Scan PDF
    1N1344A Microsemi Scan PDF
    1N1344A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N1344A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N1344A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N1344A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N1344A Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N1344A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N1344A Powerex Rectifiers 3 to 6 Amps, Shortform Data Scan PDF
    1N1344A Semico Silicon Power Rectifiers, 6 Amp, DO-4 Scan PDF
    1N1344A Semicon Components Standard Recovery Rectifiers, Stud Base DO-4 Scan PDF
    1N1344A Semitronics Silicon Rectifier Selection Guide (Low Quality Datasheet) Scan PDF
    1N1344A Syntron Silicon Rectifier Data Book 1971 Scan PDF

    1N1344A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N1344A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)150Ï V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage.64í @I(FM) (A) (Test Condition)6.0 @Temp. (øC) (Test Condition)150Ï


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    1N1344A Voltage200 PDF

    jan1n12

    Abstract: 1n1118r 1N1120R JANTX1N1202A 1N1124 N1206 1N1120
    Text: rectifiers 24 JEDEC 10 Part Number A 1N607, R 1N607A, RA 1N608, R 1N608A, RA 1N609, RA 1N609A, RA 1N612, R 1N612A, RA 1N613, R 1N613A, RA 1N614, R 1N614A, RA 1N115, R 1N1118, R 1N1119, R 1N1120, R 1N1124, R 1N1124A, RA JAN1N1124A/104 1N1125, R 1N1125A, RA


    Original
    1N607, 1N607A, 1N608, 1N608A, 1N609, 1N609A, 1N612, 1N612A, 1N613, 1N613A, jan1n12 1n1118r 1N1120R JANTX1N1202A 1N1124 N1206 1N1120 PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


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    Untitled

    Abstract: No abstract text available
    Text: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in power supply and other rectification applications.


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    1N253 1N254 1N255 1N256 1N332 1N333 1N334 1N335 1N336 1N337 PDF

    1N1342

    Abstract: 1N1199 1N1202 1N1124 1N1201 1N1581 1N13468 1N1348 1N1200A 1N1200
    Text: 8 3D 00 172] 8136650 S E M I C O N D U C T OR S INC A3 Silicon Power Rectifiers D E | fll3btiSD Ú/- J 7 QD0D17E fl 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341 A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582,


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    DD0D17E 1N1341, 1N1341 1N1341B, 1N1581, 1N1612, 1N2228, 1N2491 1N1342, 1N1342A, 1N1342 1N1199 1N1202 1N1124 1N1201 1N1581 1N13468 1N1348 1N1200A 1N1200 PDF

    1N2222A

    Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
    Text: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244


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    oQoos11! DO-41case 1N3549 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N2222A 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 PDF

    JANTX1N5554

    Abstract: No abstract text available
    Text: Standard Recovery Rectifiers Part Number Microsemi Division Package Outline Santa Ana Santa Ana Colorado Santa Ana Santa Ana Colorado Santa Ana Santa Ana PPC, Inc. Colorado Colorado Colorado Colorado Colorado Colorado Colorado Scottsdale Chatsworth Chatsworth


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    REC-11 JANTX1N5554 PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor PDF

    1N3610

    Abstract: 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227
    Text: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in


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    1N253 1N254 1N255 1N256 1N332 1N333 1N334 1N335 1N336 1N337 1N3610 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227 PDF

    LT3973-3.3

    Abstract: IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731
    Text: ^ discrete devices | jemitronicr hot line TO LL FREE NUM BER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Maximum Peak Reverse Voltage volts Type Maximum Average Forward Current (Amps) @ Case Temp. (°C ) Maximum


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    1N1203 1N1203A 1N1203B 1N1204 1N1204A 1N1204B LT3973-3.3 IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731 PDF

    GE SCR Manual

    Abstract: GE SCR 1000 AMP SCR 214 scr stack General electric SCR scr 106 GE SCR 1000 SCR Phase Control IC SCR nomenclature, General electric SCR 60A 500V
    Text: SCR Medium & High Current Modules NOMENCLATURE CIO 12BA1AD1 is a 200V, fu ll wave back to back bridge connected CIO c e lls on type 12 F ins, capable o f c o n t r o llin g 4.7 amp average per SCR in free a ir o r 6.2 amp average per ce ll with 1000 lin e a r feet per minute forced a ir.


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    12BA1AD1 C10JI 1N13414-46A 1N1341A-46A 1N2154-59 1N3292-96 1N3289-92 C3512UB1AD1 C3512UB1FD1 C3512UF1AD1 GE SCR Manual GE SCR 1000 AMP SCR 214 scr stack General electric SCR scr 106 GE SCR 1000 SCR Phase Control IC SCR nomenclature, General electric SCR 60A 500V PDF

    insulated stud rectifier

    Abstract: 1N1344RA EMISSIVITY-90 INII99A-INI206A 1N1345RA 1N1341A 1N1341RA 1N1342A 1N1342RA 1N1343RA
    Text: Silicon IN1341A-48A IN1341RA-48RA Rectifiers MEDIUM CURRENT 6A TYPE These stud m ounted diffused junction silicon rectifiers, designed to m eet M IL -E -1/1108 are recommended for all rectifier applications in the 2 to 8 ampere range. A high junction tem ­


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    IN1341A-48A IN1341RA-48RA MIL-E-1/1108) ECG-469 111ill insulated stud rectifier 1N1344RA EMISSIVITY-90 INII99A-INI206A 1N1345RA 1N1341A 1N1341RA 1N1342A 1N1342RA 1N1343RA PDF

    BROWN BOVERI

    Abstract: B 170 BROWN BOVERI 1N1124 1N1344A N1346 S2010 1N1614 Diodes N1124 S2060 1N1342
    Text: BROWN BOVERI «FMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEIM Silicon Avalanche Power Rectifiers BBC Geschäftsbereich Halbleiter und Stromrichter Telefon 06206 503-1, Telex 04-65 727 Postfach 200, D-6840 Lampertheim Series 20 16 Amperes Average


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    D-6840 S2010 R2010 1N1342, 1N1342A, 1N1342B, 1N1582, 1N1613, N2492 S2020 BROWN BOVERI B 170 BROWN BOVERI 1N1124 1N1344A N1346 1N1614 Diodes N1124 S2060 1N1342 PDF

    1n15b

    Abstract: No abstract text available
    Text: discrete devices jemitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Type M axim um Peak Reverse Voltage volts Maxim um Average Forward C urrent (Amps) @ Case Tem p. (°C ) 1N1203


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    1N1203 1N1203A 1N1203B 1N1204 1N1204A 1N1204B 1N1205A 1N1205B 1N1206 1N1206A 1n15b PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF

    A28A

    Abstract: 1N1199A-1206A 1N3987 1N5331 IN1346A 1N1341A-48A A28F-D 1N1614
    Text: SILICON RECTIFIERS MEDIUM CURRENT 5 TO 12 AM PERES 1N1612-16 1N134 1A-48A JEDEC — GE T Y P E S — 1N3987-90 1N3879-83 — 1N 1199A-1206A 1M3670A-73A 1N5331 1 N4510-11 1N3889-93 A28F-D A129E-PB — E LE C T R IC A L S P E C IFIC A T IO N S I f m a v


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    IN1612-16 1N1341A-48A 1N3987-90 1N3879-83 1N1199A-1206A 1M3670A-73A 1N5331 1N3889-93 1N4510-11 A28F-D A28A 1N3987 IN1346A 1N1614 PDF

    1N1115

    Abstract: 1N255 MR1121 1N1118 1N1540 1N254 1N1116 MR1120R 1N1117 1N611
    Text: MR1 120 th ru MR1 126 SILICON MR1128 MR1130 Medium-current silicon rectifiers featurehigh surge current capacity, and low forward voltage drop. CASE 245 (DO-4) M A X IM U M R A T IN G S Rating Symbol MR MR MR MR MR MR MR MR MR 1120 1121 1122 1123 1124 1125 1126 1128 1130


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    MR1128 MR1130 Curre41A 1N349 1N551 1N611 1N553 1N1127A 1N1128 1N3671A 1N1115 1N255 MR1121 1N1118 1N1540 1N254 1N1116 MR1120R 1N1117 PDF

    TIC2260

    Abstract: t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834
    Text: G E K E R A LP U R P O S E R EC TïFISR S 0258354 A D VA N CED S E M IC O N D U C T O R 82 tEl Q25a3Sl<0000035 ° I 82D 00035 o r - o / - o f lo AV ER A G E R ECTIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200


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    MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A IN2154 TIC2260 t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834 PDF

    1N1120

    Abstract: 1N2484 1N342 1N2226
    Text: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500


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    1N3241 1N3242 1N3243 1N3244 1N3245 1H253 1N254 1N255 150J7 1N1120 1N2484 1N342 1N2226 PDF

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838 PDF