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    ARCOTEK K6R4004C1D-JC10T00

    SRAM ASYNC FAST 4M 1024 x4 10ns
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    DigiKey K6R4004C1D-JC10T00 Reel 239
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    Samsung Semiconductor K6R4004C1D-JC10T00

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    Karl Kruse GmbH & Co KG K6R4004C1D-JC10T00 16,000
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    K6R4004C1D Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6R4004C1D Samsung Electronics 1M x 4 Bit High-Speed CMOS Static RAM Original PDF
    K6R4004C1D-JC Samsung Electronics Original PDF
    K6R4004C1D-JC10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4004C1D-JC10 Samsung Electronics 1M x 4 Bit High-Speed CMOS Static RAM Original PDF
    K6R4004C1D-JC(I)10 Samsung Electronics 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4004C1D-JI10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4004C1D-KC10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4004C1D-KI10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF

    K6R4004C1D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K6R4016V1D-J

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		K6R4004C1D 115mA 100mA 32-SOJ-400 K6R4016V1D-J PDF

    44-TSOP2

    Abstract: K6R4004C1D
    Text: PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary


    Original     		K6R4004C1D 115mA 100mA 32-SOJ-400 44-TSOP2 K6R4004C1D PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D-C/D-I/D-P Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4004C1D-C/D-I/D-P 32-SOJ-400 PDF

    K6R4004C1D

    Abstract: K6R4004C1D-JC K6R4016C1D K6R4016 K6R4004
    Text: PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary


    Original     		K6R4004C1D 115mA 100mA 32-SOJ-400 K6R4004C1D K6R4004C1D-JC K6R4016C1D K6R4016 K6R4004 PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    K6R4004C1D-JC

    Abstract: K6R4004V1D K6R4016V1D-J
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4004C1D-JC K6R4004V1D K6R4016V1D-J PDF

    K6R4008V1D

    Abstract: K6R4016C1D 44-TSOP2
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4008V1D K6R4016C1D 44-TSOP2 PDF

    K6R4016V1D-J

    Abstract: K6R4008V1D
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF K6R4016V1D-J K6R4008V1D PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    K6R4016V1D

    Abstract: K6R4016V1D-U K6R4016V1D -ui10 44-TSOP2-400BF K6R4016 K6R4008V1D K6R4016V1D-T K6R4016V1D-J K6R4004 K6R4016V1D10
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016V1D 256Kx16 110mA 130mA 55/Typ. 35/Typ. K6R4016V1D K6R4016V1D-U K6R4016V1D -ui10 44-TSOP2-400BF K6R4016 K6R4008V1D K6R4016V1D-T K6R4016V1D-J K6R4004 K6R4016V1D10 PDF

    K6R4016V1D-J

    Abstract: K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF 002MIN K6R4016V1D-J K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016 PDF

    k6r4008c1d-j

    Abstract: K6R4004V1D K6R4016C1D K6R4008C1D 36-SOJ-400 36-SOJ Samsung K6R4008C1D
    Text: PRELIMINARY CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary


    Original     		K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF k6r4008c1d-j K6R4004V1D K6R4016C1D K6R4008C1D 36-SOJ-400 36-SOJ Samsung K6R4008C1D PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B PDF

    k6r4016

    Abstract: K6R4016V1D K6R4016V1D -ui10 K6R4004C1D-JC
    Text: PRELIMPreliminaryPPPPPPPPPINARY CMOS SRAM K6R4016V1D Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016V1D 256Kx16 110mA 55/Typ. 35/Typ. k6r4016 K6R4016V1D K6R4016V1D -ui10 K6R4004C1D-JC PDF

    K6R4016V1D-T

    Abstract: K6R4016V1D
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016V1D 256Kx16 110mA 55/Typ. 35/Typ. K6R4016V1D-T K6R4016V1D PDF

    K6R4008V1D

    Abstract: K6R4016V1D-J k6r4008c1d Samsung K6R4008C1D
    Text: PRELIMINARY Preliminary CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF K6R4008V1D K6R4016V1D-J k6r4008c1d Samsung K6R4008C1D PDF

    K6R4016V1D

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016V1D 256Kx16 110mA 130mA 115mA 100mA 35/Typ. 55/Typ. K6R4016V1D PDF

    K6R4016V1D-J

    Abstract: K6R4016C1D
    Text: PRELIMPreliminaryPPPPPPPPPINARY Preliminary K6R4016C1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016C1D 256Kx16 115mA 100mA 35/Typ. 55/Typ. K6R4016V1D-J K6R4016C1D PDF

    K6R4016V1D-T

    Abstract: K6R4016V1D
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016V1D 256Kx16 110mA 130mA 115mA 100mA Read80 002MIN K6R4016V1D-T K6R4016V1D PDF

    K6R4008C1D

    Abstract: K6R4004C1D-JC K6R4016V1D-J Samsung K6R4008C1D 32SOJ
    Text: PRELIMINARY CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary


    Original     		K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF 002MIN K6R4008C1D K6R4004C1D-JC K6R4016V1D-J Samsung K6R4008C1D 32SOJ PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016V1D 256Kx16 110mA 130mA 115mA 100mA 35/Typ. 55/Typ. PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 PDF

    K6R4008V1D

    Abstract: 36-SOJ 44TSOP 36-SOJ-400 44-TSOP2
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF K6R4008V1D 36-SOJ 44TSOP 36-SOJ-400 44-TSOP2 PDF