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    1MX1 SRAM Search Results

    1MX1 SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy

    1MX1 SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    1Mx1 SRAM

    Abstract: No abstract text available
    Text: WMS1M1-XDEX 1Mx1 SRAM MONOLITHIC ADVANCED* FEATURES • Access Times 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available PIN CONFIGURATION TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 ■ Packaging •32 lead, Ceramic SOJ Package 101


    Original     		PDF MIL-STD-883 1Mx1 SRAM

    Memories

    Abstract: UT54ACS244 UT54ACS151 UT54ACS245 UT54ACS365 UT54ACS373 UT54ACS374 UT54ACS541 UT9Q512
    Text: Aeroflex UTMC Application Note UTXQ512-AN-000 _ CONVERTING AEROFLEX UTMC UT9Q512 4M SRAM into an SEU IMMUNE 1M X 1 SRAM This application note describes how to use two UT9Q512 4M SRAMs and one UT54ACS151 logic device


    Original     		PDF UTXQ512-AN-000 UT9Q512 UT54ACS151 UT54ACS151 Memories UT54ACS244 UT54ACS245 UT54ACS365 UT54ACS373 UT54ACS374 UT54ACS541

    27c eeprom

    Abstract: AS27C256 92132 eeprom dip 36 uv 4lc eeprom 4Mx1 sram FPM DRAM MT42C4256 256Kx4 ZIP FLASH MEMORY 29F
    Text: STAND ARD MEMOR Y PRODUCT SELECT OR GUIDE ANDARD EMORY ELECTOR CERAMIC CONFIGURATIONS COMMITTED TO PROVIDING HIGH-QUALITY, INNOVATIVE SOLUTIONS TO THE HIGH-RELIABILITY MARKETPLACE STANDARD MEMORY PRODUCTS CERAMIC CONFIGURATIONS SRAM 16MEG MCM Configurable as


    Original     		PDF 16MEG 64Kx4) 256Kx1) 256Kx4) 512Kx32 1Mx16, 2Mx32 4Mx16, 1Mx32 2Mx16, 27c eeprom AS27C256 92132 eeprom dip 36 uv 4lc eeprom 4Mx1 sram FPM DRAM MT42C4256 256Kx4 ZIP FLASH MEMORY 29F

    65656F

    Abstract: TM1019 DSP 6713 65608E 80C31E 80C32E 80C52E TSC-21020 TSC691E dsp radiation
    Text: Radiation TEMIC Radiation Evaluation Results and Targets Total Dose Device Family Format/ Function/Speed/ Consumption TEMIC Type Total Dose Parametric Latch–Up LET Threshold SEU Cross Section/BIT Functionnal (Krads) (Krads) Iccsb (mA) (MeV/mg/ cm2) (MeV/mg/


    Original     		PDF 80C31E SCC22900 80C32E 80C52E 65162E SCC2215 TM1019 16Kx9 65656F TM1019 DSP 6713 65608E 80C31E 80C32E 80C52E TSC-21020 TSC691E dsp radiation

    28-pin SOJ SRAM

    Abstract: EDI811024CS 28 pin ceramic dip 1MX1 1Mx1 SRAM
    Text: mol EDI811024CS Electronic D««ign* Inci High Speed Megabit Monolithic SRAM 1MX1 Static RAM CMOS, High Speed Monolithic Features The EDI811024CS is an extremely high density, 1024Kx1 bit, high speed Static RAM designed for use in systems where fast computation, low power, and board


    OCR Scan     		PDF EDI811024CS EDI811024CS 1024Kx1 MIL-STD-883, 55nses A0-A19 28-pin SOJ SRAM 28 pin ceramic dip 1MX1 1Mx1 SRAM

    Untitled

    Abstract: No abstract text available
    Text: moi EDI8M11024C Electronic D esign* In c. • High Speed Megabit SRAM Module 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con­ structed using four 256Kx1 Static RAMs in leadless chip


    OCR Scan     		PDF EDI8M11024C EDI8M11024C 1024Kx1 256Kx1 T7////77/////

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    H31M1

    Abstract: EDI8M11024C 901ac
    Text: m o EDI8M11024C i Electronic D »*lgn i Inc. High Speed Megabit SRAM Module railDiOIMmf 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con­ structed using four 256Kx1 Static RAMs in leadlesschip


    OCR Scan     		PDF EDI8M11024C EDI8M11024C 1024Kx1 256Kx1 Z01M1 X0H31 H31M1 H31M1 901ac

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D WË 7 T b 4 m 2 D017bm KM611001 330 • SnGK CMOS SRAM 1MX1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		PDF D017bm KM611001 KM611001P/J-20: 130mA KM611001P/J-25: 110mA KM611001P/J-35: 100mA KM611001P: 28-pin

    H31M1

    Abstract: EDI8M11024C
    Text: EDI8M11024C ^E D I Electronic D »*lgn i Inc. High Speed Megabit SRAM Module railDiOIMmf 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con­ structed using four 256Kx1 Static RAMs in leadlesschip


    OCR Scan     		PDF EDI8M11024C EDI8M11024C 1024Kx1 256Kx1 mod35 Z01M1 XQH31 H31M1

    a810c

    Abstract: EDI811024CS
    Text: EDI811024CS m D \ Electronic D *lg n * I n c * High Speed Megabit Monolithic SRAM 1Mx1 Static RAM CMOS, High Speed Monolithic ] i D[ Features The EDI811024CS is an extremely high density, 1024Kx1 bit, high speed Static RAM designed for use in systems where fast computation, low power, and board


    OCR Scan     		PDF EDI811024CS EDI811024CS 1024Kx1 MIL-STD-883, A17-A19 A6-A16 a810c

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI811024CS Electronic D««igns In « High Speed Megabit Monolithic SRAM O iF M M K O > i 1Mx1 Static RAM CMOS, High Speed Monolithic Features The EDI811024CS is an extremely high density, 1024Kx1 bit CMOS Static 1024Kx1 bit, high speed Static RAM designed for use in Random Access Memory


    OCR Scan     		PDF EDI811024CS EDI811024CS 1024Kx1 A0-A19

    EDI8M11024C

    Abstract: No abstract text available
    Text: ^E D I EDI8M11024C Electro nic D e s i g n i Inc. High Speed Megabit SRAM Module raiUMDMÂIHIY 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con­ structed using four 256Kx1 Static RAMs in leadless chip


    OCR Scan     		PDF EDI8M11024C EDI8M11024C 1024Kx1 256Kx1

    Untitled

    Abstract: No abstract text available
    Text: 1/1/HITE /MICROELECTRONICS 1Mx1 SRAM MONOLITHIC WMS1M1-XDEX ADVANCED* FEATURES PIN CONFIGURATION TO P VIEW NCC 4 A13C 5 A14C 6 A15C 7 NCC 8 A16C 9 A 1 7 C 10 A 1 8 C 11 A 1 9 C 12 N C C 13 Q C 14 W E C 15 G N D C 16 A cce ss Times 20, 25, 35ns • M IL-STD -883 Compliant Devices Available


    OCR Scan     		PDF

    339 Motorola

    Abstract: 128kx8 1MX1 1MX4 motorola 32kx8
    Text: Asynchronous CMOS Fast SRAMs 3.3 Volt Supply MCM6306D 32Kx8 . 3-112 5 Volt Supply MCM6205D MCM6206BA MCM6206D MCM6208C MCM6209C MCM6226A MCM6226B 32Kx9 .3-3 32Kx8 . 3-9


    OCR Scan     		PDF MCM6306D 32Kx8 MCM6226BA MCM6226BB MCM6227A MCM6227B MCM6229A MCM6229B MCM6229BA MCM6246 339 Motorola 128kx8 1MX1 1MX4 motorola 32kx8

    synchronous sram

    Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
    Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK


    OCR Scan     		PDF EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832

    1mx1 DRAM

    Abstract: No abstract text available
    Text: ADVANCED 3 HZ D E L E C T R O N I C PKG a 02547=13 0 0 0 0 3 5 4 2 E3AEP AEPDX1M8LB DYNAMIC RAM MODULE 7~-¥6-e3 '-/$ > > 1,048,576 x 8 Organization > > Low 0.510 in ch stand-off heig ht 0.350 using 90 degree lead pins > > 2 8 p in SIP is shorter in length than standard m odules


    OCR Scan     		PDF

    64kx4 DRAM

    Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
    Text: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit C M O S Static R A M orga­ 32Kx8 bit C M O S Static


    OCR Scan     		PDF EDI8833C/LP/P 32Kx8 EDI8833C/LP/P 144bit 32Kx8. MIL-STD-883, 64Kx4 EDI8466CB. 256Kx1 EDI81256C/LP/P. 64kx4 DRAM SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256

    RAS 0510

    Abstract: dynamic ram module
    Text: AEPDX1M8LB DYNAMIC RAM MODULE > > 1,048,576 x 8 Organization > > Low 0.510 inch stand-off height 0.350 using 90 degree lead pins > > 2 8 pin SIP is shorter in length than standard modules > > Single +5V power supply > > TTL compatible 1 MEGAWORD BY 8 BIT LOW


    OCR Scan     		PDF

    SOJ 44

    Abstract: 1MX1 KM6865
    Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001


    OCR Scan     		PDF KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL SOJ 44 1MX1 KM6865

    HM6206

    Abstract: 32Kx64
    Text: SRAMs Cache Synchronous SRAMs P ackage P a rt N um b e r D e n i lt y O r g a n iz a tio n C y c le tim e / A c c e « » tim e (n e ) Max. Key F e a tu re LQ FP HM62C3232 1M 32K x32 9/10/12/15 Pipeline 100 HM62C3232FP-7 1M 32K x32 7 Pipeline 100 HM62C3232FP-8L


    OCR Scan     		PDF HM62C3232 HM62C3232FP-7 HM62C3232FP-8L HM62D3232 HM62D3232FP-7 HM67B3632 HM67S3632 HB66C3264BA HB66D3264BA HB66C6464BA HM6206 32Kx64

    9660t

    Abstract: LH521008
    Text: SHARP b OE CORP D • Ô1ÔD7TÔ DDDTME? 302 «SRPJ 'T - H C - 2 3 - / O LH101504 LH101510 . R E L I M I N A Ü 3 H 1 3 C5 WF A,s Au Ai 3 R Y High-Speed BiCMOS 1M 1M xi ECL Static RAM ■ Description ■ The LH101504/LH101510 is a 256K/1M-bit high speed


    OCR Scan     		PDF LH101504 LH101510 LH101504/LH101510 256K/1M-bit 742S6 9660t LH521008