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    1N484B Search Results

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    1N484B Price and Stock

    Microchip Technology Inc 1N484B

    DIODE GEN PURP 125V 200MA DO35
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    1N484B Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N484B Microsemi General purpose diode Original PDF
    1N484B Taitron Components Rectifier Diode, Single, 150V, SOD-27|SOD-68, 2-Pin Original PDF
    1N484B Crimson Semiconductor Silicon Diodes, DO-7 or DO-35 Scan PDF
    1N484B Fairchild Semiconductor General purpose low leakage diode. Working inverse voltage 130V. Scan PDF
    1N484B General Diode Silicon Diode Selection Guide Scan PDF
    1N484B Micronas Semiconductor General Purpose and Switching Diodes in a DO-35 Package Scan PDF
    1N484B Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N484B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N484B Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N484B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N484B Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N484B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N484B National Semiconductor Low Leakage Diodes Scan PDF
    1N484B National Semiconductor Low Leakage Diodes, Glass Package Scan PDF
    1N484B Semitronics Silicon Diodes Scan PDF
    1N484B Thomson-CSF Condensed Data Book 1977 Scan PDF
    1N484B Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    1N484B.TR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    1N484B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N484B General purpose low leakage diode. Working inverse voltage 130V. 2.57 Diodes. Page 1 of 1 Enter Your Part # Home Part Number: 1N484B Online Store 1N484B Diodes General purpose low leakage diode. Working inverse Transistors voltage 130V. Integrated Circuits


    Original
    PDF 1N484B 1N484B com/1n484b

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N482B 1N486B LOW LEAKAGE RECTIFIER MAXIMUM RATINGS Symbol Value Unit Average forward rectified current @ TA = 25°C Rating IAV 0.65 A Maximum non-repetitive surge 8.3ms ½ sine IFSM 2.0 A Junction temperature range TJ -65 to +200


    Original
    PDF 1N482B 1N486B 1N483B 1N484B 1N485B DO-35 MIL-PRF-19500,

    FD700 "cross-reference"

    Abstract: ba479 datasheets diode 1n4009 1N4146 1N458 "cross reference" BAS34 1N459 equivalent 1N3064 1N4009 1N4152
    Text: Switching Diodes Part No. CrossReference Operating Temperature: -65oC to 150o C Power Dissipation Max. Avg. Rect. Current Peak Voltage Continuous Rev. Current Forward Voltage Max. Reverse Recovery Time Package Bulk/Reel P d mW Io(mA) V R R M(V) IR(nA)@V R (v)


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    PDF -65oC 1N3600 1N3064 1N4009 1N4146 1N914A 1N914 1N4152 1N4153 BAS34 FD700 "cross-reference" ba479 datasheets diode 1n4009 1N4146 1N458 "cross reference" BAS34 1N459 equivalent 1N3064 1N4009 1N4152

    Untitled

    Abstract: No abstract text available
    Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s


    Original
    PDF 1N484B DO-35

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    FDS01503

    Abstract: FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent
    Text: This Material National Semiconductor Surface Mount Diodes <S> m 2 t-i General Purpose & Specialty Diodes O Device Description Pkg. No. Pin Out Bv V Min •r (nA) @ Max Vr V Vf <V> Max If mA mA C PF Max to­ ns Max Test Cond. FDS01000 FAMILY Proc. Family


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    PDF D113D T-03-01 FDS01200 FDS01400 FDS01500 FDS01700 1N914 1N4149 FDH600 1N625 FDS01503 FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent

    FDS01201

    Abstract: FDS04148 FDS01203 FSD01200 FDS01503 FDS01501 1N459 equivalent FDS01202 1N627 FDS01703
    Text: £ 3 National Semiconductor Surface Mount Diodes S> m 3: n O O General Purpose & Specialty Diodes PLASTIC PACKAGE Description Pkg. No. Pin Out By (V Min - I I Device Vr V Vp (V> Max 1000 75 0.715 1.0 0.855 10.0 1.1 50.0 1.3 100.0 1.0 100 See BAS 16 See BAS 16


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    PDF FDS01000 O-236 BAV70 BAV74 BAV99 BAW56 FDS01201 FDS04148 FDS01203 FSD01200 FDS01503 FDS01501 1N459 equivalent FDS01202 1N627 FDS01703

    bav20 itt

    Abstract: BAV21 ITT WG713 1n4148 ITT 1N914 ITT BA201 BAV17 BAV18 BAV19 BAV20
    Text: SILICON DIODES I T T Û7 SEMICONDUCTORS dË T | 4kf lHTSS 0a0S3Ht, 4 | ' G eneral Purpose and Sw itching Diodes in DO -35 Package Type Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera­at25°C ture Tf Forward Voltage


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    PDF DO-35 BA170 BA201 BAV17 BAV18 BAV19 1N4449* 1N4450* 1N4451* 1N4453* bav20 itt BAV21 ITT WG713 1n4148 ITT 1N914 ITT BAV20

    WG713

    Abstract: 1n4148 ITT ITT3002 1N914 ITT BA170 BA201 BAV17 BAV18 BAV19 BAV20
    Text: SILICON DIODES I T T Û7 SEMICONDU CTORS dË T | 4^04^55 000232b 4 | ' General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver, Power Junction Rectified Dissipation Tempera­ Current l0 at25°C ture Tj Forward Voltage Drop Vf


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    PDF 000232b DO-35 Tempera-at25Â BA170 BA201 BAV17 BAV18 100fitoJB BAV19 1N4449* WG713 1n4148 ITT ITT3002 1N914 ITT BAV20

    EM 5135 diode

    Abstract: 458a diode IN461A 1N459 equivalent T219 pn5139 pn5135 FDSOI500 equivalent diode for 1n457 0/EM 5135 diode
    Text: FAIRCHILD SEMICO NDU CTO R 04 DE |34fc.citi74 0 0 H 7 4 S CI 4 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 74 59 D PN5135/FTS05135 T - 2 7 - u PN5136/FTS05136 PN5137/FTS05137 FAIRCHILD A S c h lu m b e rg e r C o m p a n y NPN Small Signal General Purpose Amplifiers


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    PDF iti74 PN5135/FTS05135 PN5136/FTS05136 PN5137/FTS05137 PN5135 PN5136 PN5137 FTS05135 FTS05136 FTS05137 EM 5135 diode 458a diode IN461A 1N459 equivalent T219 pn5139 FDSOI500 equivalent diode for 1n457 0/EM 5135 diode

    equivalent diode for 1n457

    Abstract: IN461A IN484B 1N4848 458a diode in462a PN5142 in485b PN5139 PN5135
    Text: FAIRCHILD SEMICO NDU CTO R 3469674 04 F A IR C H IL D DE |34fc.citi74 0 0 H 7 4 S CI 4 SEM ICO NDU CTOR 84D 27459 D PN5135/FTS05135 T - 2 7 - u PN5136/FTS05136 PN5137/FTS05137 FAIRCHILD A S c h lu m b e rg e r C o m p a n y NPN Small Signal General Purpose


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    PDF PN5135/FTS05135 PN5136/FTS05136 PN5137/FTS05137 625mW PN/FTS05135) PN/FTS05136/7) PN5142, PN5143 PN5135 equivalent diode for 1n457 IN461A IN484B 1N4848 458a diode in462a PN5142 in485b PN5139 PN5135

    WIMA TFM

    Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
    Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN


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    PDF RG121JU WIMA TFM Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    CECC 50001

    Abstract: BAV21 CECC WG713 1N45BA 1N483A Diode BA170 BA201 BAV17 BAV18 BAV19
    Text: General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Junction Forward Max. Aver, Power Rectified Dissipation Tempera­• Voltage ture Tf Current l0 at25°C Drop Vf Reverse Current lR at lF Reverse RecoveryTime atv„ Volts mA max.mW max.°C


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    PDF DO-35 Tempera-at25Â BA170 BA201 BAV17 BAV18 100fitoJB BAV19 100Qto BAV20 CECC 50001 BAV21 CECC WG713 1N45BA 1N483A Diode

    FD333

    Abstract: JAN1N486B FJT1100
    Text: DIODES LOW LEAKAGE DIODES BY DESCENDING BV GLASS PACKAGE By c Vr VOLTS VF @ VOLTS MAX @ 50 @ @ If mA 225 1.1 @ 100 DO-7 250 25 @ 225 1.0 @ 100 DO-7 1N486B 250 50 @ 225 1.0 @ 100 DO-7 1N486B JAN 250 25 @ 225 1.0 100 DO-7 1N486B JAN TX 250 25 @ 225 1.0 @ @


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    PDF 1N486 1N486A 1N486B 1N459 1N459A 1N485A 1N485B FD333 JAN1N486B FJT1100

    1N930

    Abstract: 1N400 1n462 1N4611 N461A
    Text: S ILIC O N DIODES Type Case M in. Forw ard P.I.V . Current V o lts at 1V mA Reverie Currant at 2 5*t Re­ verse V o ltage pA M axim u m Reverse Current at Tem p. a*a t Cap. Recov. Tim e -Trr Power D issi­ pa­ tion pF nS mW 1N456 D 035 30 40 .025 25 5 150


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    PDF 1N456 1N457 1N458 1N461 1N462 1N464 1N482 1N482B 1N483B 1N484 1N930 1N400 1N4611 N461A

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    23J2

    Abstract: BAW32D BAY18 1N484 1n484a 1N456 1N457 1N461 1N462 1N483
    Text: silicon signal diodes diodes de signal au silicium Type vF / v r -v r m >o m ax V max (m A) general purpose m ax (V) THOMSON-CSF iF |r (mA) m ax (nA) / C Styp m ax (pF) Vr (V) Casa usage général Tam b = 25°C 1N456 1N 456 A 1N457 1N 457 A 1N461 25 25- 30


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    PDF 1N456 1N457 1N461 1N462 1N483 1N484 CB-26) 23J2 BAW32D BAY18 1n484a