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Nextgen Components RF01N100J500LE Cap. SMD,0201,NP0,10pF,5%,50V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF01N100J500LE	Reel	6,000,000		15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nextgen Components 0201N100J500LE CAP CER 10PF 50V NP0 0201
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0201N100J500LE	Reel	210,000		60,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Walsin Technology Corporation 0201N100J250CT CAP CER 10PF 25V C0G/NP0 0201
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0201N100J250CT	Reel	105,000		15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	0201N100J250CT		42,900		100	1 - 10 - 100 $0.01083 1000 $0.00349 10000 $0.00189	Buy Now
Avnet Asia	0201N100J250CT			10 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Walsin Technology Corporation 0201N100J500CT CAP CER 10PF 50V C0G/NP0 0201
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0201N100J500CT	Reel	75,000		15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	0201N100J500CT	Cut Tape	14,414		1	1 $0.1 10 $0.02 100 $0.009 1000 $0.00531 10000 $0.00444	Buy Now
Newark	0201N100J500CT	Reel	60,000		15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	0201N100J500CT	Cut Tape	13,660		10	1 - 10 $0.015 100 $0.008 1000 $0.008 10000 $0.008	Buy Now
TME	0201N100J500CT				15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Ameya Holding Limited	0201N100J500CT		75,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	0201N100J500CT	Cut Tape	15,000			1 - 10 - 100 - 1000 $0.00509 10000 $0.00248	Buy Now
Littelfuse Inc IXTY01N100 MOSFET N-CH 1000V 100MA TO252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTY01N100	Tube	20,300		1	1 $1.93 10 $1.93 100 $1.55329 1000 $1.15388 10000 $1.15388	Buy Now
Chip1Stop	IXTY01N100		6			1 $1.11 10 $1.11 100 $1.11 1000 $1.11 10000 $1.11	Buy Now

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1N100 Datasheets (66)

Part	Manufacturer	Description	Type	PDF
1N100	Microsemi	Optimized For Radio Frequency Response	Original	PDF
1N100	BKC International	100 V, 500 mA, gold bonded germanium diode	Scan	PDF
1N100	BKC International	Gold Bonded Germanium Diode	Scan	PDF
1N100	General Instrument	Semiconductors and Electronic Components 1971	Scan	PDF
1N100	International Semiconductor	DIODE FAST RECOVERY RECTIFIER 80V A 2DO-7 REEL	Scan	PDF
1N100	International Semiconductor	GENERAL PUROSE DIODE	Scan	PDF
1N100	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
1N100	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
1N100	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N100	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1N100	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF
1N100	Semitronics	Germanium Diodes / Germanium Rectifiers	Scan	PDF
1N1003	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF
1N1005	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF

1N1005	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1N1007	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
1N1007	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1N1008	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
1N1008	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1N100A	Micro Commercial Components	DIODE STANDARD RECOVERY RECTIFIER 100V 0.07A 2DO-7	Original	PDF

1N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1N100 Abstract: No abstract text available Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM	Original	PDF	1N100 O-263 O-220AB 1N100
1N100 Abstract: No abstract text available Text: Advanced Technical Information High Voltage MOSFET IXTA 1N100 IXTP 1N100 VDSS ID25 RDS on = 1000 V = 1.5 A = 11 Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	1N100 O-263 O-220AB O-220 1N100
"Germanium Diode" Abstract: No abstract text available Text: MCC TM Micro Commercial Components Features • • • 1N100A omponents 20736 Marilla Street Chatsworth !"# $ % !"# 100 Volt Germanium Diode Low Leakage Current Flat Junction Capacitance High Mechanical Strength	Original	PDF	1N100A 400mA 250mA "Germanium Diode"
Untitled Abstract: No abstract text available Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 1N100P IXTP 1N100P VDSS ID25 RDS on = 1000 V = 1.2 A = 13 Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	1N100P 1N100P O-263 O-220 405B2
"Germanium Diode" Abstract: No abstract text available Text: MCC Features • • • 1N100A omponents 20736 Marilla Street Chatsworth !"# $ % !"# 100 Volt Germanium Diode Low Leakage Current Flat Junction Capacitance High Mechanical Strength Maximum Ratings	Original	PDF	1N100A 400mA 250mA "Germanium Diode"
Untitled Abstract: No abstract text available Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM	Original	PDF	1N100 O-263 O-220AB
1N100 Abstract: No abstract text available Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 VDSS ID25 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	1N100 O-263 O-220AB 728B1 1N100
1N100 Abstract: No abstract text available Text: Advance Technical Information High Voltage MOSFET IXTH 1N100 IXTT 1N100 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 1.5 A IDM TC = 25°C, pulse width limited by TJM	Original	PDF	1N100 O-268 O-247 728B1 1N100
1N100 Abstract: selenium diode germanium Text: 1N100 Germanium Diode 0.90 Diodes Germanium and Selenium Diodes Germanium Di. Page 1 of 1 Enter Your Part # Home Part Number: 1N100 Online Store 1N100 Diodes Germanium Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics	Original	PDF	1N100 1N100 com/1n100 selenium diode germanium
Untitled Abstract: No abstract text available Text: Advanced Technical Information High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 10 W RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000	Original	PDF	1N100 1N100 O-220AB O-263
1N91 DATASHEET Abstract: DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60 Text: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7	Original	PDF	1N34A 1N67A 1N87A 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N91 DATASHEET DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60
Untitled Abstract: No abstract text available Text: Gold Bonded 1N100A Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications DO-7 Glass Package AM/FM detectors Ratio detectors FM discriminators 0.018-0.022" 0.458-.558 mm	Original	PDF	1N100A
Untitled Abstract: No abstract text available Text: Advance Technical Information High Voltage MOSFET IXTH 1N100 IXTT 1N100 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 1.5 A IDM TC = 25°C, pulse width limited by TJM	Original	PDF	1N100 O-268 O-247 728B1
gold detectors circuit Abstract: 1N100A diodes 1N100A Text: Gold Bonded 1N100A Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications DO-7 Glass Package AM/FM detectors Ratio detectors FM discriminators 0.018-0.022" 0.458-.558 mm	Original	PDF	1N100A gold detectors circuit 1N100A diodes 1N100A

Untitled Abstract: No abstract text available Text: Advanced Technical Information High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 W RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V	Original	PDF	1N100 O-263 O-220AB
dual diode TO254AA 600V Abstract: No abstract text available Text: OM 1N100SA OM 5N100SA 1N100ST QM 3N100SA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V. Up To 6 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • • Isolated Hermetic Metal Package	OCR Scan	PDF	1N100SA 5N100SA OM1N100ST 3N100SA MIL-19500, 10secs. O-257AA O-254AA 205Crawtord dual diode TO254AA 600V
Untitled Abstract: No abstract text available Text: 1989963 C E N T R A L S E M I C O N D U C T O R _ 92D 00408 f \ DESCRIPTION The CENTRAL SEMICONDUCTOR 1N100A, 1N270, 1N277, 1N281, 1N283 types are Gold Bonded Germanium Diodes mounted in a hermetically sealed glass case, designed for general purpose applications.	OCR Scan	PDF	1N100A, 1N270, 1N277, 1N281, 1N283 1N270 1N277 1N281 1N283 1N100A
Germanium diode Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes	OCR Scan	PDF	1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
1N34A do-35 Abstract: 1N34A reverse recovery OA47 AA118 AA143 oa90 AA143 OA90 AA218 1N60 LL 34 1N3467 Text: B IC C I N T E R N A T I O N A L 30E D • H7nfl3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270	OCR Scan	PDF	00003Q0 T-01-0 AA117 AA118 AA121 AA143 AA144 AAY30 AAY32 AAY33 1N34A do-35 1N34A reverse recovery OA47 AA143 oa90 OA90 AA218 1N60 LL 34 1N3467
1n270 Abstract: diode germanium 1n270 diodes 1n270 diodes 1N100A 1N283 1N100A 1N277 1N281 Text: 1989963 CENTRAL SEMICONDUCTOR 92D 00406 r \ DESCRIPTION The CENTRAL S E M I C O N D U C T O R 1N100A, 1N270, 1N277, 1N281, 1N283 types are Gold Bonded Germanium Diodes m ounted in a h e r m e t i c a l l y sealed glass case, designed for general purpose applications,	OCR Scan	PDF	1N100A, 1N270, 1N277, 1N281, 1N283 1N100A 1N270 1N277 1N281 10mW/10Â diode germanium 1n270 diodes 1n270 diodes 1N100A 1N281
OA47 germanium Abstract: AA118 AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87 AA117 Text: B IC C INTERNATI ONAL 30E D • H 7 n f l 3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270 1N276	OCR Scan	PDF	AA117 AA118 AA121 AA130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 OA47 germanium AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87
1N100 Abstract: germanium diode Scans-0014269 "Germanium Diode" Text: Q3E D I 1 1 7 ^ 0 3 B K C IN TE RNA TIONAL □□□□111 S Type No. 1N100 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption	OCR Scan	PDF	1N100 MIL-S-19500, 1N100 germanium diode Scans-0014269 "Germanium Diode"
Untitled Abstract: No abstract text available Text: B K C INTERNATIONAL 3QE D • HTTTflB G00G32fci 4 ■ ' “T - O i - O “] BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO* 508 681-0392 ENGINEERING DATA SHEET TYPE 1N100A GOLD BONDED, GERMANIUM, DIODE ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	G00G32fci 1N100A 250mA 400mA 10mW/10 --50uA
TP1N100 Abstract: TP1N95 MTP1N100 MS 1117 ADC Text: MOTOROLA SC IM E XST RS/R F D I b 3 fc>7254 0 0 0 ^ 5 0 r MOTOROLA ^ f 2 I - n •I SEMICONDUCTOR TECHNICAL DATA M TM 1N95 M TM 1N100 MTP1N95 MTP1N 100 Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS	OCR Scan	PDF	Y145M. O-204AA T01SA TP1N100 TP1N95 MTP1N100 MS 1117 ADC

1N100 Search Results

1N100 Price and Stock

Nextgen Components RF01N100J500LE

Nextgen Components 0201N100J500LE

Walsin Technology Corporation 0201N100J250CT

Walsin Technology Corporation 0201N100J500CT

Littelfuse Inc IXTY01N100

1N100 Datasheets (66)

1N100 Datasheets Context Search

1N100

1N100

"Germanium Diode"

Untitled

"Germanium Diode"

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1N100

1N100

1N100

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1N91 DATASHEET

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gold detectors circuit

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dual diode TO254AA 600V

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Germanium diode

1N34A do-35

1n270

OA47 germanium

1N100

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TP1N100