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    CE1H Price and Stock

    CTS Corporation 12CE1H24B12224

    ROT ENCODER MECH 12PPR BLUE LED
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    DigiKey 12CE1H24B12224 Tray 93 1
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    Avnet Americas 12CE1H24B12224 Tray 16 Weeks 1,000
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    CTS Corporation 12CE1H25F12224

    ROT ENCODER MECH 12PPR BLUE LED
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    DigiKey 12CE1H25F12224 Tray 39 1
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    Avnet Americas 12CE1H25F12224 Tray 16 Weeks 1,000
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    Mouser Electronics 12CE1H25F12224
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    Infineon Technologies AG ICE1HS01GHUMA1

    IC OFFLINE SW HALF-BRIDGE 8DSO
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    Infineon Technologies AG ICE1HS01G1XUMA1

    IC OFFLINE SW HALF-BRIDGE 8DSO
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    DigiKey ICE1HS01G1XUMA1 Digi-Reel 1
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    ICE1HS01G1XUMA1 Reel 2,500
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    ICE1HS01G1XUMA1 Cut Tape 1
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    Avnet Americas ICE1HS01G1XUMA1 Ammo Pack 16 Weeks, 3 Days 1
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    ICE1HS01G1XUMA1 Reel 13 Weeks 2,500
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    Mouser Electronics ICE1HS01G1XUMA1 13,512
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    Newark ICE1HS01G1XUMA1 Cut Tape 30 1
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    Chip One Stop ICE1HS01G1XUMA1 Cut Tape 1,812
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    EBV Elektronik ICE1HS01G1XUMA1 14 Weeks 2,500
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    Swissbit SDN03264C1CE1HY-60WR

    MODULE DDR SDRAM 256MB 200SODIMM
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    DigiKey SDN03264C1CE1HY-60WR Tray
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    CE1H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL PRELIMINARY 16-Mb 1M x 16 Static RAM Features input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Deselected (CE1HIGH or CE2 LOW) • Wide voltage range: 1.65V – 2.25V • Outputs are disabled (OE HIGH)


    Original     		CY62167EV18 16-Mb 48-ball PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY62157CV18 MoBL2 512K x 16 Static RAM ed CE1 HIGH or CE2 LOW . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1HIGH or CE2 LOW), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE LOW).


    Original     		CY62157CV18 CY62157V CY62157CV18: I/O15) CY62157CV18MoBL CY62157BV18 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62157CV18 MoBL2 512K x 16 Static RAM Features deselected CE1HIGH or CE2 LOW , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE LOW). • Low voltage range: — CY62157CV18: 1.65V–1.95V


    Original     		CY62157CV18 CY62157CV18: CY62157CV18MoBL2 CY62157BV18 PDF

    DG201ACJ

    Abstract: DG201A DG201AAK DG201ABK DG201ACY DG202 DG202AK DG202CJ DG441 GDIP1-T16
    Text: DG201A, DG202 T UC T R OD R OD U C P E P , T E E P DI OL UT OBS UBSTIT DG441 P42 S 4 , ) E , DG Sheet R DIP C)Data SIBL POS 0201(CE1HS(SOI HI1- I9P020 H itle G20 , 202 bt uad ST, OS a- May 2001 File Number 3117.3 Quad SPST, CMOS Analog Switches Features


    Original     		DG201A, DG202 DG441 I9P0201 DG201A DG202 DG201ACJ DG201AAK DG201ABK DG201ACY DG202AK DG202CJ GDIP1-T16 PDF

    CY62167DV30LL-55BVI

    Abstract: No abstract text available
    Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1HIGH or CE2


    Original     		CY62167DV30 16-Mbit 48-ball 48-pin I/O15) CY62167DV30LL-55BVI PDF

    BLM21B102SPT

    Abstract: rd22 zener diode 56kbps modem optocoupler HA11 lu27xx rd23 8-SOP-150 RMC-EA16LMY-OM00-A 80C200 80C300
    Text: APPLICATION NOTE 8.2 SMSC LAN91C100 and LAN91C110 FEAST Competitive Comparison in Embedded and PC Card Applications By Paul Brant OVERVIEW. 1


    Original     		LAN91C100 LAN91C110 56Kbps BLM21B102SPT rd22 zener diode 56kbps modem optocoupler HA11 lu27xx rd23 8-SOP-150 RMC-EA16LMY-OM00-A 80C200 80C300 PDF

    CY62187EV30

    Abstract: No abstract text available
    Text: CY62187EV30 MoBL 64-Mbit 4 M x 16 Static RAM 64-Mbit (4 M × 16) Static RAM Features Functional Description • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V to 3.7 V ■ Ultra low standby power ❐ Typical standby current: 8 A ❐ Maximum standby current: 48 μA


    Original     		CY62187EV30 64-Mbit 16-bits. I/O15) PDF

    BLM21B102SPT

    Abstract: rd22 zener diode optocoupler HA11 RA13 honda c92 6R19 ZENER A16 80C200 80C300 LAN91C100
    Text: APPLICATION NOTE 8.2 SMSC LAN91C100 and LAN91C110 FEAST Competitive Comparison in Embedded and PC Card Applications By Paul Brant OVERVIEW. 1


    Original     		LAN91C100 LAN91C110 56Kbps BLM21B102SPT rd22 zener diode optocoupler HA11 RA13 honda c92 6R19 ZENER A16 80C200 80C300 PDF

    CY62157EV30LL-45BVXI

    Abstract: TSOP 48 thermal resistance
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		CY62157EV30 I/O15) CY62157EV30LL-45BVXI TSOP 48 thermal resistance PDF

    CY62177EV30

    Abstract: CY62177EV30LL-55ZXI
    Text: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M x 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns


    Original     		CY62177EV30 32-Mbit I/O15) CY62177EV30LL-55ZXI PDF

    55BV

    Abstract: AN1064 CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL
    Text: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is


    Original     		CY62167EV18 16-Mbit 55BV AN1064 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL PDF

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		CY62157DV30 I/O15) 45-ns 70-ns CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L CY62157DV30LL PDF

    CY62167DV30L-55ZI

    Abstract: CY62167DV30
    Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed


    Original     		CY62167DV30 16-Mbit I/O15) CY62167DV30 48-lead BV48A BV48B CY62167DV30L-55ZI PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62187EV30 MoBL 64-Mbit 4 M x 16 Static RAM 64-Mbit (4 M × 16) Static RAM ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power


    Original     		CY62187EV30 64-Mbit I/O15) PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1


    Original     		CY62157EV30 CY62157DV30 48-ball 44-pin 48-pin PDF

    CY62157CV18

    Abstract: CY62157DV20
    Text: PRELIMINARY CY62157DV20 MoBL2 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed


    Original     		CY62157DV20 I/O15) 55-ns 70-ns CY62157CV18 CY62157CV18 PDF

    CY62177DV20

    Abstract: AN1064 CY62177DV20LL-70BAI
    Text: CY62177DV20 MoBL2 32-Mbit 2M x 16 Static RAM Features by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when:


    Original     		CY62177DV20 32-Mbit AN1064 CY62177DV20LL-70BAI PDF

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original     		CY62157DV30 I/O15) CY62157CV25, CY62157CV30, CY62157C. CY62157DV CY62157DV30 CY62157CV25 CY62157CV30 CY62157CV33 cy62157dv30l-55zxi PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62177ESL MoBL 32-Mbit 2 M x 16/4 M × 8 Static RAM 32-Mbit (2 M × 16/4 M × 8) Static RAM Features Functional Description • Thin small outline package-I (TSOP-I) configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ High-speed up to 55 ns


    Original     		CY62177ESL 32-Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns


    Original     		CY62177EV30 32-Mbit PDF

    8051 code assembler for data encryption standard

    Abstract: t3th HM628128 8051 coding for data encryption standard DS5000 DS5001FP DS5002FP DS5002FP-12 DS5002FP-16 DS5002FPM-12
    Text: DS5002FP ti4 E D 2hmi3D DALLAS □D D7 S1 S SEMICONDUCTOR DALLAS SEMICONDUCTOR PIN ASSIGNMENT • 8051 compatible uC for secure/sensitive applications 8 8 B ^ Ù5.,_ S ° Access 32, 64, or 128K bytes of nonvolatile SRAM for program and/or data storage - In-system programming via on-chip serial port


    OCR Scan     		ds5002fp 64-bit DS5002FP 8051 code assembler for data encryption standard t3th HM628128 8051 coding for data encryption standard DS5000 DS5001FP DS5002FP-12 DS5002FP-16 DS5002FPM-12 PDF

    ba1s

    Abstract: QS500 BD7 274 FP 801 CRC-16 DS5001FP DS5002FP dallas nvram cmos
    Text: Bi b4E » DALLAS 2bl4130 0 0 0 7 ^ 2 SEMI CONDUCT OR S3b « D A L DS5001FP CORP DALLAS SEMICONDUCTOR DS5001FP 128K Soft Micro Chip FEATURES PIN ASSIGNM ENT • 8051 compatible uC adapts to its task - Accesses up to 128K bytes of nonvolatile S RAM In-system programming via on-chip serial port


    OCR Scan     		2bl4130 DS5001FP CRC-16 DS5001FP ba1s QS500 BD7 274 FP 801 DS5002FP dallas nvram cmos PDF

    MSM44256

    Abstract: M5M442 M5M44256 MH51208PNA-10 MH51208PNA-12
    Text: u i M IT S U B IS H I LSIs M HS1208P N A-10,-12 4 1 9 4 3 Q 4 -B IT 5 2 4 2 8 8 -W O R P B Y 8-B IT P S E U P O -P S E U D O STATIC RAM MODULE DESCRIPTIO N The M H 51208PN A is 5 2 4 2 8 8 word x 8-bit PSEUDO- PIN C O N F IG U R A T IO N (TOP V IE W ) PSEU D O static R A M and consist o f four industry standard


    OCR Scan     		MH51208PNA-10 4194304-BITC524288-WQRP MH51208PNA 136ns 750mW MH51208PNA-12 156ns 650mW MSM44256 M5M442 M5M44256 PDF

    104 k5k capacitor

    Abstract: motorola HEP 801 motorola HEP cross reference sony KHS - 313 Micropower Buffered Variable Voltage DS2251-64-12 motorola HEP 320 cross reference 80c154 intel k5k 104 capacitor 104 capacitor k5k
    Text: TABLE OF CONTENTS SOFT MICROCONTROLLER USER’S GUIDE Section 1 Introduction . 1 Section 2 Selection G u id e . 4


    OCR Scan     		PDF